公开(公告)号：US10580780B2

公开(公告)日：2020-03-03

申请号：US16005422

申请日：2018-06-11

Applicant: United Microelectronics Corp.

Inventor： Zi-Jun Liu ,  Ping-Chia Shih ,  Chi-Cheng Huang ,  Kuo-Lung Li ,  Hung-Wei Lin ,  An-Hsiu Cheng ,  Chih-Hao Pan ,  Cheng-Hua Chou ,  Chih-Hung Wang

IPC: H01L23/62 ,  H01L27/112 ,  H01L27/11521 ,  H01L27/1156 ,  H01L21/762 ,  H01L21/3115 ,  H01L21/311 ,  H01L21/28

Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.

公开(公告)号：US20190378846A1

公开(公告)日：2019-12-12

申请号：US16005422

申请日：2018-06-11

Applicant: United Microelectronics Corp.

Inventor： Zi-Jun Liu ,  Ping-Chia Shih ,  Chi-Cheng Huang ,  Kuo-Lung Li ,  Hung-Wei Lin ,  An-Hsiu Cheng ,  Chih-Hao Pan ,  Cheng-Hua Chou ,  Chih-Hung Wang

IPC: H01L27/112 ,  H01L27/11521 ,  H01L27/1156 ,  H01L21/762

Abstract: Provided is a semiconductor structure including a substrate, an isolation structure, a fuse and two gate electrodes. The isolation structure is located in the substrate and defines active regions of the substrate. The fuse is disposed on the isolation structure. The gate electrodes are disposed on the active regions and connected to ends of the fuse. In an embodiment, a portion of a bottom surface of the fuse is lower than top surfaces of the active regions of the substrate.