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公开(公告)号：US20150214060A1
公开(公告)日：2015-07-30
申请号：US14680078
申请日：2015-04-07
Applicant: United Microelectronics Corp.
Inventor： Jian-Cun Ke , Chih-Wei Yang , Kun-Yuan Lo , Chia-Fu Hsu , Shao-Wei Wang
CPC classification number: H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/823828 , H01L21/823857 , H01L29/165 , H01L29/4966 , H01L29/518 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7834
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在衬底上形成界面层; 在界面层上形成高k电介质层; 在高k电介质层上形成第一底部阻挡金属（BBM）层; 进行热处理; 去除第一个BBM层; 以及在所述高k电介质层上形成第二BBM层。
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公开(公告)号：US20150069534A1
公开(公告)日：2015-03-12
申请号：US14023475
申请日：2013-09-11
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Jian-Cun Ke , Chih-Wei Yang , Kun-Yuan Lo , Chia-Fu Hsu , Shao-Wei Wang
CPC classification number: H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/823828 , H01L21/823857 , H01L29/165 , H01L29/4966 , H01L29/518 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7834
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在衬底上形成界面层; 在界面层上形成高k电介质层; 在高k电介质层上形成第一底部阻挡金属（BBM）层; 进行热处理; 去除第一个BBM层; 以及在所述高k电介质层上形成第二BBM层。
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3.发明授权High-K metal gate process for lowering junction leakage and interface traps in NMOS transistor 有权用于降低NMOS晶体管中的结漏电和接口陷阱的高K金属栅极工艺公开(公告)号：US09406516B2
公开(公告)日：2016-08-02
申请号：US14680078
申请日：2015-04-07
Applicant: UNITED MICROELECTRONICS CORP.
Inventor： Jian-Cun Ke , Chih-Wei Yang , Kun-Yuan Lo , Chia-Fu Hsu , Shao-Wei Wang
IPC: H01L21/02 , H01L21/28 , H01L29/49 , H01L29/51 , H01L29/78 , H01L21/8238 , H01L29/66 , H01L29/165
CPC classification number: H01L21/28088 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/823828 , H01L21/823857 , H01L29/165 , H01L29/4966 , H01L29/518 , H01L29/665 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , H01L29/7834
Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.
Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在衬底上形成界面层; 在界面层上形成高k电介质层; 在高k电介质层上形成第一底部阻挡金属（BBM）层; 进行热处理; 去除第一个BBM层; 以及在所述高k电介质层上形成第二BBM层。
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