公开(公告)号：US20230352576A1

公开(公告)日：2023-11-02

申请号：US17876572

申请日：2022-07-29

Applicant: University of Electronic Science and Technology of China ,  Institute of Electronic and Information Engineering of UESTC in Guangdong

Inventor： Ming QIAO ,  Ruidi WANG ,  Yibing WANG ,  Bo ZHANG

IPC: H01L29/40 ,  H01L29/06 ,  H01L29/78

CPC classification number: H01L29/7811 ,  H01L29/0634 ,  H01L29/405

Abstract: A termination structure of a super-junction power device has a novel polysilicon resistive field plate at the top of a termination region between a transition region and an edge of the device. By utilizing the regular distribution of potential in the field plate, an additional electric field is introduced at the top of the termination structure to limit the expansion of a non-depletion region and optimize the distribution of charges. The termination structure includes a first doping type epitaxial layer, a second doping type compensation region, a second doping type body region, a second doping type lateral connection layer, a second doping type body contact region, a first doping type source contact region, a gate oxide layer, a passivation layer, a field oxide layer, a gate electrode, a second doping type edge contact region, a polysilicon resistive field plate, a metal layer and the like.

公开(公告)号：US20230129440A1

公开(公告)日：2023-04-27

申请号：US17831454

申请日：2022-06-03

Applicant: University of Electronic Science and Technology of China ,  Institute of Electronic and Information Engineering of UESTC in Guangdong

Inventor： Ming QIAO ,  Ruidi WANG ,  Yibing WANG ,  Wenyang BAI ,  Bo ZHANG

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L21/265 ,  H01L21/266 ,  H01L21/761 ,  H01L29/66

Abstract: A method for manufacturing a semiconductor device is provided. A drift region and a compensation region are formed through a deep trench etching and a filling technology. A plurality of modulation doping regions are formed at a top of the drift region by an epitaxy and an ion implantation. A modulation region is introduced, wherein the modulation region flexibly modifies capacitance characteristics and achieve improved dynamic characteristics.

公开(公告)号：US20190237576A1

公开(公告)日：2019-08-01

申请号：US15955706

申请日：2018-04-18

Applicant: University of Electronic Science and Technology of China

Inventor： Ming QIAO ,  Zhengkang WANG ,  Ruidi WANG ,  Zhao QI ,  Bo ZHANG

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/40 ,  H01L29/08

CPC classification number: H01L29/7813 ,  H01L29/063 ,  H01L29/0649 ,  H01L29/0852 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/42372 ,  H01L29/7825 ,  H01L29/7833

Abstract: A power semiconductor device including a first conductivity type semiconductor substrate, a drain metal electrode, a first conductivity type semiconductor drift region, and a second conductivity type semiconductor body region. The second conductivity type semiconductor body region includes a first conductivity type semiconductor source region and anti-punch-through structure; the anti-punch-through structure is a second conductivity type semiconductor body contact region or metal structure; the lower surface of the anti-punch-through structure coincides with the upper surface of the first conductivity type semiconductor drift region or the distance between the two is less than 0.5 μm, so that make the device avoid from punch-through. An anti-punch-through structure is introduced at the source end of the device to avoid punch-through breakdown caused by short channel and light-doped body region.