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    Predictive dead time generating circuit
    1.
    发明授权
    Predictive dead time generating circuit 有权

    公开(公告)号：US10530258B1

    公开(公告)日：2020-01-07

    申请号：US16392664

    申请日：2019-04-24

    申请人： University of Electronic Science and Technology of China

    发明人： Zekun Zhou ,  Yunkun Wang ,  Yandong Yuan ,  Shilei Li ,  Zhuo Wang ,  Bo Zhang

    IPC分类号： H02M1/38 ,  H02M3/158 ,  H02M1/00 ,  H02M3/156

    摘要： A predictive dead time generating circuit includes a dead time detecting module configured to detect a dead time between the switching off of the upper power transistor and the switching on of the lower power transistor, and a dead time between the switching off of the lower power transistor and the switching on of the upper power transistor, and to generate a first detecting signal and a second detecting signal according to the condition of whether the detected dead time reaches an optimal value. The logic control module changes the output of the delay module according to the judgment result of the dead time detecting module, so as to change the dead time between the driving signal of the upper power transistor and the driving signal of the lower power transistor.

    CMOS subthreshold reference circuit with low power consumption and low temperature drift
    2.
    发明授权
    CMOS subthreshold reference circuit with low power consumption and low temperature drift 有权

    公开(公告)号：US10146238B2

    公开(公告)日：2018-12-04

    申请号：US15599484

    申请日：2017-05-19

    申请人： University of Electronic Science and Technology of China

    发明人： Zekun Zhou ,  Yao Wang ,  Jianwen Cao ,  Hongming Yu ,  Yunkun Wang ,  Anqi Wang ,  Zhuo Wang ,  Bo Zhang

    IPC分类号： G05F1/10 ,  G05F3/02 ,  G05F1/46 ,  G05F3/24 ,  G05F3/16 ,  H02J7/00

    摘要： A resistorless CMOS low power voltage reference circuit is provided. The start-up circuit is used to prevent the circuit to stay in the zero state and stop working when the circuit gets out of the zero state. The self-biased VPTAT generating circuit generate the voltage VPTAT which has positive temperature coefficient. The square-law current generating circuit generates a square-law current which is proportional to μT2 through the VPTAT. Finally, the reference voltage VREF is obtained by introducing the square-law current into the reference voltage output circuit. The reference voltage VREF of this application can realize approximative zero temperature coefficient in the temperature range of −40° C.˜100° C. This application improves temperature characteristic which may be poorer due to temperature nonlinearity of carrier mobility based on the traditional subthreshold reference. This application can reduce the power consumption from μW level to nW level and realize low power consumption.