Transfer of vertically aligned ultra-high density nanowires onto flexible substrates

    公开(公告)号:US10745816B2

    公开(公告)日:2020-08-18

    申请号:US15766589

    申请日:2016-10-24

    Abstract: Various examples are provided for vertically aligned ultra-high density nanowires and their transfer onto flexible substrates. In one example, a method includes forming a plurality of vertically aligned nanowires inside channels of an anodized alumina (AAO) template on an aluminum substrate, where individual nanowires of the plurality of vertically aligned nanowires extend to a distal end from a proximal end adjacent to the aluminum substrate; removing the aluminum substrate and a portion of the AAO template to expose a surface of the AAO template and a portion of the proximal end of the individual nanowires; depositing an interlayer on the exposed surface of the AAO template and the exposed portion of the individual nanowires; and removing the AAO template from around the plurality of vertically aligned nanowires embedded in the interlayer.

    TRANSFER OF VERTICALLY ALIGNED ULTRA-HIGH DENSITY NANOWIRES ONTO FLEXIBLE SUBSTRATES

    公开(公告)号:US20180298507A1

    公开(公告)日:2018-10-18

    申请号:US15766589

    申请日:2016-10-24

    Abstract: Various examples are provided for vertically aligned ultra-high density nanowires and their transfer onto flexible substrates. In one example, a method includes forming a plurality of vertically aligned nanowires inside channels of an anodized alumina (AAO) template on an aluminum substrate, where individual nanowires of the plurality of vertically aligned nanowires extend to a distal end from a proximal end adjacent to the aluminum substrate; removing the aluminum substrate and a portion of the AAO template to expose a surface of the AAO template and a portion of the proximal end of the individual nanowires; depositing an interlayer on the exposed surface of the AAO template and the exposed portion of the individual nanowires; and removing the AAO template from around the plurality of vertically aligned nanowires embedded in the interlayer.

Patent Agency Ranking