公开(公告)号：US08084315B2

公开(公告)日：2011-12-27

申请号：US12622816

申请日：2009-11-20

申请人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

发明人： Katsuhiko Yamamoto ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/792

CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

公开(公告)号：US20100123183A1

公开(公告)日：2010-05-20

申请号：US12622816

申请日：2009-11-20

申请人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

发明人： Katsuhiko YAMAMOTO ,  Tadashi Terasaki ,  Yoshiki Yonamoto ,  Hirotaka Hamamura

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L21/28282 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28273 ,  H01L21/3115 ,  H01L21/3144 ,  H01L29/513 ,  H01L29/518 ,  H01L29/7885

摘要： A technique capable of improving the memory retention characteristics of a non-volatile memory is provided. In particular, a technique of fabricating a non-volatile semiconductor memory device is provided capable of enhancing the film quality of a silicon oxide film even when a silicon oxide film as a first potential barrier film is formed with a plasma oxidation method to improve the memory retention characteristics of the non-volatile memory. After a silicon oxide film, which is a main component of a first potential barrier film, is formed with a plasma oxidation method, plasma nitridation at a high temperature and a heat treatment in an atmosphere containing nitric oxide are performed in combination, thereby forming a silicon oxynitride film on the surface of the silicon oxide film, and segregating nitrogen to an interface between the silicon oxide film and a semiconductor substrate.

摘要翻译： 提供了一种能够提高非易失性存储器的记忆保持特性的技术。 特别地，提供一种制造非挥发性半导体存储器件的技术，即使用等离子体氧化法形成作为第一势垒膜的氧化硅膜来提高氧化硅膜的膜质量，从而提高记忆性 非易失性存储器的保留特性。 在作为第一势垒膜的主要成分的氧化硅膜之后，通过等离子体氧化法形成，在高温下进行等离子体氮化，并且在含有一氧化氮的气氛中进行热处理，从而形成 在氧化硅膜的表面上形成氮氧化硅膜，并将氮分离成氧化硅膜和半导体衬底之间的界面。

公开(公告)号：US08066894B2

公开(公告)日：2011-11-29

申请号：US11886529

申请日：2006-03-14

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： B44C1/22

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

公开(公告)号：US20090311876A1

公开(公告)日：2009-12-17

申请号：US12457493

申请日：2009-06-12

申请人： Tadashi Terasaki

发明人： Tadashi Terasaki

IPC分类号： H01L21/302 ,  C23C16/513

CPC分类号： H01L21/32138 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/3405 ,  H01L21/28247 ,  H01L21/28273 ,  H01L29/517

摘要： A manufacturing method of a semiconductor device, including the steps of: loading into a processing chamber a substrate having a high dielectric gate insulating film and a metal electrode, with a side wall exposed by etching; applying oxidation processing to the substrate by supplying thereto hydrogen-containing gas and oxygen-containing gas excited by plasma, with the substrate heated to a temperature not allowing the high dielectric gate insulating film to be crystallized, in the processing chamber; and unloading the substrate after processing from the processing chamber.

摘要翻译： 一种半导体器件的制造方法，包括以下步骤：将具有高电介质栅极绝缘膜和金属电极的衬底加载到具有通过蚀刻暴露的侧壁的处理室中; 通过向处理室中的含有氢的气体和由等离子体激发的含氧气体供给氧化处理，将基板加热到不允许高介电栅极绝缘膜的温度结晶的温度; 以及从处理室处理后卸载基板。

公开(公告)号：US20100317199A1

公开(公告)日：2010-12-16

申请号：US12801444

申请日：2010-06-09

申请人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

发明人： Tadashi Horie ,  Akito Hirano ,  Tadashi Terasaki

IPC分类号： H01L21/46

CPC分类号： C23C16/34 ,  C23C16/56 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2001 ,  H01L21/76856 ,  H01L21/76862 ,  H01L28/60

摘要： To reduce a residual amount of chlorine atoms and oxygen atoms in a metal nitride film, and improve oxidation resistance of the metal nitride, film, in a temperature range of not deteriorating the characteristics of other film adjacent to the metal nitride film. A substrate processing apparatus is provided, comprising: a processing chamber into which a substrate is loaded, having thereon a substrate containing oxygen atoms, chlorine atoms, and metal atoms; a substrate support part for supporting and heating the substrate in the processing chamber; a gas supply part for supplying nitrogen atoms-containing gas and hydrogen atoms-containing gas into the processing chamber; a gas exhaust part for exhausting inside of the processing chamber; a plasma generation part for exciting the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber; and a control part for controlling the substrate support part, the gas supply part, and the plasma generation part.

摘要翻译： 为了减少金属氮化物膜中的氯原子和氧原子的残留量，并且在不会使与金属氮化物膜相邻的其它膜的特性不劣化的温度范围内提高金属氮化物膜的抗氧化性。 提供了一种基板处理装置，包括：处理室，其上装载有基板，其上具有含有氧原子，氯原子和金属原子的基板; 用于在处理室中支撑和加热衬底的衬底支撑部分; 用于向所述处理室供给含氮原子的气体和含氢原子的气体的气体供给部; 用于排出处理室内部的排气部分; 用于激发含氮原子的气体和供给到处理室中的含氢原子气体的等离子体产生部件; 以及用于控制基板支撑部分，气体供应部分和等离子体产生部分的控制部分。

公开(公告)号：US07795156B2

公开(公告)日：2010-09-14

申请号：US11664287

申请日：2005-10-31

申请人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

发明人： Tadashi Terasaki ,  Akito Hirano ,  Masanori Nakayama ,  Unryu Ogawa

IPC分类号： H01L21/469

CPC分类号： H01L21/28273 ,  H01J37/32678 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02332 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/31662

摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.

摘要翻译： 公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜 氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理 通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤， 热氮化。

公开(公告)号：US20080138994A1

公开(公告)日：2008-06-12

申请号：US11886529

申请日：2006-03-14

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H01L21/00

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A starting substrate can be appropriately oxidized, while oxidation of the starting substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a starting substrate to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the starting substrate to form a plasma discharge, and processing the starting substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化起始衬底，同时抑制起始衬底的氧化。 本发明包括通过使氢（H 2/2）气体和氧（O 2 2 N）的混合气体或供给到 起始衬底以形成等离子体放电，并通过混合等离子体处理起始衬底; 以及通过使供给到起始衬底的氢（H 2/2 N）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理起始衬底。

公开(公告)号：US20090253272A1

公开(公告)日：2009-10-08

申请号：US12382983

申请日：2009-03-27

申请人： Tadashi Terasaki

发明人： Tadashi Terasaki

IPC分类号： H01L21/316 ,  C23C16/513

CPC分类号： H01L21/31662 ,  C23C16/308 ,  C23C16/503 ,  H01L21/0214 ,  H01L21/02249 ,  H01L21/02252 ,  H01L21/3145

摘要： A gate insulating film with less leakage current is formed, while a surface temperature of a silicon substrate is decreased. Gas containing oxygen atoms and nitrogen atoms is supplied into a processing chamber, then the gas containing the oxygen atoms and the nitrogen atoms is activated by plasma, and the silicon substrate is subjected to processing by plasma, and a silicon dioxide film containing nitrogen is formed.

摘要翻译： 形成具有较小漏电流的栅极绝缘膜，而硅衬底的表面温度降低。 将含有氧原子和氮原子的气体供给到处理室中，然后通过等离子体激活含有氧原子和氮原子的气体，并且通过等离子体对硅衬底进行加工，形成含氮的二氧化硅膜 。

公开(公告)号：US06794308B2

公开(公告)日：2004-09-21

申请号：US09727547

申请日：2000-12-04

申请人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

发明人： Ming Jang Hwang ,  Keizo Hosoda ,  Shintaro Aoyama ,  Tadashi Terasaki ,  Tsuyoshi Tamaru

IPC分类号： H01L2131

CPC分类号： C23C16/45519 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/4557 ,  C23C16/4558

摘要： A method of reducing by-product deposition inside wafer processing equipment includes providing a chamber having a peripheral inner wall and placing a semiconductor wafer within the chamber. The method also includes placing a ring within the chamber proximate the peripheral inner wall and introducing a plurality of reactant gases into the chamber and reacting the gases. The method also includes introducing a heated gas into the chamber through the ring proximate the peripheral inner wall to increase the temperature of the peripheral inner wall.

摘要翻译： 减少晶片处理设备内的副产物沉积的方法包括提供具有周边内壁并将半导体晶片放置在室内的室。 该方法还包括将腔环放置在邻近周边内壁的腔室内，并将多个反应气体引入腔室并使气体反应。 该方法还包括通过靠近周围内壁的环将加热的气体引入室中，以增加周边内壁的温度。

公开(公告)号：US08334215B2

公开(公告)日：2012-12-18

申请号：US12320767

申请日：2009-02-04

申请人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

发明人： Tatsushi Ueda ,  Tadashi Terasaki ,  Unryu Ogawa ,  Akito Hirano

IPC分类号： H01L21/302

CPC分类号： H01L21/02236 ,  C23C16/50 ,  C23F1/00 ,  C23F1/08 ,  H01L21/0223 ,  H01L21/02233 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28247 ,  H01L21/28273

摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.

摘要翻译： 可以适当地氧化基板，同时抑制基板的氧化。 本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合 等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。