公开(公告)号：US08329049B2

公开(公告)日：2012-12-11

申请号：US12375272

申请日：2007-06-26

申请人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

发明人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

IPC分类号： B23P15/00 ,  C03C25/00 ,  C23F1/00 ,  B05D3/00

CPC分类号： B81C99/0085

摘要： The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate pre-structured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.

摘要翻译： 本发明涉及一种制造纳米结构的方法，包括以下步骤：预先构建适于接纳纳米结构以在基底上形成纳米疏液（2）的基底（1），所述纳米凹槽具有从底部延伸的侧面（4） （1a）和从所述侧面延伸的顶面（3），然后沉积在预先构造成用于形成纳米结构的单层或多层涂层的基板上; 并且还包括：向所述预结构化基底或所述涂层添加适于通过机械，热机械或振动型的外部作用使所述涂层和所述基底分离的分离层; 并且在衬底和/或涂层上施加这种外部作用以通过将其从纳米溢液的顶面分离而选择性地回收涂层的顶部，使得该顶部构成一部分或全部纳米结构。

公开(公告)号：US20100003421A1

公开(公告)日：2010-01-07

申请号：US12375272

申请日：2007-06-26

申请人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

发明人： Ursula Ebels ,  Bernard Dieny ,  Dominique Lestelle ,  Eric Gautier

IPC分类号： B05D3/14 ,  B05D3/00 ,  B05D3/06

CPC分类号： B81C99/0085

摘要： The present invention relates to a method of fabricating a nanostructure, comprising the following steps: prestructuring a substrate (1) adapted to receive the nanostructure to form a nanorelief (2) on the substrate, the nanorelief having flanks (4) extending from a bottom (1a) of the substrate and a top face (3) extending from said flanks, and then depositing on the substrate pre-structured in this way a single layer or multilayer coating intended to form the nanostructure; and further comprising: adding to the prestructured substrate or to the coating a separation layer adapted to enable separation of the coating and the substrate by external action of mechanical, thermomechanical or vibratory type; and exerting this external action on the substrate and/or the coating to recover selectively a top portion of the coating by separating it from the top face of the nanorelief so that this top portion constitutes some or all of the nanostructure.

摘要翻译： 本发明涉及一种制造纳米结构的方法，包括以下步骤：预先构建适于接纳纳米结构以在基底上形成纳米疏液（2）的基底（1），所述纳米凹槽具有从底部延伸的侧面（4） （1a）和从所述侧面延伸的顶面（3），然后沉积在预先构造成用于形成纳米结构的单层或多层涂层的基板上; 并且还包括：向所述预结构化基底或所述涂层添加适于通过机械，热机械或振动型的外部作用使所述涂层和所述基底分离的分离层; 并且在衬底和/或涂层上施加这种外部作用以通过将其从纳米溢液的顶面分离而选择性地回收涂层的顶部，使得该顶部构成一部分或全部纳米结构。

公开(公告)号：US08063709B2

公开(公告)日：2011-11-22

申请号：US12525651

申请日：2007-02-21

申请人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

发明人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

IPC分类号： H03B17/00

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H03B15/006

摘要： The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (jop) through said structure and a magnetic field (Hext) in the plane of the second layer. It makes use of a region of bistability and hysteretic behaviour to trigger and stop the voltage oscillations.

摘要翻译： 本发明涉及一种操作自旋转移转矩结构以产生电压振荡的方法，所述结构包括具有固定的磁化矢量的第一层磁性材料，非磁性材料的间隔物和具有自由基的第二磁性材料层 磁化矢量。 该方法包括通过所述结构施加电流（jop）和在第二层的平面中施加磁场（Hext）。 它利用双稳态和滞后行为的区域来触发和停止电压振荡。

公开(公告)号：US20110007560A1

公开(公告)日：2011-01-13

申请号：US12787746

申请日：2010-05-26

申请人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

发明人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

IPC分类号： G11C11/14 ,  H01L29/82

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic device includes a magnetic reference layer with a fixed magnetisation direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetisation direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarising layer with a magnetisation perpendicular to that of the reference layer, and located out of the plane of the spin polarising layer if the magnetisation of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarising layer if the magnetisation of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarising layer and the storage layer.

摘要翻译： 磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和 存储层和具有垂直于参考层的磁化的磁性自旋偏振层，并且如果参考层的磁化被定向在参考层的平面中，并且位于参考层的平面内，则位于自旋极化层的平面之外，或者位于 如果参考层的磁化指向垂直于参考层的平面的自旋极化层的平面。 参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。

公开(公告)号：US20100039181A1

公开(公告)日：2010-02-18

申请号：US12525651

申请日：2007-02-21

申请人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

发明人： Ioana Firastrau ,  Ursula Ebels ,  Bernard Dieny

IPC分类号： H03B17/00

CPC分类号： H01F10/3254 ,  B82Y25/00 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/329 ,  H03B15/006

摘要： The invention relates to a method of operating a spin-transfer torque structure to generate voltage oscillations, said structure comprising a first layer of magnetic material having a fixed magnetization vector, a spacer of non magnetic material and a second layer of magnetic material having a free magnetization vector. The method includes the application of a current (jop) through said structure and a magnetic field (Hext) in the plane of the second layer. It makes use of a region of bistability and hysteretic behaviour to trigger and stop the voltage oscillations.

摘要翻译： 本发明涉及一种操作自旋转移转矩结构以产生电压振荡的方法，所述结构包括具有固定的磁化矢量的第一层磁性材料，非磁性材料的间隔物和具有自由基的第二磁性材料层 磁化矢量。 该方法包括通过所述结构施加电流（jop）和在第二层的平面中施加磁场（Hext）。 它利用双稳态和滞后行为的区域来触发和停止电压振荡。

公开(公告)号：US08542072B2

公开(公告)日：2013-09-24

申请号：US13245540

申请日：2011-09-26

申请人： Bernard Dieny ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Liliana Prejbeanu

发明人： Bernard Dieny ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Liliana Prejbeanu

IPC分类号： H03B28/00

CPC分类号： H03B15/006 ,  H01L43/08

摘要： A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.

摘要翻译： 射频振荡器包括电磁流能够流动的磁阻器件。 该装置包括堆叠，其包括：磁化层，其磁化基本上是固定的方向; 无磁层; 以及介于自由层和捕获层之间的非磁性中间层。 该振荡器还包括能够在构成叠层的层中并且在垂直于包含这些层的平面的方向上产生电子电流的机构。 至少自由层在其中心没有任何材料。 流过堆叠的电子密度能够以自由层中的自由层周围的自由层流动的歪斜涡流的形状在微磁结构中产生磁化。

公开(公告)号：US08279666B2

公开(公告)日：2012-10-02

申请号：US12787746

申请日：2010-05-26

申请人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

发明人： Bernard Dieny ,  Cristian Papusoi ,  Ursula Ebels ,  Dimitri Houssameddine ,  Liliana Buda-Prejbeanu ,  Ricardo Sousa

IPC分类号： G11C11/14

CPC分类号： H01L27/228 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/1284 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/10

摘要： A magnetic device includes a magnetic reference layer with a fixed magnetization direction located either in the plane of the layer or perpendicular to the plane of the layer, a magnetic storage layer with a variable magnetization direction, a non-magnetic spacer separating the reference layer and the storage layer and a magnetic spin polarizing layer with a magnetization perpendicular to that of the reference layer, and located out of the plane of the spin polarizing layer if the magnetization of the reference layer is directed in the plane of the reference layer or in the plane of the spin polarizing layer if the magnetization of the reference layer is directed perpendicular to the plane of the reference layer. The spin transfer coefficient between the reference layer and the storage layer is higher than the spin transfer coefficient between the spin polarizing layer and the storage layer.

摘要翻译： 磁性装置包括具有固定磁化方向的磁性参考层，其位于层的平面中或垂直于层的平面，具有可变磁化方向的磁存储层，分离参考层的非磁性间隔区和 存储层和具有垂直于参考层的磁化的磁自旋偏振层，并且如果参考层的磁化指向参考层的平面或位于参考层的平面内，则其位于自旋偏振层的平面之外 如果参考层的磁化垂直于参考层的平面指向自旋极化层的平面。 参考层和存储层之间的自旋传递系数高于自旋偏振层和存储层之间的自旋传递系数。

公开(公告)号：US20120075031A1

公开(公告)日：2012-03-29

申请号：US13245540

申请日：2011-09-26

申请人： Bernard Dieny ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Liliana Prejbeanu

发明人： Bernard Dieny ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Liliana Prejbeanu

IPC分类号： H03B5/40

CPC分类号： H03B15/006 ,  H01L43/08

摘要： A radio-frequency oscillator incorporates a magnetoresistive device within which an electron current is able to flow. The device includes a stack including: a magnetic trapped layer, the magnetization of which is of substantially fixed direction; a magnetic free layer; and a non-magnetic intermediate layer-interposed between the free layer and the trapped layer. The oscillator also includes a mechanism capable of making an electron current flow in the layers constituting the stack and in a direction perpendicular to the plane which contains the layers. At least the free layer is devoid of any material at its center. The electron current density flowing through the stack is capable of generating a magnetization in the free layer in a micromagnetic configuration in the shape of a skewed vortex flowing in the free layer around the center of the free layer.

摘要翻译： 射频振荡器包括电磁流能够流动的磁阻器件。 该装置包括堆叠，其包括：磁化层，其磁化基本上是固定的方向; 无磁层; 以及介于自由层和捕获层之间的非磁性中间层。 该振荡器还包括能够在构成叠层的层中并且在垂直于包含这些层的平面的方向上产生电子电流的机构。 至少自由层在其中心没有任何材料。 流过堆叠的电子密度能够以自由层中的自由层周围的自由层流动的歪斜涡流的形状在微磁结构中产生磁化。

公开(公告)号：US20130002362A1

公开(公告)日：2013-01-03

申请号：US13518054

申请日：2010-12-20

申请人： Marie Claire Cyrille ,  Bertrand Delaet ,  Ursula Ebels ,  Dimitri Houssameddine

发明人： Marie Claire Cyrille ,  Bertrand Delaet ,  Ursula Ebels ,  Dimitri Houssameddine

IPC分类号： H03B5/30

CPC分类号： H03B15/006

摘要： A radiofrequency oscillator comprises: a free layer (4), a current injector (6) for injecting spin-polarized current into the free layer, this injector having a spin-polarized current injection face (16) directly in contact with the free layer, a magnetoresistive contact (8) having a measurement face (26) directly in contact with the free layer, in order to form, in combination with the free layer, a tunnel junction for measuring the precession of the magnetization of the free layer, a conducting pad (30) directly in contact with the free layer in order to make an electrical current flow through the injector without passing through the magnetoresistive contact. At least part of the measurement face (26) and part of the injection face (16) are placed facing each other on each side of the free layer (4).

摘要翻译： 射频振荡器包括：自由层（4），用于将自旋极化电流注入自由层的电流注入器（6），该注入器具有直接与自由层接触的自旋极化电流注入面（16） 具有直接与自由层接触的测量面（26）的磁阻触点（8），以便与自由层组合形成用于测量自由层的磁化进动的隧道结，导电 焊盘（30）直接与自由层接触，以便使电流流过注射器而不通过磁阻触点。 所述测量面（26）的至少一部分和所述注入面（16）的一部分在所述自由层（4）的每一侧彼此相对放置。

公开(公告)号：US08922285B2

公开(公告)日：2014-12-30

申请号：US13582291

申请日：2011-03-01

申请人： Dimitri Houssameddine ,  Bertrand Delaet ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Michael Quinsat

发明人： Dimitri Houssameddine ,  Bertrand Delaet ,  Marie-Claire Cyrille ,  Ursula Ebels ,  Michael Quinsat

IPC分类号： H03B15/00 ,  H03L5/00 ,  H03L7/26

CPC分类号： H03B15/006 ,  H03L5/00 ,  H03L7/26

摘要： The invention relates to a radiofrequency oscillator which incorporates: a spin-polarized electric current magnetoresistive device (6), a terminal (18) for controlling the frequency or amplitude of the oscillating signal, a servo loop (34) connected between the output terminal and the control terminal for applying a control signal to the control terminal in order to slave a characteristic of the oscillating signal to a reference value, the servo loop (34) comprising: a sensor (36) of the amplitude of the oscillating signal oscillations, and a comparator (38) capable of generating the control signal according to the measured amplitude and the reference value.

摘要翻译： 本发明涉及一种射频振荡器，其包括：自旋极化电流磁阻器件（6），用于控制振荡信号的频率或振幅的端子（18），连接在输出端子和 所述控制端子用于向所述控制端子施加控制信号以将所述振荡信号的特性从属于参考值，所述伺服环路（34）包括：振荡信号振荡幅度的传感器（36），以及 能够根据所测量的振幅和基准值产生控制信号的比较器（38）。