公开(公告)号：US10886455B2

公开(公告)日：2021-01-05

申请号：US15664784

申请日：2017-07-31

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

发明人： Jia Jie Xia ,  Rakesh Kumar ,  Minu Prabhachandran Nair ,  Nagarajan Ranganathan

IPC分类号： H01L41/113 ,  H04R17/02 ,  H01L41/053 ,  H01L41/332 ,  H01L41/047 ,  H01L41/08 ,  H01L41/29 ,  B81B3/00 ,  H04R31/00

摘要： A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.

公开(公告)号：US11963452B2

公开(公告)日：2024-04-16

申请号：US17103894

申请日：2020-11-24

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

发明人： Jia Jie Xia ,  Rakesh Kumar ,  Minu Prabhachandran Nair ,  Nagarajan Ranganathan

IPC分类号： H10N30/30 ,  B81B3/00 ,  H04R17/02 ,  H10N30/00 ,  H10N30/06 ,  H10N30/082 ,  H10N30/87 ,  H10N30/88 ,  H04R31/00

CPC分类号： H10N30/302 ,  B81B3/001 ,  H04R17/02 ,  H10N30/06 ,  H10N30/082 ,  H10N30/1051 ,  H10N30/308 ,  H10N30/877 ,  H10N30/883 ,  B81B2201/0257 ,  H04R31/00 ,  H04R2201/003 ,  Y10T29/42

摘要： A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.