公开(公告)号：US20240122074A1

公开(公告)日：2024-04-11

申请号：US18545049

申请日：2023-12-19

申请人： FUJIFILM Corporation

发明人： Yoshinori Tamada

IPC分类号： H10N30/857 ,  H10N30/00

CPC分类号： H10N30/857 ,  H10N30/1051

摘要： Provided is a piezoelectric film which is capable of suppressing a decrease in acoustic characteristics associated with use of a long period of time and has high durability. The piezoelectric film includes a piezoelectric layer consisting of a polymer-based piezoelectric composite material which contains piezoelectric particles in a matrix containing a polymer material and electrode layers formed on both surfaces of the piezoelectric layer, in which, in a case where a smaller value of a domain ratio X between a c domain and an a domain, which is measured by an X-ray diffraction method from one main surface side of the piezoelectric layer, or a domain ratio Y between a c domain and an a domain, which is measured by an X-ray diffraction method from the other main surface side of the piezoelectric layer, is set to 1.00, the other domain ratio is 1.05 or more.

公开(公告)号：US11910718B2

公开(公告)日：2024-02-20

申请号：US17014808

申请日：2020-09-08

申请人： XAAR TECHNOLOGY LIMITED

发明人： Peter Mardilovich ,  Susan Trolier-McKinstry

IPC分类号： H10N30/85 ,  H10N30/06 ,  H10N30/078 ,  H10N30/87 ,  H10N30/00 ,  H10N30/20 ,  H10N30/853 ,  B41J2/14

CPC分类号： H10N30/85 ,  B41J2/14233 ,  H10N30/06 ,  H10N30/078 ,  H10N30/1051 ,  H10N30/2047 ,  H10N30/8554 ,  H10N30/87 ,  B41J2002/14266

摘要： A piezoelectric thin film element having a first electrode, a second electrode and a piezoelectric thin film between the electrodes, wherein the thin film comprises a laminate having two or more piezoelectric thin film layers and wherein a first thin film layer is doped by one or more dopants and a second film layer is doped by one or more dopants and wherein at least one dopant of the second thin film layer is different from the dopant or dopants of the first thin film layer.

公开(公告)号：US11808731B2

公开(公告)日：2023-11-07

申请号：US17135498

申请日：2020-12-28

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Jui-Cheng Huang ,  Yi-Hsien Chang ,  Chin-Hua Wen ,  Chun-Ren Cheng ,  Shih-Fen Huang ,  Tung-Tsun Chen ,  Yu-Jie Huang ,  Ching-Hui Lin ,  Sean Cheng ,  Hector Chang

IPC分类号： G01N27/414 ,  B01L3/00 ,  B01F31/85 ,  B01F33/30 ,  H10N30/00 ,  H10N30/20 ,  G01N33/543 ,  C12Q1/6825

CPC分类号： G01N27/4145 ,  B01F31/85 ,  B01F33/30 ,  B01F33/3045 ,  B01L3/502707 ,  B01L3/502715 ,  B01L3/502761 ,  B01L3/502792 ,  G01N33/5438 ,  H10N30/1051 ,  H10N30/2042 ,  H10N30/2047 ,  B01L2200/12 ,  B01L2300/06 ,  B01L2300/0645 ,  B01L2300/0663 ,  B01L2300/0819 ,  B01L2300/0887 ,  B01L2300/1827 ,  C12Q1/6825

摘要： A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.

公开(公告)号：US20230320223A1

公开(公告)日：2023-10-05

申请号：US18022652

申请日：2020-08-24

申请人： Applied Materials, Inc.

发明人： Abhijeet Laxman SANGLE ,  Vijay Bhan SHARMA ,  Yuan XUE ,  Ankur KADAM ,  Bharatwaj RAMAKRISHNAN ,  Uday PAI ,  Nilesh PATIL

IPC分类号： H10N30/50 ,  H10N30/093 ,  H10N30/00 ,  H10N30/853 ,  H10N30/87

CPC分类号： H10N30/50 ,  H10N30/093 ,  H10N30/1051 ,  H10N30/8554 ,  H10N30/877

摘要： Disclosed are methods and apparatus for depositing uniform layers on a substrate (201) for piezoelectric applications. An ultra-thin seed layer (308) having a uniform thickness from center to edge thereof is deposited on a substrate (201). A template layer (310) closely matching the crystal structure of a subsequently formed piezoelectric material layer (312) is deposited on a substrate (201). The uniform thickness and orientation of the seed layer (308) and the template layer (310), in turn, facilitate the growth of piezoelectric materials with improved crystallinity and piezoelectric properties.

公开(公告)号：US20230276710A1

公开(公告)日：2023-08-31

申请号：US18172368

申请日：2023-02-22

申请人： E Ink California, LLC

发明人： Yuriy Borisovich MATUS ,  Haiyan GU ,  Ali SARVI

IPC分类号： H10N30/857 ,  H10N30/00 ,  G02F1/1676 ,  G02F1/1343 ,  G02F1/16757 ,  G02F1/167 ,  C08F14/22 ,  C08K5/55 ,  C08J5/18

CPC分类号： H10N30/857 ,  H10N30/1051 ,  G02F1/1676 ,  G02F1/13439 ,  G02F1/16757 ,  G02F1/167 ,  C08F14/22 ,  C08K5/55 ,  C08J5/18 ,  C08J2327/16

摘要： Piezoelectric films including ionic liquids and methods of making piezoelectric films including ionic liquids. The resulting films have higher levels of beta phase and can be poled using external fields without additional treatment, such as stretching. The films are light-transparent. In some embodiments, the piezoelectric material is used to create piezo-electrophoretic films that can be patterned for use as security markers, authentication films, or sensors. The films are generally flexible. Some films are less than 100 μm in thickness. Electrophoretic displays formed from the piezoelectric films do not require an external power source.

公开(公告)号：US11712222B2

公开(公告)日：2023-08-01

申请号：US17067139

申请日：2020-10-09

申请人： eXo Imaging, Inc.

发明人： Yusuf Haque ,  Sandeep Akkaraju ,  Janusz Bryzek ,  Brian Bircumshaw

IPC分类号： B06B1/06 ,  H10N30/00 ,  A61B8/00 ,  G01S7/52 ,  H10N30/88 ,  H10N30/20 ,  A61B8/08 ,  A61B8/14 ,  B06B1/02 ,  G01S7/521 ,  G01S15/89

CPC分类号： A61B8/4494 ,  A61B8/0883 ,  A61B8/145 ,  A61B8/4483 ,  A61B8/4488 ,  A61B8/461 ,  A61B8/488 ,  A61B8/5207 ,  A61B8/546 ,  B06B1/0215 ,  B06B1/0238 ,  B06B1/0629 ,  B06B1/0662 ,  B06B1/0692 ,  G01S7/521 ,  G01S7/52046 ,  G01S7/52079 ,  G01S15/8925 ,  H10N30/1051 ,  H10N30/2047 ,  H10N30/2048 ,  H10N30/88 ,  A61B8/4427 ,  A61B8/4472 ,  B06B2201/76

摘要： An imaging device includes a two dimensional array of piezoelectric elements. Each piezoelectric element includes: a piezoelectric layer; a bottom electrode disposed on a bottom side of the piezoelectric layer and configured to receive a transmit signal during a transmit mode and develop an electrical charge during a receive mode; and a first top electrode disposed on a top side of the piezoelectric layer; and a first conductor, wherein the first top electrodes of a portion of the piezoelectric elements in a first column of the two dimensional array are electrically coupled to the first conductor.

公开(公告)号：US20240224806A1

公开(公告)日：2024-07-04

申请号：US18606707

申请日：2024-03-15

申请人： DAIKIN INDUSTRIES, LTD.

发明人： Masaharu ARIMOTO ,  Saori SAKAMI ,  Tetsuhiro KODANI ,  Takashi KANEMURA

IPC分类号： H10N30/85 ,  C08J5/18 ,  H10N30/00 ,  H10N30/87

CPC分类号： H10N30/85 ,  C08J5/18 ,  H10N30/1051 ,  H10N30/87 ,  C08J2327/16

摘要： An object is to provide an organic piezoelectric film with a high level of piezoelectricity, a high level of transparency, and a low level of retardation. The organic piezoelectric film of the present disclosure has a total light transmittance of 90% or more, an internal haze value of 0.2%/μm or less per unit film thickness or an internal haze value of 4% or less, piezoelectric constant d33 of 13 pC/N or more, and a retardation within the range of 0.01 to 10 nm/μm per unit film thickness or a retardation within the range of 0.1 to 900 nm.

公开(公告)号：US20240215451A1

公开(公告)日：2024-06-27

申请号：US18146718

申请日：2022-12-27

申请人： Diodes Incorporated

发明人： Hideto Takagishi

IPC分类号： H10N30/30 ,  H04R7/06 ,  H04R17/02 ,  H10N30/00

CPC分类号： H10N30/308 ,  H04R7/06 ,  H04R17/02 ,  H10N30/1051 ,  H04R2400/01

摘要： An audio speaker system includes: an amplifier, where a positive input terminal of the amplifier is configured to be coupled to a first reference voltage node; and a piezo diaphragm including: a metal plate; a first piezo film attached to the metal plate, where the first piezo film is configured to function as a speaker during operation of the audio speaker system; and a second piezo film attached to the metal plate and spaced apart from the first piezo film, where the second piezo film is configured to function as a microphone during operation of the audio speaker system, where an output terminal of the amplifier is coupled to the first piezo film, and where a negative input terminal of the amplifier is coupled to the second piezo film.

公开(公告)号：US20240167859A1

公开(公告)日：2024-05-23

申请号：US18509475

申请日：2023-11-15

申请人： Neptune Technology Group Inc.

发明人： Mahesh Matam ,  Jeffrey M. Fowler

IPC分类号： G01F1/54 ,  G01F1/667 ,  H10N30/00 ,  H10N30/20

CPC分类号： G01F1/54 ,  G01F1/667 ,  H10N30/1051 ,  H10N30/2046 ,  G06Q50/06

摘要： A device and a method are described in which a flow detection service is provided. The service may include use of a piezoelectric flexural element. The piezoelectric flexural element may be disposed in an inlet, an outlet, or a passageway via which a resource may flow. The piezoelectric flexural element may output a signal responsive to a transition from a zero-flow rate to a greater than zero flow rate of the resource traversing the inlet, the passageway, and the outlet. The flow detection service may be implemented in a meter. The flow detection service may enable significant reduction of battery usage and at a low cost.

公开(公告)号：US11963452B2

公开(公告)日：2024-04-16

申请号：US17103894

申请日：2020-11-24

申请人： VANGUARD INTERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.

发明人： Jia Jie Xia ,  Rakesh Kumar ,  Minu Prabhachandran Nair ,  Nagarajan Ranganathan

IPC分类号： H10N30/30 ,  B81B3/00 ,  H04R17/02 ,  H10N30/00 ,  H10N30/06 ,  H10N30/082 ,  H10N30/87 ,  H10N30/88 ,  H04R31/00

CPC分类号： H10N30/302 ,  B81B3/001 ,  H04R17/02 ,  H10N30/06 ,  H10N30/082 ,  H10N30/1051 ,  H10N30/308 ,  H10N30/877 ,  H10N30/883 ,  B81B2201/0257 ,  H04R31/00 ,  H04R2201/003 ,  Y10T29/42

摘要： A method of forming a piezoelectric microphone with an interlock/stopper and a micro-bump and a resulting device are provided. Embodiments include forming a membrane over a Si substrate having a first and second sacrificial layer disposed on opposite surfaces thereof, the membrane being formed on the first sacrificial layer, forming a first HM over the membrane, forming first and second vias through the first HM, forming a first pad layer in the first and second vias and over an exposed top thin film, forming a trench to the first sacrificial layer between the first and second vias and a gap between the trench and second via, patterning a second HM over the membrane, in the first and second vias, the trench and the gap, and forming a second pad layer over the second HM and in exposed areas around the first and second vias to form pad structures.