公开(公告)号：US3631303A

公开(公告)日：1971-12-28

申请号：US3631303D

申请日：1970-01-19

Applicant: VARIAN ASSOCIATES

Inventor： ANTYPAS GEORGE A ,  BELL RONALD L

IPC: H01J1/34 ,  H01L15/00

CPC classification number: H01J1/34 ,  H01J2201/3423 ,  Y10S148/042 ,  Y10S148/049 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/12 ,  Y10S438/936

Abstract: A gradient of potential energy was established in the active layer of a III-V photocathode for enhancing free electron diffusion toward the emissive surface of the cathode. The energy gradient was provided by decreasing the bandgap energy across the active layer which caused the conduction level to slope downwards from the substrate to the emissive surface through progressive changes in the concentration of the III-V elements forming the active layer. Alternatively, a nonuniform concentration of active layer dopant-heavy on the substrate side and light on the emissive side of the active layer-established a built-in electric field across the active layer. The graded bandgap and/or dopant levels promote free electron drift toward the outer surface of the active layer. Layers of cesium, cesium oxide, or both, were provided over the active layer to lower the work function of the photocathode emissive surface.

公开(公告)号：US3274431A

公开(公告)日：1966-09-20

申请号：US12137861

申请日：1961-07-03

Applicant: VARIAN ASSOCIATES

Inventor： BELL RONALD L ,  KINO GORDON S ,  MANN JOSEPH K

IPC: H01J25/42

CPC classification number: H01J25/42

公开(公告)号：US3875448A

公开(公告)日：1975-04-01

申请号：US76989568

申请日：1968-10-23

Applicant: VARIAN ASSOCIATES

Inventor： BELL RONALD L

IPC: H01J29/45 ,  H01L27/00 ,  H01J31/38

CPC classification number: H01J29/451 ,  H01L27/00

Abstract: A vidicon camera tube is disclosed. The camera tube includes an electron gun at one end thereof for projecting a beam of electrons over a beam path to a target electrode formed by a photosensitive array of phototransistors. Deflection plates are provided intermediate the electron gun and target for scanning the electron beam over the array of phototransistors to derive an electrical signal in accordance with the photon image which is illuminating the array of phototransistors. The phototransistors each include one exposed terminal facing the scanning electron beam. A capacitor structure is formed on the beam scanned side of the array of phototransistors for providing substantially increased capacitance between the scanned terminals of the phototransistors and a source of stable potential such as ground potential. By providing the capacitance between the scanned terminals and ground the photon gain of the phototransistors is greatly increased above 1, thereby substantially increasing the sensitivity of the camera tube and therefore its resolution.

Abstract translation: 公开了一种视频摄像机管。 相机管在其一端包括电子枪，用于将电子束束通过光束路径投射到由光电晶体管的光敏阵列形成的目标电极。 偏转板设置在电子枪和目标物之间，用于扫描光电晶体管阵列上的电子束，以根据照射光电晶体管阵列的光子图像导出电信号。 光电晶体管各自包括面向扫描电子束的一个暴露端子。 在光电晶体管阵列的光束扫描侧上形成电容器结构，用于在光电晶体管的扫描端子和诸如地电势的稳定电位源之间提供显着增加的电容。 通过在扫描的端子和接地之间提供电容，光电晶体管的光子增益大大增加到1以上，从而显着增加了相机管的灵敏度并因此提高了其分辨率。

公开(公告)号：US3644770A

公开(公告)日：1972-02-22

申请号：US3644770D

申请日：1968-01-18

Applicant: VARIAN ASSOCIATES

Inventor： BELL RONALD L

IPC: H01J1/34 ,  H01J39/06 ,  H01J31/50

CPC classification number: H01J1/34 ,  H01J2201/3423

Abstract: A junction-type photoemitter is disclosed. The photoemitter includes a heavily doped P-type semiconductive substrate for absorbing photons of radiation to be converted into electrons to be emitted. An alkali metal layer such as cesium metal is formed over the substrate member for filling the surface energy states of the P-semiconductive substrate. Finally, a layer of cesium oxide is formed over the alkali metal layer to provide a low-work function surface facing the vacuum into which the electrons are emitted from the photoemitter. The substrate member may be made of a III-V compound semiconductor or an alloy of two different III-V compound semiconductors (each compound semiconductor including one element from the third group of Periodic Table and another element of the fifth group of the Periodic Table) to provide a semiconductive band-gap energy which is equal to or slightly more than the work function of the cesium oxide layer. The P-type semiconductive substrate member is heavily doped with a concentration of acceptor dopant greater than 3 X 1018 acceptors per cubic centimeter. Likewise, the cesium oxide layer is heavily doped with donor atoms of cesium to provide the relatively low-work function characteristic of such material. In a preferred embodiment, the P-semiconductive substrate is formed of InP or an alloy of InP and InAs. The photoemitter has improved conversion efficiency in the wavelength range from 0.5 microns to 1.37 microns wavelength.

公开(公告)号：US3473066A

公开(公告)日：1969-10-14

申请号：US3473066D

申请日：1967-08-25

Applicant: VARIAN ASSOCIATES

Inventor： BATES CLAYTON W JR ,  BELL RONALD L

IPC: A61B6/00 ,  G21K4/00 ,  H01J9/12 ,  H01J29/38 ,  H01J31/50 ,  H01J39/16

CPC classification number: H01J9/12 ,  G21K4/00 ,  H01J29/385 ,  H01J31/501