摘要:
A target material is configured to be used in a source constructed and arranged to generate a radiation beam having a wavelength in an extreme ultraviolet range. The target material includes a Gd-based composition configured to modify a melting temperature of Gd.
摘要:
A pellicle for integrated circuit equipment operating in an EUV range includes a multi-layered structure of alternating layers. The pellicle is constructed and arranged to reflect or absorb undesired radiation and to intercept debris to enhance the spectral purity of a radiation beam.
摘要:
A programmable patterning structure for use with a lithographic projection apparatus according to one embodiment of the invention includes a plurality of reflective elements A, B, C, each reflective element having two distributed Bragg reflectors 51, 52. A separation D1 between the two distributed Bragg reflectors is adjustable between a first relation, at which destructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in substantially zero reflectivity, and a second relation, in which constructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in high reflectivity.
摘要:
A source configured to generate radiation for a lithographic apparatus is disclosed. The source includes an anode, and a cathode. The cathode and the anode are configured to create a discharge in a fuel in a discharge space between the anode and the cathode so as to generate a plasma, the cathode and the anode positioned relative to each other so that, in use, current lines extending between the anode and the cathode are substantially curved so as to create a force that substantially radially compresses the plasma only in a region proximate an upper surface of the cathode or of the anode.
摘要:
A source configured to generate radiation for a lithographic apparatus is disclosed. The source includes an anode, and a cathode. The cathode and the anode are configured to create a discharge in a fuel in a discharge space between the anode and the cathode so as to generate a plasma, the cathode and the anode positioned relative to each other so that, in use, current lines extending between the anode and the cathode are substantially curved so as to create a force that substantially radially compresses the plasma only in a region proximate an upper surface of the cathode or of the anode.
摘要:
An extreme ultraviolet (EUV) microscope configured to analyze a sample. The microscope includes a source of EUV radiation constructed and arranged to generate the EUV radiation with a wavelength at least in a range of about 2-6 nm, and an optical system constructed and arranged to illuminate the sample with the EUV radiation and to collect a radiation emanating from the sample. The optical system is arranged with at least one mirror that includes a multilayer structure for in-phase reflection of at least a portion of the radiation in the range of about 2-6 nm.
摘要:
A lithographic apparatus is disclosed that includes a modulator to modulate a plurality of beams according to a desired pattern and a donor structure on to which the modulated beams impinge. The donor structure is configured such that the impinging modulated beams cause a donor material to be transferred from the donor structure to the substrate.
摘要:
A pellicle for integrated circuit equipment operating in an EUV range includes a multi-layered structure of alternating layers. The pellicle is constructed and arranged to reflect or absorb undesired radiation and to intercept debris to enhance the spectral purity of a radiation beam.
摘要:
A programmable patterning structure for use with a lithographic projection apparatus according to one embodiment of the invention includes a plurality of reflective elements A, B, C, each reflective element having two distributed Bragg reflectors 51, 52. A separation D1 between the two distributed Bragg reflectors is adjustable between a first relation, at which destructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in substantially zero reflectivity, and a second relation, in which constructive interference between reflections from the first and second distributed Bragg reflectors 51, 52 results in high reflectivity.
摘要:
A lithographic apparatus for maskless EUV applications includes an illumination system constructed and arranged to condition a radiation beam and to supply the conditioned radiation beam to a spatial light modulator, a substrate table constructed and arranged to hold a substrate, and a projection system constructed and arranged to project the conditioned radiation beam onto a target portion of the substrate. The illumination system includes a field facet mirror constructed and arranged to define a field of the conditioned radiation beam. The field facet mirror is constructed and arranged to optically match a source of radiation and the illumination system.