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1.发明公开公开(公告)号：US20230172068A1
公开(公告)日：2023-06-01
申请号：US17539206
申请日：2021-12-01
IPC: H01L41/23 , H01L41/16 , H01L41/09 , H01L41/113 , B81B7/00
CPC classification number: H01L41/23 , H01L41/16 , H01L41/09 , H01L41/1132 , B81B7/0032 , B81B2201/0271 , B81B2201/0235 , B81B2201/0242
Abstract: A method of fabricating a semiconductor substrate includes the following steps. A first wafer is provided and a first surface of the first wafer is etched to form a plurality of cavities. A second wafer is formed on the first surface, where forming the second wafer includes the following steps: providing a core substrate; forming a first insulating layer on the core substrate; and depositing a polysilicon layer on the first insulating layer and the core substrate. In addition, the polysilicon layer is bonded with the first wafer to cover the cavities, where the polysilicon layer is disposed between the first insulating layer and the first wafer. In addition, a semiconductor substrate and MEMS devices using the semiconductor substrate are also provided.
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公开(公告)号：US20230294980A1
公开(公告)日：2023-09-21
申请号：US17697957
申请日：2022-03-18
CPC classification number: B81C1/00571 , B81B3/0021 , B81C2201/014 , B81C2201/0197 , B81C2201/0181 , B81C2201/0176 , B81C2201/0104 , B81B2201/0235 , B81B2201/0242 , B81B2203/0315
Abstract: A micro-electro-mechanical system (MEMS) device includes a supporting substrate, a cavity disposed in the supporting substrate, a stopper, and a MEMS structure. The stopper is disposed between the supporting substrate and the cavity, and an inner sidewall of the stopper is in contact with the cavity. The stopper includes a filling material surrounding a periphery of the cavity, and a liner wrapping around the filling material. The MEMS structure is disposed over the cavity and attached on the stopper and the supporting substrate.
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