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公开(公告)号：US07339267B2
公开(公告)日：2008-03-04
申请号：US11140351
申请日：2005-05-26
IPC分类号： H01L23/10
CPC分类号： H01L23/482 , H01L23/481 , H01L24/29 , H01L24/32 , H01L24/83 , H01L2224/29111 , H01L2224/83192 , H01L2224/83447 , H01L2224/83801 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/10158 , H01L2924/10329 , H01L2924/14 , H01L2924/15738 , H01L2924/15763 , H01L2924/01031 , H01L2924/00014 , H01L2924/01028 , H01L2924/00
摘要： Semiconductor packages (100) that prevent the leaching of gold from back metal layers (118) into the solder (164) and methods for fabricating the same are provided. An exemplary method comprises providing a semiconductor wafer stack (110) including metal pads (112) and a substrate (116). An adhesion/plating layer (115) is formed on the substrate (116). A layer of gold (118) is plated on the adhesion/plating layer (115). The layer of gold is etched in a street area (124) to expose edge portions (128) of the layer of gold (118) and the adhesion/plating layer (115). A layer of barrier metal (130) is deposited to form an edge seal (129) about the exposed edge portions (128). The edge seal (129) prevents the leaching of gold from back metal layers (118) into the solder (162) when the wafer stack (110) is soldered to a leadframe (162).
摘要翻译： 提供了防止金从后金属层（118）浸入焊料（164）中的半导体封装（100）及其制造方法。 一种示例性方法包括提供包括金属焊盘（112）和衬底（116）的半导体晶片堆叠（110）。 在基板（116）上形成粘合/镀层（115）。 一层金（118）被镀在粘合/镀层（115）上。 在街道区域（124）中蚀刻金层以暴露金层（118）和粘附/镀层（115）的边缘部分（128）。 沉积一层阻挡金属（130）以形成围绕暴露的边缘部分（128）的边缘密封（129）。 当晶片堆叠（110）被焊接到引线框架（162）时，边缘密封件（129）防止金从后金属层（118）浸入焊料（162）中。
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公开(公告)号：US07683465B2
公开(公告)日：2010-03-23
申请号：US11856239
申请日：2007-09-17
IPC分类号： H01L23/48
CPC分类号： H01L23/49575 , H01L23/49524 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/371 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37164 , H01L2224/37599 , H01L2224/40245 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is provided that includes a leadframe, a die, and a clip. The leadframe has a flag and a power pad. The die is coupled to the flag. The clip comprises a die retaining section and a pad section. The die is coupled to the die retaining section, and the pad section extends from the die retaining section. The pad section is coupled to the power pad.
摘要翻译： 提供了一种包括引线框，模具和夹子的半导体器件。 引线框架有一个标志和一个电源垫。 模具与标志相连。 夹子包括模具保持部分和垫部分。 模具联接到模具保持部分，并且垫部分从模具保持部分延伸。 焊盘部分耦合到电源焊盘。
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公开(公告)号：US07271469B2
公开(公告)日：2007-09-18
申请号：US11142077
申请日：2005-05-31
IPC分类号： H01L23/495
CPC分类号： H01L23/49575 , H01L23/49524 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/371 , H01L2224/37144 , H01L2224/37147 , H01L2224/37155 , H01L2224/37164 , H01L2224/37599 , H01L2224/40245 , H01L2224/48095 , H01L2224/48137 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01046 , H01L2924/01079 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device is provided that includes a leadframe, a die, and a clip. The leadframe has a flag and a power pad. The die is coupled to the flag. The clip comprises a die retaining section and a pad section. The die is coupled to the die retaining section, and the pad section extends from the die retaining section. The pad section is coupled to the power pad. Methods for forming the semiconductor device are provided as well.
摘要翻译： 提供了一种包括引线框，模具和夹子的半导体器件。 引线框架有一个标志和一个电源垫。 模具与标志相连。 夹子包括模具保持部分和垫部分。 模具联接到模具保持部分，并且垫部分从模具保持部分延伸。 焊盘部分耦合到电源焊盘。 还提供了形成半导体器件的方法。
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