公开(公告)号：US20170025258A1

公开(公告)日：2017-01-26

申请号：US15289725

申请日：2016-10-10

Applicant: Veeco Instruments, Inc.

Inventor： Frank M. Cerio ,  Robert Gabriel Hieronymi

IPC: H01J37/34 ,  H01F41/18 ,  C23C14/18 ,  C23C14/35 ,  C23C14/16 ,  H01F10/14 ,  C23C14/06

CPC classification number: H01J37/3408 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/185 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/351 ,  H01F10/14 ,  H01F41/18 ,  H01J37/32082 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3452 ,  H01J37/3458

Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

Abstract translation: 用于以大于200nm /分钟的生长速率生长NiFe合金磁膜的PVD室产生小于正或负2度的磁偏移的膜，小于正或负2度的磁分散度，DR / R大于2％，薄膜应力小于50MPa。 NiFe合金以2至4英寸的距离溅射，50瓦至9千瓦的直流功率和3至8毫乇的压力。 该腔室使用独特的磁场成形磁控管，该磁控管具有布置在围绕磁控管的周边延伸的外环和内环中的磁体，除了两个径向相对的区域中，内环和外环基本上朝向磁控管的中心轴线发散。

公开(公告)号：US20150376776A1

公开(公告)日：2015-12-31

申请号：US14768027

申请日：2014-02-13

Applicant: Veeco Instruments, Inc.

Inventor： Arindom Datta ,  Frank M. Cerio ,  Sandeep Kohli ,  Boris L. Druz

IPC: C23C14/54

CPC classification number: C23C14/541 ,  C23C14/0617 ,  C23C14/34

Abstract: A thin film of material on a substrate is formed in a continuous process of a physical vapor deposition system, in which material is deposited during a variable temperature growth stage having a first phase conducted below a temperature of about 500° C., and material is continuously deposited as the temperature changes for the second phase to above about 800° C.

Abstract translation: 在物理气相沉积系统的连续过程中形成衬底上的材料薄膜，其中材料在具有在约500℃的温度以下进行的第一相的可变温度生长阶段期间沉积，并且材料是 随着第二相温度的变化，连续沉积到大约800℃以上

公开(公告)号：US20150034476A1

公开(公告)日：2015-02-05

申请号：US14324937

申请日：2014-07-07

Applicant: VEECO INSTRUMENTS, INC.

Inventor： Frank M. Cerio ,  Robert Gabriel Hieronymi

IPC: H01J37/34 ,  C23C14/34 ,  C23C14/35

CPC classification number: H01J37/3408 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/185 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/351 ,  H01F10/14 ,  H01F41/18 ,  H01J37/32082 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3452 ,  H01J37/3458

Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

Abstract translation: 用于以大于200nm /分钟的生长速率生长NiFe合金磁膜的PVD室产生小于正或负2度的磁偏移的膜，小于正或负2度的磁分散度，DR / R大于2％，薄膜应力小于50MPa。 NiFe合金以2至4英寸的距离溅射，50瓦至9千瓦的直流功率和3至8毫乇的压力。 该腔室使用独特的磁场成形磁控管，该磁控管具有布置在围绕磁控管的周边延伸的外环和内环中的磁体，除了在两个径向相对的区域内，内环和外环基本上朝向磁控管的中心轴线发散。