公开(公告)号：US11851749B2

公开(公告)日：2023-12-26

申请号：US17826809

申请日：2022-05-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jen-Chun Wang ,  Ya-Lien Lee ,  Chih-Chien Chi ,  Hung-Wen Su

IPC: C23C14/35 ,  H01L21/768 ,  H01J37/34 ,  C23C14/00 ,  C23C16/34 ,  C23C16/455 ,  C23C14/06 ,  C23C14/22 ,  H01L21/02 ,  H01L21/67 ,  C23C14/34 ,  H01L21/285 ,  C23C14/04 ,  C23C16/04 ,  H01L21/3205 ,  H01L23/532

CPC classification number: C23C14/35 ,  C23C14/0036 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/225 ,  C23C14/3492 ,  C23C14/358 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01J37/3405 ,  H01J37/3458 ,  H01L21/02183 ,  H01L21/02266 ,  H01L21/2855 ,  H01L21/67253 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/28568 ,  H01L21/32051 ,  H01L23/53238

Abstract: A semiconductor device is manufactured by modifying an electromagnetic field within a deposition chamber. In embodiments in which the deposition process is a sputtering process, the electromagnetic field may be modified by adjusting a distance between a first coil and a mounting platform. In other embodiments, the electromagnetic field may be adjusted by applying or removing power from additional coils that are also present.

公开(公告)号：US11846013B2

公开(公告)日：2023-12-19

申请号：US16945491

申请日：2020-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： David Gunther ,  Jiao Song ,  Kirankumar Neelasandra Savandaiah ,  Irena H. Wysok ,  Anthony Chih-Tung Chan

IPC: H01J37/34 ,  C23C14/16 ,  C23C14/56 ,  H01L21/768 ,  C23C14/50 ,  C23C14/35

CPC classification number: C23C14/165 ,  C23C14/351 ,  C23C14/50 ,  C23C14/56 ,  H01J37/3455 ,  H01J37/3458 ,  H01L21/76898 ,  H01J37/3405

Abstract: An apparatus leverages a physical vapor deposition (PVD) process chamber with a wafer-to-target distance of approximately 400 millimeters to deposit tantalum film on through silicon via (TSV) structures. The PVD process chamber includes a source that is configured with dual magnet source compensation. The PVD chamber also includes an upper electromagnet assembly exterior to the chamber body in close proximity to the source, a magnetron assembly in the source including dual magnets with dual radius trajectories, a shield within the chamber body, and a plurality of grounding loops that are symmetrically spaced about a periphery of a substrate support assembly and are configured to provide an RF ground return path between the substrate support assembly and the shield.

公开(公告)号：US11810770B2

公开(公告)日：2023-11-07

申请号：US17490840

申请日：2021-09-30

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiaodong Wang ,  Joung Joo Lee ,  Fuhong Zhang ,  Martin Lee Riker ,  Keith A. Miller ,  William Fruchterman ,  Rongjun Wang ,  Adolph Miller Allen ,  Shouyin Zhang ,  Xianmin Tang

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/34 ,  C23C14/54

CPC classification number: H01J37/3458 ,  C23C14/345 ,  C23C14/351 ,  C23C14/54 ,  H01J37/3402 ,  H01J37/345 ,  H01J37/3405 ,  H01J37/3411 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3452 ,  H01J37/3455

Abstract: Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

公开(公告)号：US09583319B2

公开(公告)日：2017-02-28

申请号：US14290396

申请日：2014-05-29

Applicant: BH5773 LTD

Inventor： Gennady Yumshtyk ,  Dmitri Ivanov

IPC: C23C14/34 ,  H01J37/34 ,  C23C14/35

CPC classification number: H01J37/3405 ,  C23C14/34 ,  C23C14/35 ,  C23C14/352 ,  H01J37/342 ,  H01J37/3452 ,  H01J37/3455 ,  H01J37/3458

Abstract: The invention provides devices and methods for depositing uniform coatings using cylindrical magnetron sputtering. The devices and methods of the invention are useful in depositing coatings on non-cylindrical workpiece surfaces. An assembly of electromagnets located within the bore of a hollow cylindrical emitter is used to form a magnetic field exterior to and near the exterior surface of the emitter. The magnet assembly configuration is selected to provide a magnetic field configuration compatible with the workpiece surface contour. The electromagnet assembly may be a plurality of magnet units, each unit having at least one electromagnet. The magnetic field strength from each magnet unit is separately and electrically adjustable. Each electromagnet in the assembly has a coil of electrically conducting material surrounding a specially shaped core of magnetic material.

Abstract translation: 本发明提供了使用圆柱形磁控溅射沉积均匀涂层的装置和方法。 本发明的装置和方法可用于在非圆柱形工件表面上沉积涂层。 使用位于中空圆柱形发射器的孔内的电磁体的组件在发射器的外表面外部形成磁场。 选择磁体组件配置以提供与工件表面轮廓相兼容的磁场配置。 电磁体组件可以是多个磁体单元，每个单元具有至少一个电磁体。 来自每个磁体单元的磁场强度是单独的和电可调节的。 组件中的每个电磁体具有围绕特定形状的磁性材料芯的导电材料的线圈。

公开(公告)号：US20170025258A1

公开(公告)日：2017-01-26

申请号：US15289725

申请日：2016-10-10

Applicant: Veeco Instruments, Inc.

Inventor： Frank M. Cerio ,  Robert Gabriel Hieronymi

IPC: H01J37/34 ,  H01F41/18 ,  C23C14/18 ,  C23C14/35 ,  C23C14/16 ,  H01F10/14 ,  C23C14/06

CPC classification number: H01J37/3408 ,  C23C14/0635 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/185 ,  C23C14/3414 ,  C23C14/35 ,  C23C14/351 ,  H01F10/14 ,  H01F41/18 ,  H01J37/32082 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3452 ,  H01J37/3458

Abstract: A PVD chamber for growing a magnetic film of NiFe alloy at a growth rate of greater than 200 nm/minute produces a film exhibiting magnetic skew of less than plus or minus 2 degrees, magnetic dispersion of less than plus or minus 2 degrees, DR/R of greater than 2 percent and film stress of less than 50 MPa. NiFe alloy is sputtered at a distance of 2 to 4 inches, DC power of 50 Watts to 9 kiloWats and pressure of 3 to 8 milliTorr. The chamber uses a unique field shaping magnetron having magnets arranged in outer and inner rings extending about a periphery of the magnetron except in two radially opposed regions in which the inner and outer rings diverge substantially toward a central axis of the magnetron.

Abstract translation: 用于以大于200nm /分钟的生长速率生长NiFe合金磁膜的PVD室产生小于正或负2度的磁偏移的膜，小于正或负2度的磁分散度，DR / R大于2％，薄膜应力小于50MPa。 NiFe合金以2至4英寸的距离溅射，50瓦至9千瓦的直流功率和3至8毫乇的压力。 该腔室使用独特的磁场成形磁控管，该磁控管具有布置在围绕磁控管的周边延伸的外环和内环中的磁体，除了两个径向相对的区域中，内环和外环基本上朝向磁控管的中心轴线发散。

公开(公告)号：US09299957B2

公开(公告)日：2016-03-29

申请号：US14096587

申请日：2013-12-04

Applicant: Samsung Display Co., Ltd.

Inventor： Su-Hyuk Choi

IPC: H01L51/56 ,  H01L51/52 ,  H01J37/34

CPC classification number: H01L51/56 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/3458 ,  H01L51/5253

Abstract: A method of manufacturing an organic light-emitting display apparatus includes preparing a deposition target in which an organic light-emitting portion is formed on a substrate, forming a pre-encapsulation layer for encapsulating the organic light-emitting portion by using a facing target sputtering apparatus, and forming an encapsulation layer by performing a plasma surface process on the pre-encapsulation layer by using the facing target sputtering apparatus. The facing target sputtering apparatus includes a chamber in which a mounting portion for accommodating the deposition target is provided, a gas supply portion facing the mounting portion and supplying gas to the chamber, a first target portion and a second target portion disposed in the chamber and facing each other, and an induced magnetic field coil surrounding the exterior of the chamber.

Abstract translation: 一种制造有机发光显示装置的方法包括制备在基板上形成有机发光部分的沉积靶，通过使用面对靶溅射形成用于封装有机发光部分的预封装层 装置，并且通过使用面对靶溅射装置在预封装层上执行等离子体表面处理来形成封装层。 面对靶溅射装置包括：设置有用于容纳沉积靶的安装部分的腔室，面向安装部分并将气体供应到腔室的气体供应部分，设置在腔室中的第一靶部分和第二靶部分， 并且围绕室的外部的感应磁场线圈。

公开(公告)号：US20120152896A1

公开(公告)日：2012-06-21

申请号：US12974630

申请日：2010-12-21

Applicant: Chunming Zhou ,  Liqi Wu ,  Karthik Colinjivadi ,  Emery Kuo ,  Huatan Qiu ,  KieJin Park

Inventor： Chunming Zhou ,  Liqi Wu ,  Karthik Colinjivadi ,  Emery Kuo ,  Huatan Qiu ,  KieJin Park

IPC: C23F1/04 ,  C23F1/08 ,  C23F1/00

CPC classification number: C23C14/35 ,  C23C14/345 ,  C23C14/5826 ,  C23C14/5873 ,  H01J37/3402 ,  H01J37/3452 ,  H01J37/3458 ,  H01L21/2855 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76873

Abstract: A physical vapor deposition (PVD) system and method includes a chamber including a target and a pedestal supporting a substrate. A target bias device supplies DC power to the target during etching of the substrate. The DC power is greater than or equal to 8 kW. A magnetic field generating device, including electromagnetic coils and/or permanent magnets, creates a magnetic field in a chamber of the PVD system during etching of the substrate. A radio frequency (RF) bias device supplies an RF bias to the pedestal during etching of the substrate. The RF bias is less than or equal to 120V at a predetermined frequency. A magnetic field produced in the target is at least 100 Gauss inside of the target.

Abstract translation: 物理气相沉积（PVD）系统和方法包括包括靶的腔室和支撑衬底的基座。 目标偏置装置在蚀刻基板期间向目标提供DC电力。 直流功率大于或等于8 kW。 包括电磁线圈和/或永磁体的磁场产生装置在蚀刻基板期间在PVD系统的腔室中产生磁场。 射频（RF）偏置装置在蚀刻基板期间向基座提供RF偏压。 RF偏压在预定频率下小于或等于120V。 目标中产生的磁场在目标内部至少为100高斯。

公开(公告)号：US08088263B1

公开(公告)日：2012-01-03

申请号：US12372562

申请日：2009-02-17

Applicant: Robert M. Smith

Inventor： Robert M. Smith

IPC: C23C14/35 ,  C23C14/54 ,  C23C14/56

CPC classification number: C23C14/35 ,  C23C14/3407 ,  C23C14/3485 ,  C23C14/3492 ,  C23C14/54 ,  H01J37/3452 ,  H01J37/3458

Abstract: The present invention is a device for controlling sputter coating deposition to at least one surface of at least one substrate. The device includes a magnetic structure having a plurality of electrically isolated and magnetically coupled magnetic pole piece structures. A plurality of magnetic concentric rings is mounted behind at least one target surface. A central upright common magnetic core connects the plurality of magnetic pole piece structures. A plurality of upright pole pieces arranged parallel to each other is attached to each of the magnetic pole piece structures and arranged at midpoints of the plurality of magnetic concentric rings. The magnetic structure includes a plurality of electromagnetic coils wound over the plurality of magnetic pole piece structures arranged to form sets of coils. The sets of coils can be energized in forward or reverse mode thereby impacting the target at a greater angle resulting in higher angle particle ejection.

Abstract translation: 本发明是一种用于控制对至少一个基板的至少一个表面的溅射镀层沉积的装置。 该装置包括具有多个电隔离和磁耦合磁极片结构的磁结构。 多个磁同心环安装在至少一个目标表面的后面。 中心的直立公共磁芯连接多个磁极片结构。 彼此平行布置的多个直立极片被附接到每个磁极片结构并且布置在多个磁同心环的中点处。 磁性结构包括多个电磁线圈，其卷绕在多个磁极片结构上，该磁极片结构被布置成形成一组线圈。 该组线圈可以以正向或反向模式通电，从而以更大的角度撞击目标，导致较高角度的粒子喷射。

公开(公告)号：US20110233058A1

公开(公告)日：2011-09-29

申请号：US12944907

申请日：2010-11-12

Applicant: Cheng-Tsung Liu

Inventor： Cheng-Tsung Liu

IPC: C23C14/35

CPC classification number: C23C14/35 ,  C23C14/351 ,  H01J37/3405 ,  H01J37/3458

Abstract: A magnetron plasma sputtering apparatus includes a sputtering chamber having a loading portion and an engaging portion opposite to the loading portion. A substrate is mounted to the loading portion. A target is mounted to the engaging portion. A sputtering space is defined between the loading portion and the engaging portion. A reference line extends through the loading portion, the sputtering space, and the engaging portion in sequence. A guiding coil surrounds the sputtering space with the reference line located in the center. A magnetron device is located at a side of the sputtering chamber adjacent to the engaging portion. The magnetron device has a magnetization side facing the engaging portion.

Abstract translation: 磁控管等离子体溅射装置包括具有装载部分和与装载部分相对的接合部分的溅射室。 衬底安装到装载部分。 目标被安装到接合部分。 在装载部分和接合部分之间限定溅射空间。 参考线依次延伸穿过装载部分，溅射空间和接合部分。 引导线圈围绕溅射空间，参考线位于中心。 磁控管装置位于与接合部分相邻的溅射室的一侧。 磁控管装置具有面向接合部分的磁化侧。

公开(公告)号：US20090314631A1

公开(公告)日：2009-12-24

申请号：US12486797

申请日：2009-06-18

Applicant: Mark A. Bernick ,  Richard Newcomb

Inventor： Mark A. Bernick ,  Richard Newcomb

IPC: C23C14/35

CPC classification number: C23C14/35 ,  H01J37/3405 ,  H01J37/3452 ,  H01J37/3458

Abstract: A magnet assembly for a magnetron sputtering device having circular, linear or other types of planar targets including two permanent magnets and an electromagnet, e.g., electromagnetic coil between the permanent magnets associated with a sputtering target of a target assembly. An electrical control circuit is arranged to selectively adjust at least the current level and the direction of current to the electromagnet to alter the magnetic fields of the magnet assembly thereby encompassing the entire portions of the sputtering target, including the extreme inner and outer portions of the sputtering target to optimize the target uniformity and the sputtered film uniformity on a substrate. Methods for operating the magnet assembly of the magnetron sputtering devices, for optimizing the target utilization and sputtered film uniformity on a substrate, and for operating the magnetron sputtering process in a reactive gas environment to form an insulating or dielectric thin film are also provided.

Abstract translation: 一种用于磁控溅射装置的磁体组件，其具有圆形，线性或其它类型的平面靶，包括两个永磁体和电磁体，例如在与目标组件的溅射靶相关联的永磁体之间的电磁线圈。 电气控制电路布置成至少选择性地调节电流至电磁体的电流的方向，以改变磁体组件的磁场，从而包括溅射靶的整个部分，包括溅射靶的极端内部和外部 溅射靶以优化目标均匀性和基板上的溅射膜均匀性。 还提供了用于操作磁控溅射装置的磁体组件的方法，用于优化目标利用率和基板上的溅射膜均匀性，以及用于在反应气体环境中操作磁控溅射工艺以形成绝缘或电介质薄膜。