公开(公告)号：US20130119555A1

公开(公告)日：2013-05-16

申请号：US13582453

申请日：2011-03-03

申请人： Venkatesh Sundaram ,  Fuhan Liu ,  Rao R. Tummala ,  Vijay Sukumaran ,  Vivek Sridharan ,  Qiao Chen

发明人： Venkatesh Sundaram ,  Fuhan Liu ,  Rao R. Tummala ,  Vijay Sukumaran ,  Vivek Sridharan ,  Qiao Chen

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/562 ,  H01L21/486 ,  H01L21/76843 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/01019 ,  H01L2924/15311

摘要： The present invention generally relates to the use of glass as the interposer material with the surface of the interposer and/or the walls of through vias in being coated by a stress relief barrier that provides thermal expansion and contraction stress relief and better metallization capabilities. The present invention discloses ways in that a stress relief barrier can be used to reduce the effects of stress caused by the different CTEs while also, in some applications, acting as an adhesion promoter between the metallization and the interposer. The stress relief barrier acts to absorb some of the stress caused by the different CTEs and promotes better adhesion for the conductive metal layer, thus helping to increase reliability while also providing for smaller designs.

摘要翻译： 本发明一般涉及玻璃作为插入物材料与中间层的表面和/或通孔的壁的应用，其通过提供热膨胀和收缩应力释放以及更好的金属化能力的应力释放屏障来涂覆。 本发明公开了一种应用消除屏障可用于减少不同CTE引起的应力的影响的方法，同时在一些应用中，作为金属化和插入物之间的粘合促进剂。 应力消除屏障用于吸收由不同CTE引起的一些应力，并促进导电金属层的更好的附着力，从而有助于提高可靠性，同时也提供更小的设计。

公开(公告)号：US09275934B2

公开(公告)日：2016-03-01

申请号：US13582453

申请日：2011-03-03

申请人： Venkatesh Sundaram ,  Fuhan Liu ,  Rao Tummala ,  Vijay Sukumaran ,  Vivek Sridharan ,  Qiao Chen

发明人： Venkatesh Sundaram ,  Fuhan Liu ,  Rao Tummala ,  Vijay Sukumaran ,  Vivek Sridharan ,  Qiao Chen

IPC分类号： H01L23/48 ,  H01L21/768 ,  H01L21/48 ,  H01L23/15 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L23/562 ,  H01L21/486 ,  H01L21/76843 ,  H01L23/15 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L2224/16225 ,  H01L2924/01019 ,  H01L2924/15311

摘要： Aspects of the present disclosure generally relate to a microelectronic package including a plurality of through vias having walls in a glass interposer having a top portion and a bottom portion. The microelectric package may also include a stress relief barrier on at least a portion of the top and bottom portions of the glass interposer. The microelectric package may further include a metallization seed layer on at least a portion of the stress relief layer and a conductor on at least a portion of the metallization seed layer. The conductor extends through at least a portion of the plurality of the through vias, forming a plurality of metalized through package vias. At least a portion of the through vias are filled with the stress relief layer or the metallization seed layer.

摘要翻译： 本公开的方面通常涉及包括具有顶部和底部的玻璃插入件中具有壁的多个通孔的微电子封装。 微电子封装还可以在玻璃插入件的顶部和底部的至少一部分上包括应力释放屏障。 微电子封装还可包括在应力消除层的至少一部分上的金属化种子层和金属化种子层的至少一部分上的导体。 导体延伸穿过多个通孔的至少一部分，形成多个金属化的通过封装通孔。 通孔的至少一部分填充有应力消除层或金属化种子层。