摘要:
A reflector includes a multi layer mirror structure configured to reflect radiation at a first wavelength, and one or more additional layers. The absorbance and refractive index at a second wavelength of the multi layer mirror structure and the one or more additional layers, and the thickness of the multi layer mirror structure and the one or more additional layers, are configured such that radiation of the second wavelength which is reflected from a surface of the reflector interferes in a destructive manner with radiation of the second wavelength which is reflected from within the reflector.
摘要:
A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
摘要:
A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
摘要:
A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.
摘要翻译:透射光谱纯度滤光器被配置为透射极紫外辐射。 光谱纯度滤光器包括具有多个孔以便透射极紫外辐射并抑制第二类辐射的透射的滤光器部分。 孔可以通过各向异性蚀刻工艺在诸如硅的载体材料中制成,并且覆盖有诸如Mo金属,Ru金属,TiN或RuO的反射层。 在金属和半导体之间设置有诸如氮化硅Si 3 N 4或二氧化硅SiO 2的扩散阻挡层,以防止金属在升高的温度下扩散和硅化。 扩散阻挡层还可以在半导体的不在反射层下面的部分上用作耐氢层,和/或增加用于从结构去除热量的发射率。
摘要:
A spectral purity filter includes a plurality of apertures extending through a member. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation, A first region of the spectral purity filter has a first configuration that results in a first radiation transmission profile for the radiation having the first wavelength and the radiation having the second wavelength, and a second region of the spectral purity filter has a second, different configuration that results in a second, different radiation transmission profile for the radiation having the first wavelength and the radiation having the second wavelength.
摘要:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.
摘要:
A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.
摘要:
A spectral purity filter includes a body of material, through which a plurality of apertures extend. The apertures are arranged to suppress radiation having a first wavelength and to allow at least a portion of radiation having a second wavelength to be transmitted through the apertures. The second wavelength of radiation is shorter than the first wavelength of radiation. The body of material is formed from a material having a bulk reflectance of substantially greater than or equal to 70% at the first wavelength of radiation. The material has a melting point above 1000° C.
摘要:
An optical element includes a first layer that includes a first material, and is configured to be substantially reflective for radiation of a first wavelength and substantially transparent for radiation of a second wavelength. The optical element includes a second layer that includes a second material, and is configured to be substantially absorptive or transparent for the radiation of the second wavelength. The optical element includes a third layer that includes a third material between the first layer and the second layer, and is substantially transparent for the radiation of the second wavelength and configured to reduce reflection of the radiation of the second wavelength from a top surface of the second layer facing the first layer. The first layer is located upstream in the optical path of incoming radiation with respect to the second layer in order to improve spectral purity of the radiation of the first wavelength.
摘要:
A spectral purity filter is configured to allow transmission therethrough of extreme ultraviolet (EUV) radiation and to refract or reflect non-EUV secondary radiation. The spectral purity filter may be part of a source module and/or a lithographic apparatus.