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    High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission
    1.
    发明授权
    High-current avalanche-tunneling and injection-tunneling semiconductor-dielectric-metal stable cold emitter, which emulates the negative electron affinity mechanism of emission 失效
    高电流雪崩隧道和注入隧道半导体 - 电介质 - 金属稳定的冷发射体，其模拟发射的负电子亲和机制

    公开(公告)号：US06847045B2

    公开(公告)日：2005-01-25

    申请号：US09975297

    申请日：2001-10-12

    申请人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

    发明人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

    IPC分类号： H01J1/308 ,  H01J1/312 ,  H01L29/06 ,  H01L29/12

    CPC分类号： B82Y10/00 ,  H01J1/308 ,  H01J1/312

    摘要： A cold electron emitter may include a heavily a p-doped semiconductor, and dielectric layer, and a metallic layer (p-D-M structure). A modification of this structure includes a heavily n+ doped region below the p region (n+-p-D-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible since under certain voltage drop across the dielectric layer, effective negative electron affinity is realized for the quasi-equilibrium “cold” electrons accumulated in the depletion layer in the p-region next to the dielectric layer. These electrons are generated as a result of the avalanche in the p-D-M structure or injection processes in the n+-p-D-M structure. These emitters are stable since they make use of relatively low extracting field in the vacuum region and are not affected by contamination and absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

    摘要翻译： 冷电子发射器可以包括大量p掺杂的半导体和介电层，以及金属层（p-D-M结构）。 该结构的修改包括p区下面的n +掺杂区域（n + -p-D-M结构）。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为在电介质层两端的某些电压降下，实现了与介质层相邻的p区中累积在耗尽层中的准平衡“冷”电子的有效负电子亲和力。 这些电子是由于p-D-M结构中的雪崩或n + -p-D-M结构中的注入过程而产生的。 这些发射体是稳定的，因为它们在真空区域中使用相对低的提取场，并且不受加速离子的污染和吸收的影响。 此外，结构可以用当前最先进的技术制造。

    Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base
    2.
    发明授权
    Injection cold emitter with negative electron affinity based on wide-gap semiconductor structure with controlling base 失效
    基于具有控制基极的宽间隙半导体结构的具有负电子亲和力的注入冷发射体

    公开(公告)号：US06577058B2

    公开(公告)日：2003-06-10

    申请号：US09974818

    申请日：2001-10-12

    申请人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

    发明人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski ,  Henryk Birecki

    IPC分类号： H01L2912

    CPC分类号： H01J1/308

    摘要： A cold electron emitter may include a heavily n+ doped wide band gap (WBG) substrate, a p-doped WBG region, and a low work function metallic layer (n+-p-M structure). A modification of this structure includes heavily p+ doped region between p region and M metallic layer (n+-p-p+-M structure). These structures make it possible to combine high current emission with stable (durable) operation. The high current density is possible because the p-doped (or p+ heavily doped) WBG region acts as a negative electron affinity material when in contact with low work function metals. The injection emitters with the n+-p-M and n+-p-p+-M structures are stable since the emitters make use of relatively low extracting electric field and are not affected by contamination and/or absorption from accelerated ions. In addition, the structures may be fabricated with current state-of-the-art technology.

    摘要翻译： 冷电子发射器可以包括重n +掺杂宽带隙（WBG）衬底，p掺杂WBG区和低功函数金属层（n + -p-M结构）。 该结构的修改包括p区和M金属层（n + -p-p + -M结构）之间的重p +掺杂区。 这些结构使得可以将高电流发射与稳定（耐用）操作相结合。 高电流密度是可能的，因为当与低功函数金属接触时，p掺杂（或p +重掺杂）WBG区域充当负电子亲和材料。 具有n + -p-M和n + -p-p + -M结构的注入发射体是稳定的，因为发射体使用相对低的提取电场，并且不受来自加速离子的污染和/或吸收的影响。 此外，结构可以用当前最先进的技术制造。

    Magnetic sensor based on efficient spin injection into semiconductors
    3.
    发明授权
    Magnetic sensor based on efficient spin injection into semiconductors 失效

    公开(公告)号：US06809388B2

    公开(公告)日：2004-10-26

    申请号：US10284360

    申请日：2002-10-31

    申请人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski

    发明人： Viatcheslav V. Ossipov ,  Alexandre M. Bratkovski

    IPC分类号： H01L2976

    CPC分类号： G01R33/06 ,  Y10T428/32

    摘要： A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5%). A spin injection device with a semiconductor layer sandwiched between &dgr;-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.

    APPARATUS FOR PERFORMING A SENSING APPLICATION
    7.
    发明申请
    APPARATUS FOR PERFORMING A SENSING APPLICATION 有权
    执行感应应用的装置

    公开(公告)号：US20150116706A1

    公开(公告)日：2015-04-30

    申请号：US14394287

    申请日：2012-04-24

    申请人： Steven Barcelo ,  Zhiyong Li ,  Alexandre M. Bratkovski ,  Ansoon Kim

    发明人： Steven Barcelo ,  Zhiyong Li ,  Alexandre M. Bratkovski ,  Ansoon Kim

    IPC分类号： G01N21/65

    CPC分类号： G01N21/658 ,  B82Y15/00 ,  G01N2201/06113 ,  Y10S977/954

    摘要： An apparatus for performing a sensing application includes a reservoir to contain a solution, a dispenser to dispense the solution from the reservoir, and a substrate having a plurality of nano-fingers positioned to receive the dispensed solution, in which the plurality of nano-fingers are flexible, such that the plurality of nano-fingers are configurable with respect to each other. The apparatus also includes an illumination source to illuminate the received solution, an analyte introduced around the plurality of nano-fingers, and the plurality of nano-fingers, in which light is to be emitted from the analyte in response to being illuminated. The apparatus further includes a detector to detect the light emitted from the analyte.

    摘要翻译： 用于执行感测应用的装置包括容纳溶液的储存器，用于从储存器分配溶液的分配器以及具有多个纳米手指的基板，该多个纳米手指定位成接收分配的溶液，其中多个纳米手指 是柔性的，使得多个纳米手指可相对于彼此配置。 所述装置还包括照亮所接收的溶液的照明源，围绕所述多个纳米手指引入的分析物和所述多个纳米手指，其中光将响应于被照亮从分析物发射。 该装置还包括检测器，用于检测从分析物发射的光。

    Electrically driven devices for surface enhanced raman spectroscopy
    10.
    发明授权
    Electrically driven devices for surface enhanced raman spectroscopy 有权
    用于表面增强拉曼光谱的电驱动装置

    公开(公告)号：US08559003B2

    公开(公告)日：2013-10-15

    申请号：US13384456

    申请日：2009-09-17

    申请人： Huei Pei Kuo ,  Shih-Yuan Wang ,  Min Hu ,  Zhiyong Li ,  Alexandre M. Bratkovski

    发明人： Huei Pei Kuo ,  Shih-Yuan Wang ,  Min Hu ,  Zhiyong Li ,  Alexandre M. Bratkovski

    IPC分类号： G01J3/44

    CPC分类号： G01N21/658 ,  B82Y15/00 ,  B82Y30/00

    摘要： An electrically driven device for surface enhanced Raman spectroscopy includes a first electrode, a substrate positioned proximate to the first electrode, a plurality of cone shaped protrusions formed integrally with or on a substrate surface, a Raman signal-enhancing material coated on each protrusion, and a second electrode positioned relative to the first electrode at a predetermined distance. Each of the protrusions has a tip with a radius of curvature ranging from about 0.1 nm to about 100 nm. The second electrode is positioned relative to the first electrode such that the electrodes together produce an electric field when a voltage bias is applied therebetween. The electric field has a field distribution that creates a stronger field gradient at a region proximate to the tips than at other portions of the substrate.

    摘要翻译： 用于表面增强拉曼光谱的电驱动装置包括第一电极，靠近第一电极定位的基板，与基底表面一体地形成的多个锥形突起，涂覆在每个突起上的拉曼信号增强材料，以及 相对于第一电极以预定距离定位的第二电极。 每个突起具有具有约0.1nm至约100nm范围的曲率半径的尖端。 第二电极相对于第一电极定位，使得当在其之间施加电压偏置时，电极一起产生电场。 电场具有场分布，其在靠近尖端的区域处产生比在衬底的其它部分更强的场梯度。