公开(公告)号：US20120080794A1

公开(公告)日：2012-04-05

申请号：US13257346

申请日：2010-03-18

申请人： Victor Sidorov ,  Rimma Zhytnytska ,  Joachim Wuerfl

发明人： Victor Sidorov ,  Rimma Zhytnytska ,  Joachim Wuerfl

IPC分类号： H01L23/532 ,  H01L21/768

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), characterized in that the barrier layer (30) and the metallization (40) are applied by means of physical separation and that the metallization (40) is designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.

摘要翻译： 本发明涉及一种用于至少一个接触焊盘和具有用于至少一个接触焊盘的金属化的半导体晶片的金属化的方法。 本发明涉及一种金属化（以及具有相应的金属化的半导体晶片）及其制造方法，其首先可以通过物理气相分离（干式分离）来制造，其次确保了大量凸块的充分粘附 。 根据本发明的用于制造用于至少一个接触焊盘（20）的金属化（40）的方法包括以下工艺步骤：将至少一个接触焊盘（20）施加到衬底（10）上，施加阻挡层（30） ）到所述至少一个接触焊盘（20）的顶侧并且将金属化（40）施加到所述阻挡层（30）的顶侧，其特征在于，所述阻挡层（30）和所述金属化层（40）是 通过物理分离施加金属化（40）被设计为具有两个多个交替金属化层（41,42）的层结构，其中第一金属化层（41）由镍或具有层 小于500nm的厚度和第二金属化层（42）由不同于镍的材料制成并且是导电的。

公开(公告)号：US08648466B2

公开(公告)日：2014-02-11

申请号：US13257346

申请日：2010-03-18

申请人： Victor Sidorov ,  Rimma Zhytnytska ,  Joachim Wuerfl

发明人： Victor Sidorov ,  Rimma Zhytnytska ,  Joachim Wuerfl

IPC分类号： H01L23/48

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/12 ,  H01L2224/03 ,  H01L2224/0401 ,  H01L2224/05007 ,  H01L2224/05556 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0566 ,  H01L2224/05669 ,  H01L2224/11472 ,  H01L2224/11901 ,  H01L2224/16 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a method for producing a metallization for at least one contact pad and a semiconductor wafer having metallization for at least one contact pad. The invention relates to a metallization (and a semiconductor wafer having corresponding metallization) and to a method for the production thereof that first of all can be produced by means of physical gas phase separation (dry separation) and secondly ensures sufficient adhesion of a lot bump. The method for producing a metallization (40) for at least one contact pad (20) according to the invention comprises the following process steps: applying at least one contact pad (20) to a substrate (10), applying a barrier layer (30) to the top side of the at least one contact pad (20) and applying a metallization (40) to the top side of the barrier layer (30), characterized in that the barrier layer (30) and the metallization (40) are applied by means of physical separation and that the metallization (40) is designed as a layer structure having two multiple alternating metallization layers (41, 42), wherein the first metallization layer (41) is made of nickel or an Ni alloy having a layer thickness of less than 500 nm and the second metallization layer (42) is made of a material that is different than nickel and is electrically conductive.

摘要翻译： 本发明涉及一种用于至少一个接触焊盘和具有用于至少一个接触焊盘的金属化的半导体晶片的金属化的方法。 本发明涉及一种金属化（以及具有相应的金属化的半导体晶片）及其制造方法，其首先可以通过物理气相分离（干式分离）来制造，其次确保了大量凸块的充分粘附 。 根据本发明的用于制造用于至少一个接触焊盘（20）的金属化（40）的方法包括以下工艺步骤：将至少一个接触焊盘（20）施加到衬底（10）上，施加阻挡层（30） ）到所述至少一个接触焊盘（20）的顶侧并且将金属化（40）施加到所述阻挡层（30）的顶侧，其特征在于，所述阻挡层（30）和所述金属化层（40）是 通过物理分离施加金属化（40）被设计为具有两个多个交替金属化层（41,42）的层结构，其中第一金属化层（41）由镍或具有层 小于500nm的厚度和第二金属化层（42）由不同于镍的材料制成并且是导电的。

公开(公告)号：US20130240894A1

公开(公告)日：2013-09-19

申请号：US13418833

申请日：2012-03-13

申请人： Hans Joachim Würfl ,  Eldad Bahat-Treidel ,  Chia-Ta Chang ,  Oliver Hilt ,  Rimma Zhytnytska

发明人： Hans Joachim Würfl ,  Eldad Bahat-Treidel ,  Chia-Ta Chang ,  Oliver Hilt ,  Rimma Zhytnytska

IPC分类号： H01L29/20 ,  H01L21/335 ,  H01L29/78

CPC分类号： H01L29/1075 ,  H01L27/027 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787

摘要： An overvoltage protection device for compound semiconductor field effect transistors includes an implanted region disposed in a compound semiconductor material. The implanted region has spatially distributed trap states which cause the implanted region to become electrically conductive at a threshold voltage. A first contact is connected to the implanted region. A second contact spaced apart from the first contact is also connected to the implanted region. The distance between the first and second contacts partly determines the threshold voltage of the overvoltage protection device.

摘要翻译： 用于化合物半导体场效应晶体管的过电压保护装置包括设置在化合物半导体材料中的注入区域。 植入区域具有空间分布的陷阱状态，其导致注入区域在阈值电压下变得导电。 第一触点连接到植入区域。 与第一接触件间隔开的第二接触件也连接到植入区域。 第一和第二触点之间的距离部分地确定过电压保护装置的阈值电压。