公开(公告)号：US08084105B2

公开(公告)日：2011-12-27

申请号：US11765257

申请日：2007-06-19

申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/342 ,  C23C16/45523

摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

公开(公告)号：US07790635B2

公开(公告)日：2010-09-07

申请号：US11610991

申请日：2006-12-14

申请人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/02167 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

摘要： A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.

摘要翻译： 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。

公开(公告)号：US20080146007A1

公开(公告)日：2008-06-19

申请号：US11610991

申请日：2006-12-14

申请人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Victor T. Nguyen ,  Li-Qun Xia ,  Vladimir Zubkov ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H01L21/20

CPC分类号： H01L21/02167 ,  H01L21/0206 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/3148 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/7843

摘要： A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about −0.1 GPa and about −10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.

摘要翻译： 提供了形成压应力碳掺杂氮化硅层的方法。 该方法包括在其上形成起始层和本体层，其中本体层的压应力在约-0.1GPa和约-10GPa之间。 起始层由包含硅和含碳前体以及任选的氮和/或源的气体混合物沉积，但不包括氢气。 本体层由包含硅和碳的前体，氮源和氢气的气体混合物沉积。 引发层是允许体层的压应力通过其传递到诸如晶体管的通道的下层的薄层。

公开(公告)号：US20080292798A1

公开(公告)日：2008-11-27

申请号：US11765257

申请日：2007-06-19

申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'saad

IPC分类号： B05D3/04

CPC分类号： C23C16/342 ,  C23C16/45523

摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

公开(公告)号：US20110315992A1

公开(公告)日：2011-12-29

申请号：US12824095

申请日：2010-06-25

申请人： Victor T. Nguyen ,  Li-Qun Xia ,  Mihaela Balseanu ,  Derek R. Witty

发明人： Victor T. Nguyen ,  Li-Qun Xia ,  Mihaela Balseanu ,  Derek R. Witty

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/045

摘要： In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes. In a subsequent treatment stage, the deposited crystalline germanium layer is treated by exposing the crystalline germanium layer to an energized treatment gas or by annealing the layer.

摘要翻译： 在将晶体锗层沉积在衬底上的方法中，将衬底放置在包含一对工艺电极的工艺区中。 在沉积阶段，通过将包含含锗气体的沉积气体引入工艺区域中，将结晶锗层沉积在衬底上，以及通过将能量耦合到工艺电极而形成沉积气体的电容耦合等离子体。 在随后的处理阶段中，通过将结晶锗层暴露于通电处理气体或通过退火该层来处理沉积的结晶锗层。

公开(公告)号：US07407896B2

公开(公告)日：2008-08-05

申请号：US11113624

申请日：2005-04-25

申请人： Luca Dal Negro ,  Jae Hyung Yi ,  Jurgen Michel ,  Yasha Yi ,  Victor T. Nguyen ,  Lionel C. Kimerling

发明人： Luca Dal Negro ,  Jae Hyung Yi ,  Jurgen Michel ,  Yasha Yi ,  Victor T. Nguyen ,  Lionel C. Kimerling

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01S3/0627 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/1225 ,  H01L21/3144 ,  H01L33/46 ,  H01S3/0604 ,  H01S3/0632 ,  H01S3/0637 ,  H01S3/083 ,  H01S3/0933 ,  H01S3/0941 ,  H01S3/16 ,  H01S3/1603 ,  H01S3/1628 ,  H01S3/169 ,  H01S5/105 ,  H01S5/183

摘要： A fabrication method and materials produce high quality aperiodic photonic structures. Light emission can be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. From these aperiodic structures, that can be obtained in different vertical and planar device geometries, the presence of aperiodic order in a photonic device provides strong group velocity reduction (slow photons), enhanced light-matter interaction, light emission enhancement, gain enhancement, and/or nonlinear optical properties enhancement.

摘要翻译： 制造方法和材料产生高质量的非周期光子结构。 当使用SiO 2和SiN x 3或富Si氧化物的薄膜层时，可以通过生长后处理进行热退火来激发发光。 从这些非周期结构可以在不同的垂直和平面器件几何形状中获得，光子器件中非周期性顺序的存在提供了强的组速度降低（慢光子），增强的光物质相互作用，光发射增强，增益增强和 /或非线性光学性能增强。