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    Thin film photovoltaic cell
    2.
    发明申请
    Thin film photovoltaic cell 审中-公开
    薄膜光伏电池

    公开(公告)号：US20110232758A1

    公开(公告)日：2011-09-29

    申请号：US12731748

    申请日：2010-03-25

    申请人： Garo Khanarian ,  Nicola Pugliano ,  Charles R. Szmanda ,  Jae Hyung Yi

    发明人： Garo Khanarian ,  Nicola Pugliano ,  Charles R. Szmanda ,  Jae Hyung Yi

    IPC分类号： H01L31/0256 ,  H01L31/00 ,  H01L31/18

    CPC分类号： H01L31/0322 ,  H01L31/02167 ,  H01L31/0336 ,  Y02E10/541 ,  Y02P70/521

    摘要： A thin film photovoltaic cell is provided having a substrate; a back contact provided on the substrate; a p-type semiconductor absorber layer provided on the back contact; a n-type semiconductor layer provided on the p-type semiconductor absorber layer; a dielectric organic material layer provided on the n-type semiconductor layer; a transparent conductive film provided on the dielectric organic material layer; and, optionally, an antireflective layer provided on the transparent conductive film. Also provided is a method of manufacturing a thin film photovoltaic cell.

    摘要翻译： 提供具有基板的薄膜光伏电池; 设置在基板上的背面接触; 设置在背面触点上的p型半导体吸收层; 设置在p型半导体吸收体层上的n型半导体层; 设置在n型半导体层上的介电有机材料层; 设置在所述介电有机材料层上的透明导电膜; 以及可选地，设置在透明导电膜上的抗反射层。 还提供了制造薄膜光伏电池的方法。

    Light emission from silicon-based nanocrystals by sequential thermal annealing approaches
    3.
    发明申请
    Light emission from silicon-based nanocrystals by sequential thermal annealing approaches 审中-公开
    通过连续热退火方法从硅基纳米晶体发射光

    公开(公告)号：US20080139004A1

    公开(公告)日：2008-06-12

    申请号：US11637405

    申请日：2006-12-12

    申请人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    发明人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    IPC分类号： H01L21/64

    CPC分类号： H05B33/10

    摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.

    摘要翻译： 一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。 在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。 第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。

    Method for fabricating GaN substrate
    4.
    发明授权
    Method for fabricating GaN substrate 有权
    制造GaN衬底的方法

    公开(公告)号：US06211089B1

    公开(公告)日：2001-04-03

    申请号：US09400294

    申请日：1999-09-21

    申请人： Chin Kyo Kim ,  Jae Hyung Yi

    发明人： Chin Kyo Kim ,  Jae Hyung Yi

    IPC分类号： H01L21302

    CPC分类号： H01L21/02008 ,  H01L21/30621 ,  H01L21/3245

    摘要： Disclosed is a method for fabricating a smoothly surfaced GaN substrate. A GaN substrate is polished with diamond slurries and then, with boron carbide plates. The irreversible damaged layer which is caused by the mechanical polishing is removed by reactive ion etching, after which the GaN substrate is thermally treated to revive the recoverable damaged layer which is owed to the reactive ion etching. The resulting GaN substrate has a sufficiently smooth surface to allow subsequent thin films of high quality to grow thereon. Based on the GaN substrate of the present invention, blue light elements with excellent properties can be fabricated.

    摘要翻译： 公开了一种用于制造平滑表面的GaN衬底的方法。 用金刚石浆料抛光GaN衬底，然后用碳化硼板抛光。 通过反应离子蚀刻除去由机械抛光引起的不可逆损伤层，然后对GaN衬底进行热处理以恢复可归因于反应离子蚀刻的可恢复损伤层。 所得的GaN衬底具有足够光滑的表面，以允许后续的高质量薄膜在其上生长。 基于本发明的GaN衬底，可以制造具有优异性能的蓝光元件。

    Energy coupled superlattice structures for silicon based lasers and modulators
    5.
    发明授权
    Energy coupled superlattice structures for silicon based lasers and modulators 有权
    用于硅基激光器和调制器的能量耦合超晶格结构

    公开(公告)号：US07738756B2

    公开(公告)日：2010-06-15

    申请号：US11490961

    申请日：2006-07-21

    申请人： Luca Dal Negro ,  Jae Hyung Yi ,  Lionel C. Kimerling

    发明人： Luca Dal Negro ,  Jae Hyung Yi ,  Lionel C. Kimerling

    IPC分类号： G02B6/10

    CPC分类号： H01S3/0632 ,  G02B6/12004 ,  H01S3/0637 ,  H01S3/1603 ,  H01S3/1608 ,  H01S3/1628 ,  H01S3/17

    摘要： A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.

    摘要翻译： 波导结构包括SOI衬底。 在包括多个具有富Si氧化物（SRO），富Si的氮化物（SRN）或富Si氧氮化物（SRON）的交替或非周期分布的薄层的多层的SOI衬底上形成芯结构。 多层掺杂有稀土材料，以将波导结构的发射范围扩展到近红外区域。 低折射率包层包括用作电极的导电氧化物。

    Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches
    6.
    发明申请
    Light Emission From Silicon-Based Nanocrystals By Sequential Thermal Annealing Approaches 审中-公开
    通过顺序热退火方法从硅基纳米晶体的光发射

    公开(公告)号：US20090093074A1

    公开(公告)日：2009-04-09

    申请号：US12137224

    申请日：2008-06-11

    申请人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    发明人： Jae Hyung Yi ,  Luca Dal Negro ,  Lionel C. Kimerling

    IPC分类号： H01L21/28

    CPC分类号： H05B33/10 ,  B82Y30/00 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method for enhancing photoluminescence includes providing a film disposed over a substrate, the film including at least one of a semiconductor and a dielectric material. Light emission may be activated by thermal annealing post growth treatments when thin film layers of SiO2 and SiNx or Si-rich oxide are used. A first annealing step is performed at a first temperature in a processing chamber or annealing furnace; and, thereafter, a second annealing step is performed at a second temperature in the processing chamber or annealing furnace. The second temperature is greater than the first temperature, and the photoluminescence of the film after the second annealing step is greater than the photoluminescence of the film without the first annealing step.

    摘要翻译： 一种用于增强光致发光的方法包括提供设置在衬底上的膜，所述膜包括半导体和电介质材料中的至少一种。 当使用SiO 2和SiN x或富Si氧化物的薄膜层时，可以通过生长后处理热退火来激发发光。 在处理室或退火炉中的第一温度下进行第一退火步骤; 之后，在处理室或退火炉中，在第二温度下进行第二退火工序。 第二温度大于第一温度，第二退火步骤后的膜的光致发光比没有第一退火步骤的膜的光致发光大。