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    Surveillance devices with multiple capacitors
    9.
    发明授权
    Surveillance devices with multiple capacitors 有权
    具有多个电容器的监控设备

    公开(公告)号：US08912890B2

    公开(公告)日：2014-12-16

    申请号：US13632745

    申请日：2012-10-01

    申请人： Patrick Smith ,  Criswell Choi ,  James Montague Cleeves ,  Vivek Subramanian ,  Arvind Kamath ,  Steven Molesa

    发明人： Patrick Smith ,  Criswell Choi ,  James Montague Cleeves ,  Vivek Subramanian ,  Arvind Kamath ,  Steven Molesa

    IPC分类号： H04Q5/22

    CPC分类号： H01G4/40 ,  H01G4/38

    摘要： The disclosure relates to surveillance and/or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.

    摘要翻译： 本公开涉及具有并联或串联连接的电容器的监视和/或识别装置以及制造和使用这些装置的方法。 具有并联连接电容器的器件，其中一个电容器用相对较厚的电容器电介质制造，另一个电容器由相对薄的电容器电介质制成，实现了高精度电容和低击穿电压，以便相对容易的监视标签去激活。 具有串联连接的电容器的装置增加了小电容器的横向尺寸。 这使得使用可能具有相对有限的分辨能力的技术来制造电容器更容易。

    Methods of making metal silicide contacts, interconnects, and/or seed layers
    10.
    发明授权
    Methods of making metal silicide contacts, interconnects, and/or seed layers 有权
    制造金属硅化物接触，互连和/或种子层的方法

    公开(公告)号：US08158518B2

    公开(公告)日：2012-04-17

    申请号：US12175450

    申请日：2008-07-17

    申请人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

    发明人： Aditi Chandra ,  Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Mao Takashima ,  Erik Scher

    IPC分类号： H01L21/44

    CPC分类号： H01L21/288 ,  H01L21/28518 ,  H01L21/32051 ,  H01L21/32053 ,  H01L21/76838 ,  H01L21/76873 ,  H01L21/76895 ,  H01L27/1285 ,  H01L27/1292 ,  H01L29/458 ,  H01L29/78618 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Methods of forming contacts (and optionally, local interconnects) using an ink comprising a silicide-forming metal, electrical devices such as diodes and/or transistors including such contacts and (optional) local interconnects, and methods for forming such devices are disclosed. The method of forming contacts includes depositing an ink of a silicide-forming metal onto an exposed silicon surface, drying the ink to form a silicide-forming metal precursor, and heating the silicide-forming metal precursor and the silicon surface to form a metal silicide contact. Optionally, the metal precursor ink may be selectively deposited onto a dielectric layer adjacent to the exposed silicon surface to form a metal-containing interconnect. Furthermore, one or more bulk conductive metal(s) may be deposited on remaining metal precursor ink and/or the dielectric layer. Electrical devices, such as diodes and transistors may be made using such printed contact and/or local interconnects. A metal ink may be printed for contacts as well as for local interconnects at the same time, or in the alternative, the printed metal can act as a seed for electroless deposition of other metals if different metals are desired for the contact and the interconnect lines. This approach advantageously reduces the number of processing steps and does not necessarily require any etching.

    摘要翻译： 公开了使用包含硅化物形成金属的油墨形成触点（和任选的局部互连）的方法，诸如二极管和/或包括这种触点的晶体管的电气器件，（可选的）局部互连）以及用于形成这种器件的方法。 形成接触的方法包括将硅化物形成金属的油墨沉积到暴露的硅表面上，干燥油墨以形成形成硅化物的金属前体，以及加热形成硅化物的金属前体和硅表面以形成金属硅化物 联系。 任选地，可以将金属前体油墨选择性地沉积到与暴露的硅表面相邻的电介质层上，以形成含金属互连。 此外，一个或多个体导电金属可以沉积在剩余的金属前体油墨和/或介电层上。 可以使用这种印刷的接触和/或局部互连来制造电子器件，例如二极管和晶体管。 金属墨水可以同时印刷以用于接触以及局部互连，或者替代地，如果需要用于接触和互连线的不同金属，印刷金属可以用作其它金属的无电沉积的种子 。 这种方法有利地减少了处理步骤的数量，并且不一定需要任何蚀刻。