Pattern recognition apparatus
    2.
    发明授权

    公开(公告)号:US3597731A

    公开(公告)日:1971-08-03

    申请号:US3597731D

    申请日:1969-07-28

    CPC classification number: G06K9/522

    Abstract: Described is apparatus, employing a mathematical transform involving addition and differencing only, for recognizing patterns or characters which can be distorted or misaligned with respect to optical-sensing means without any sacrifice in the accuracy of the device. When executed on a digital computer, the mathematical transform utilized in accordance with the invention needs only a fraction of the computation time needed for transforms utilized by prior art devices. At the same time, it is better able to cope with certain distortions that are characteristic of hand-printed letters and digits such as inclination, small rotation and the like.

    Thin film optoelectronic semiconductor device using light coupling
    3.
    发明授权
    Thin film optoelectronic semiconductor device using light coupling 失效
    薄膜光电子半导体器件使用光耦合

    公开(公告)号:US3705309A

    公开(公告)日:1972-12-05

    申请号:US3705309D

    申请日:1971-02-05

    Inventor: BRODY THOMAS P

    CPC classification number: H01L31/00 H01L31/12

    Abstract: An electro-optical switch composed of a film of semiconductor material, such as for example CdS, CdSe, containing suitable dopants and in which a first electro-luminescent region for generating photons of radiation is disposed in one portion of the film and a second photo-conductive region for receiving the photons is disposed in another portion of the film, which film has a thickness of from about 2000 A to about 3 microns, and means being provided for inducing the generation of photons in the first region, optically guiding the photons in the plane of the film to the second region and for receiving the photons in the second region.

    Thin film power fet
    5.
    发明授权
    Thin film power fet 失效
    薄膜电源FET

    公开(公告)号:US3652907A

    公开(公告)日:1972-03-28

    申请号:US3652907D

    申请日:1970-05-05

    CPC classification number: H01L29/00 H01L29/76

    Abstract: This disclosure is concerned with a thin film, power field effect transistor having a power dissipation capability of 80 watts/cm.2. The transistor has a thin film interdigitated source and drain used in conjunction with a thick film source and drain leads. The thick film source and drain leads essentially eliminates negative feedback resulting from a voltage drop in the source and drain.

    Abstract translation: 本公开涉及具有80瓦/ cm 2的功率消耗能力的薄膜功率场效应晶体管。 晶体管具有与厚膜源极和漏极引线结合使用的薄膜交叉的源极和漏极。 厚膜源极和漏极引线基本上消除了源极和漏极中的电压降引起的负反馈。

Patent Agency Ranking