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    Integrated circuit wafers containing links that are electrically programmable without joule-heating melting, and methods of making and programming the same
    1.
    发明授权
    Integrated circuit wafers containing links that are electrically programmable without joule-heating melting, and methods of making and programming the same 失效
    集成电路晶片，其包含可电气可编程而不具有焦耳加热熔化的连接，以及制造和编程的方法

    公开(公告)号：US3898603A

    公开(公告)日：1975-08-05

    申请号：US84616569

    申请日：1969-07-30

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： CRICCHI JAMES R ,  LYTLE WALTER J ,  HERMAN DAVID S

    IPC: H03K19/177 ,  H01H69/02 ,  H01H85/046 ,  H01L21/00 ,  H01L21/82 ,  H01L23/525 ,  H01H85/04

    CPC classification number: H01L23/5256 ,  H01H69/022 ,  H01H85/046 ,  H01L21/00 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: Integrated circuit wafers are provided with links of such nature as to render the wafers electrically programmable without reliance upon joule-heating melting to destroy the links in the desired locations. The joule-heating melting previously used with electrically programmable wafers causes undesired effects such as volatilization, unwanted diffusions, etc. With use of photoengraving and etching techniques, there can be produced upon a wafer, according to this invention, links of novel kind that respond, through a defect-aided electromigration effect, to current densities below those required with the hitherto-known links fusible by joule heating. The novel links are of metal, typically about 0.4 mil wide and 50-1500 Angstroms thick, being used to join permanent connection members on the integrated circuit wafer, with the permanent connection members being on the order of 5000 Angstroms thick.

    Abstract translation: 集成电路晶片设置有这样的链接，使得晶片可以电可编程，而不依赖于焦耳加热熔化以破坏期望位置中的链路。 以前与电可编程晶片一起使用的焦耳加热熔化导致不期望的影响，例如挥发，不期望的扩散等。使用光刻和蚀刻技术，可以在根据本发明的晶片上产生响应的新型链接 通过缺陷辅助的电迁移效应，到当前密度低于通过焦耳加热可熔化的迄今为止已知的连接所需的密度。 新颖的链接是金属的，通常为约0.4密耳宽和50-1500埃厚，用于连接集成电路晶片上的永久连接构件，永久连接构件的厚度约为5000埃。

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