公开(公告)号：US11784155B2

公开(公告)日：2023-10-10

申请号：US17702868

申请日：2022-03-24

Applicant: WOLFSPEED, INC.

Inventor： Sung Chul Joo ,  Jack Powell ,  Donald Farrell ,  Bradley Millon

IPC: H01L23/66 ,  H01L23/00 ,  H01P11/00 ,  H01P3/00

CPC classification number: H01L24/37 ,  H01L23/562 ,  H01L23/66 ,  H01L24/35 ,  H01L24/40 ,  H01L24/84 ,  H01P3/003 ,  H01P11/003 ,  H01L2223/6627 ,  H01L2224/37012 ,  H01L2224/40157 ,  H01L2924/19033 ,  H01L2924/35121

Abstract: A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

公开(公告)号：US11784613B2

公开(公告)日：2023-10-10

申请号：US17213895

申请日：2021-03-26

Applicant: Wolfspeed, Inc.

Inventor： Phil Saint-Erne ,  William Pribble ,  Warren Brakensiek ,  Bradley Millon

IPC: H03F3/187 ,  H03F3/193 ,  H03F3/195 ,  H01L23/31 ,  H01L23/66 ,  H03F3/213 ,  H01L29/20

CPC classification number: H03F3/193 ,  H01L23/31 ,  H01L23/66 ,  H03F3/195 ,  H03F3/213 ,  H01L29/2003

Abstract: Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm2.