公开(公告)号：US20060110685A1

公开(公告)日：2006-05-25

申请号：US11329991

申请日：2006-01-10

申请人： Wai-kin Li ,  Rajeev Malik ,  Joseph Mezzapelle

发明人： Wai-kin Li ,  Rajeev Malik ,  Joseph Mezzapelle

IPC分类号： G03F7/00

CPC分类号： G03F7/091 ,  G03F7/11 ,  Y10S430/151

摘要： A process for prohibiting amino group transport from the top surface of a layered semiconductor wafer to a photoresist layer introduces a thin film oxynitride over the silicon nitride layer using a high temperature step of nitrous oxide (N2O) plus oxygen (O2) at approximately 300° C. for about 50 to 120 seconds. By oxidizing the silicon nitride layer, the roughness resulting from the adverse affects of amino group transport eliminated. Moreover, this high temperature step, non-plasma process can be used with the more advanced 193 nanometer technology, and is not limited to the 248 nanometer technology. A second method for exposing the silicon nitride layer to an oxidizing ambient, prior to the application of antireflective coating, introduces a mixture of N2H2 and oxygen (O2) ash at a temperature greater than or equal to 250° C. for approximately six minutes. This is followed by an O2 plasma clean and/or an Ozone clean, and then the subsequent layering of the ARC and photoresist.

摘要翻译： 用于禁止从层状半导体晶片的顶表面到光致抗蚀剂层的氨基转移的方法使用一氧化二氮（N 2 O 2 O）的高温步骤在氮化硅层上引入薄膜氧氮化物， 在约300℃下加氧气（O 2 H 2）约50至120秒。 通过氧化氮化硅层，消除了由氨基转移的不利影响产生的粗糙度。 此外，这种高温步骤，非等离子体工艺可以采用更先进的193纳米技术，并不限于248纳米技术。 在施加抗反射涂层之前，将氮化硅层暴露于氧化环境的第二种方法是引入N 2 H 2 O 2和氧的混合物（O _{2℃）灰分，温度大于或等于250℃约6分钟。 之后是等离子体清洁和/或臭氧清洁，然后再分层ARC和光致抗蚀剂。}

公开(公告)号：US20070095787A1

公开(公告)日：2007-05-03

申请号：US11163836

申请日：2005-11-01

申请人： Joseph Mezzapelle

发明人： Joseph Mezzapelle

IPC分类号： C03C25/68 ,  H01L21/302 ,  B44C1/22 ,  H01L21/461

CPC分类号： H01L21/31116 ,  H01L21/76802

摘要： Methods of etching a dielectric layer and a cap layer over a conductor to expose the conductor are disclosed. In one embodiment, the methods include the use of a silicon dioxide (SiO2) etching chemistry including octafluorocyclobutane (C4F8) and a titanium nitride (TiN) etching chemistry including tetrafluoro methane (CF4). The methods prevent etch rate degradation and exhibit reduced electro-static discharge (ESD) defects.

摘要翻译： 公开了在导体上蚀刻介电层和盖层以暴露导体的方法。 在一个实施方案中，所述方法包括使用包括八氟环丁烷（C 4 H 8 F 8）的二氧化硅（SiO 2）蚀刻化学品和 包括四氟甲烷（CF 4 SO 4）的氮化钛（TiN）蚀刻化学。 该方法防止蚀刻速率降低并且显示降低的静电放电（ESD）缺陷。

公开(公告)号：US11678010B1

公开(公告)日：2023-06-13

申请号：US17460165

申请日：2021-08-28

申请人： Joseph Mezzapelle

发明人： Joseph Mezzapelle

IPC分类号： H04N21/439 ,  H04N21/43 ,  H04N21/482 ,  H04N21/858 ,  H04N21/8547

CPC分类号： H04N21/4398 ,  H04N21/4302 ,  H04N21/4394 ,  H04N21/4396 ,  H04N21/482 ,  H04N21/8547 ,  H04N21/8586

摘要： A holistic solution for improving the quality of publicly available/published video by providing an improved audio. The owner of the published video or audio content within the published video can upload the improved audio to a network database where it is associated with a video feature in common with the publicly available video. The client consuming the video, can activate a novel application/module/browser extension on a client terminal to detect the video feature of a currently selected video to begin downloading the improved audio. After a significant portion of the audio has been downloaded the invention mutes the audio playback of the video on the client terminal at or about the same time as it begins playback of the audio content so as to minimize distortion from the transition between the original audio and the improved audio. Additional features including audio/video synchronization, selectable audio tracks, visual feedback, and monetization are disclosed.