公开(公告)号：US20060110534A1

公开(公告)日：2006-05-25

申请号：US11281774

申请日：2005-11-17

申请人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

发明人： Wan-Goo Hwang ,  Seung-Ki Chae ,  Young-Kyou Park ,  Jung-Il Ahn ,  Kyoung-Ho Jang ,  Myeong-Jin Kim

IPC分类号： C23C16/00 ,  B05C11/00

CPC分类号： C23C16/34 ,  C23C16/45527 ,  C23C16/45546

摘要： A method of forming titanium nitride layers by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein the titanium nitride layers are formed on one or more substrates in accordance with a reaction between a first source gas including TiCl4 gas and a second source gas including an NH3 gas. After forming the titanium nitride layers, chlorine remaining in the titanium nitride layers is removed using a treatment gas which includes an NH3 gas. The substrates are revolved by a predetermined rotation angle between repeated titanium nitride layer formation cycles. The process of forming the titanium nitride layers and rotating the substrates is alternately repeated resulting in titanium nitride layers having substantially uniform thicknesses and low specific resistance.

摘要翻译： 其中描述了通过使用分批式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中根据包括TiCl 3的第一源气体之间的反应在一个或多个衬底上形成氮化钛层， 4气体和包括NH 3气体的第二源气体。 在形成氮化钛层之后，使用包括NH 3气体的处理气体除去残留在氮化钛层中的氯。 在重复的氮化钛层形成循环之间，基板旋转预定的旋转角度。 交替地重复形成氮化钛层和旋转衬底的过程，导致具有基本均匀的厚度和低电阻率的氮化钛层。

公开(公告)号：US10041172B2

公开(公告)日：2018-08-07

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/44 ,  C23C16/455

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

公开(公告)号：US20160060759A1

公开(公告)日：2016-03-03

申请号：US14835082

申请日：2015-08-25

申请人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

发明人： Ki-Chul Kim ,  Jung-Il Ahn ,  Jung-Hun Seo ,  Jong-Cheol Lee ,  Kyu-Hee Han ,  Seung-Han Lee ,  Jin-Pil Heo

IPC分类号： C23C16/455

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/45551 ,  C23C16/45565

摘要： A gas injection apparatus, which can sequentially supply a substrate with at least two kinds of source gases reacting with each other in a container, and thin film deposition equipment including the gas injection apparatus, are provided. The gas injection apparatus includes a base plate, a first gas supply region protruding from the base plate, a second gas supply region protruding from the base plate and adjacent the first gas supply region, and a trench defined by a sidewall of the first gas supply region and a sidewall of the second gas supply region. The sidewall of the first gas supply region and the sidewall of the second gas supply region face each other and extend in a radial direction on the base plate.

摘要翻译： 一种气体注入装置，其可以在容器中顺序地供给具有彼此反应的至少两种源气体的基板和包括该气体注入装置的薄膜沉积设备。 气体注入装置包括基板，从基板突出的第一气体供应区域，从基板突出并邻近第一气体供应区域的第二气体供应区域和由第一气体供应源的侧壁限定的沟槽 区域和第二气体供应区域的侧壁。 第一气体供给区域的侧壁和第二气体供给区域的侧壁彼此面对并且在基板上沿径向方向延伸。