公开(公告)号：US20120211165A1

公开(公告)日：2012-08-23

申请号：US13502829

申请日：2010-09-29

申请人： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

发明人： Wataru Yoshikawa ,  Kazuki Moyama ,  Nobuyuki Okayama ,  Kenji Sudou ,  Yasuhiro Otsuka

IPC分类号： H01L21/3065 ,  C23C16/50 ,  C23C16/458

CPC分类号： H01L21/68735 ,  H01L21/6875

摘要： A sample table which stably holds a semiconductor wafer by maintaining smoothness of a contact surface via a lapping process and forming the contact surface to have an approximate recess shape, and a microwave plasma processing apparatus including the sample table. The sample table holds a semiconductor wafer on which a plasma process is to be performed, and includes: an adsorption plate that has a contact surface on which a lapping process has been performed and surface-contacting the semiconductor wafer, and that adsorbs the semiconductor wafer; and a supporting substrate which has a recess surface to which a noncontact surface of the adsorption plate is adhered, wherein a difference between a depth of an approximate center portion of the recess surface and a depth of a distant portion spaced apart from the approximate center portion is larger than a difference between a thickness of the adsorption plate at a portion contacting the approximate center portion and a thickness of the adsorption plate at a portion contacting the distant portion. Also, a microwave plasma processing apparatus includes the sample table.

摘要翻译： 一种样品台，其通过经由研磨工艺保持接触表面的平滑度并形成接触表面以使其具有大致的凹陷形状，并且包括样品台的微波等离子体处理装置，稳定地保持半导体晶片。 样品台保持要在其上进行等离子体处理的半导体晶片，并且包括：吸附板，其具有在其上进行研磨工艺并与半导体晶片表面接触的接触表面，并且吸附半导体晶片 ; 以及支撑基板，其具有粘附有吸附板的非接触面的凹部表面，其中，所述凹部表面的大致中心部分的深度与远离所述凹部表面的大致中心部分间隔开的远处的深度之间的差 大于接触大致中心部分的部分的吸附板的厚度与接触远端部分的部分的吸附板的厚度之间的差。 此外，微波等离子体处理装置包括样品台。

公开(公告)号：US20100104751A1

公开(公告)日：2010-04-29

申请号：US12525093

申请日：2008-01-30

申请人： Kenji Sudou

发明人： Kenji Sudou

IPC分类号： C23C16/44 ,  C23C16/00

CPC分类号： C23C14/22 ,  B01B1/005 ,  C23C14/562

摘要： An evaporating apparatus includes: a plurality of vapor deposition sources for respectively vaporizing different film forming materials accommodated therein; a plurality of blowing devices for blowing off film forming materials vaporized from the vapor deposition sources through blowing openings; and one or more partition walls for separating the adjacent blowing devices. The one or more partition walls are installed such that relationships of a gap G between each partition wall and the substrate, a height T from each blowing opening to a top surface of each partition wall, a thickness D of each partition wall and a distance E from a center position of each vapor deposition source to a center position of each partition wall satisfy an inequality of E

摘要翻译： 蒸发装置包括：用于分别蒸发容纳在其中的不同成膜材料的多个气相沉积源; 多个吹送装置，用于吹扫通过吹扫孔从气相沉积源蒸发的成膜材料; 以及用于分离相邻吹风装置的一个或多个分隔壁。 一个或多个分隔壁被安装成使得每个分隔壁和基板之间的间隙G的关系，从每个分隔壁的每个吹开口到顶表面的高度T，每个分隔壁的厚度D和距离E 从每个气相沉积源的中心位置到每个分隔壁的中心位置满足不等式E <（G + T）×D / 2G。 此外，将处理室的内部压力控制在约0.01Pa以下。

公开(公告)号：US08663424B2

公开(公告)日：2014-03-04

申请号：US13115289

申请日：2011-05-25

申请人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

发明人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32807

摘要： There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

摘要翻译： 提供了能够在确保供给气体的同时进行等离子体处理的等离子体处理装置。 等离子体处理装置包括外部气体供给构件，其具有用于供给等离子体处理气体的气体供给开口和构造成在处理室内支撑外部气体供给构件并用作气体供给构件支撑装置的护套。 夹套包括三个支撑构件，其安装成连接外部气体供给构件和侧壁，并且在外部气体供给构件延伸并安装固定到侧壁的方向上以一定距离布置，以便将支撑构件安装在其中 。 支撑构件包括固定到第一安装件的第一支撑构件和可移动地支撑在第二安装件中的第二支撑构件。

公开(公告)号：US20110186226A1

公开(公告)日：2011-08-04

申请号：US13062078

申请日：2009-08-19

申请人： Kenji Sudou ,  Naoki Mihara

发明人： Kenji Sudou ,  Naoki Mihara

IPC分类号： C23F1/08 ,  H05H1/24 ,  B32B37/02 ,  B32B37/14 ,  B32B38/10 ,  F15D1/00

CPC分类号： C23C16/4558 ,  C23C16/505 ,  Y10T137/8593 ,  Y10T156/1062

摘要： A gas supply member includes an annular portion in which a passage for a gas extending to have an annular shape is provided. The annular portion includes a first member having an annular shape and including a flat plate portion in which a plurality of gas supply holes through which a gas is supplied are formed, and a second member having an annular shape and forming a space, which becomes the passage for the gas, between the first member and the second member.

摘要翻译： 气体供给构件包括环形部分，其中设置有延伸成具有环形形状的气体通道。 环形部分包括具有环形形状的第一构件，并且包括平板部分，其中形成有供应气体的多个气体供应孔，以及形成环形并形成空间的第二构件，其形成为 在第一构件和第二构件之间的气体通道。

公开(公告)号：US20110308733A1

公开(公告)日：2011-12-22

申请号：US13115289

申请日：2011-05-25

申请人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

发明人： Naoki Mihara ,  Kenji Sudou ,  Kazuo Murakami ,  Satoshi Furukawa

IPC分类号： C23F1/08 ,  H05H1/24

CPC分类号： H01J37/3244 ,  H01J37/32449 ,  H01J37/32807

摘要： There is provided a plasma processing apparatus capable of performing a plasma process while surely supplying a gas. The plasma processing apparatus includes an outer gas supply member having gas supply openings for supplying a plasma processing gas and a jacket configured to support the outer gas supply member within a processing chamber and serving as a gas supply member supporting device. The jacket includes three supporting members installed so as to connect the outer gas supply member and a sidewall and arranged at a certain distance in a direction in which the outer gas supply member extends and mounts fixed to the sidewall so as to mount the supporting members therein. The supporting members include a first supporting member fixed to a first mount and a second supporting member movably supported in a second mount.

摘要翻译： 提供了能够在确保供给气体的同时进行等离子体处理的等离子体处理装置。 等离子体处理装置包括外部气体供给构件，其具有用于供给等离子体处理气体的气体供给开口和构造成在处理室内支撑外部气体供给构件并用作气体供给构件支撑装置的护套。 夹套包括三个支撑构件，其安装成连接外部气体供给构件和侧壁，并且在外部气体供给构件延伸并安装固定到侧壁的方向上以一定距离布置，以便将支撑构件安装在其中 。 支撑构件包括固定到第一安装件的第一支撑构件和可移动地支撑在第二安装件中的第二支撑构件。

公开(公告)号：US20100092665A1

公开(公告)日：2010-04-15

申请号：US12442973

申请日：2007-09-25

申请人： Kenji Sudou

发明人： Kenji Sudou

IPC分类号： C23C16/52 ,  C23C16/00

CPC分类号： C23C14/24 ,  C23C14/12 ,  C23C14/228 ,  C23C14/544 ,  H01L51/001 ,  H01L51/5036 ,  H01L51/56 ,  H05B33/10

摘要： An evaporating apparatus includes a first processing chamber and a second processing chamber, and a blowing device accommodated in the first processing chamber and a vapor deposition source accommodated in the second processing chamber are connected with each other via a connection pipe. An exhaust mechanism for evacuating the inside of the first processing chamber to a preset vacuum level is connected with the first processing chamber. Organic molecules vaporized from the vapor deposition source are blown out from the blowing device via the connection pipe and is adhered on a substrate, whereby a thin film is formed on the substrate. By installing the first processing chamber and the second processing chamber separately, the first processing chamber is not opened to the atmosphere when a film forming material is replenished, so that exhaust efficiency can be improved.

摘要翻译： 蒸发装置包括第一处理室和第二处理室，容纳在第一处理室中的吹风装置和容纳在第二处理室中的蒸镀源通过连接管彼此连接。 用于将第一处理室的内部排空到预设真空度的排气机构与第一处理室连接。 从气相沉积源蒸发的有机分子经由连接管从吹出装置吹出并粘附在基板上，从而在基板上形成薄膜。 通过分别安装第一处理室和第二处理室，当补充成膜材料时，第一处理室不向大气开放，从而可以提高排气效率。