公开(公告)号：US20080105874A1

公开(公告)日：2008-05-08

申请号：US11935073

申请日：2007-11-05

申请人： Wei WANG ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

发明人： Wei WANG ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

IPC分类号： H01L29/04 ,  H01L21/336

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/41733

摘要： A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.

摘要翻译： 一种薄膜晶体管（TFT），其包括在基板上的栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有源极区，漏极区和沟道区的有源层，以及源极 电极和漏电极，分别形成在有源层的源极区域和漏极区域上，并且相对于沟道区域彼此面对。 源电极和漏电极之间的沟道区域的轮廓在弯曲线中改变。 还提供了一种用于形成TFT的方法。

公开(公告)号：US07829896B2

公开(公告)日：2010-11-09

申请号：US11935073

申请日：2007-11-05

申请人： Wei Wang ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

发明人： Wei Wang ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/41733

摘要： A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.

摘要翻译： 一种薄膜晶体管（TFT），其包括在基板上的栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有源极区，漏极区和沟道区的有源层，以及源极 电极和漏电极，分别形成在有源层的源极区域和漏极区域上，并且相对于沟道区域彼此面对。 源电极和漏电极之间的沟道区域的轮廓在弯曲线中改变。 还提供了一种用于形成TFT的方法。

公开(公告)号：US20080111934A1

公开(公告)日：2008-05-15

申请号：US11938431

申请日：2007-11-12

申请人： Hongjiang Wu ,  Wei Wang ,  Chunping Long ,  Chang Hee Lee

发明人： Hongjiang Wu ,  Wei Wang ,  Chunping Long ,  Chang Hee Lee

IPC分类号： G02F1/133 ,  G02F1/1368 ,  H01L21/77

CPC分类号： H01L27/124 ,  G02F2001/13606 ,  H01L27/1255

摘要： A TFT-LCD array substrate and a method for manufacturing the same. The TFT-LCD array substrate includes a substrate, on which at least one gate line and at least one data line are formed and cross with each other to define sub-pixel regions, one of the sub-pixel regions includes a thin film transistor (TFT) and a pixel electrode, and the TFT is electrically connected to the pixel electrode. The TFT-LCD array substrate further includes a compensating parasitic capacitor structure comprising a first electrode electrically connected to the gate line and a second electrode electrically connected to the pixel electrode.

摘要翻译： TFT-LCD阵列基板及其制造方法。 TFT-LCD阵列基板包括基板，其上形成有至少一个栅极线和至少一条数据线并且彼此交叉以限定子像素区域，其中一个子像素区域包括薄膜晶体管（ TFT）和像素电极，TFT与像素电极电连接。 TFT-LCD阵列基板还包括补偿寄生电容器结构，其包括电连接到栅极线的第一电极和电连接到像素电极的第二电极。

公开(公告)号：US20120009708A1

公开(公告)日：2012-01-12

申请号：US13242468

申请日：2011-09-23

申请人： Xinxin LI ,  Wei Wang ,  Chunping Long

发明人： Xinxin LI ,  Wei Wang ,  Chunping Long

IPC分类号： H01L33/08

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了薄膜晶体管液晶显示器（TFT-LCD）薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源电极，漏电极和源极和漏电极之间的沟道区。 源极延伸区域与源极连接，漏极延伸区域与漏极电极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US08377758B2

公开(公告)日：2013-02-19

申请号：US13242468

申请日：2011-09-23

申请人： Xinxin Li ,  Wei Wang ,  Chunping Long

发明人： Xinxin Li ,  Wei Wang ,  Chunping Long

IPC分类号： H01L21/339 ,  H01L21/44

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了一种用于薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源电极，漏电极和源极和漏电极之间的沟道区。 源极延伸区域与源极连接，漏极延伸区域与漏极电极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US08049216B2

公开(公告)日：2011-11-01

申请号：US12104575

申请日：2008-04-17

申请人： Xinxin Li ,  Wei Wang ,  Chunping Long

发明人： Xinxin Li ,  Wei Wang ,  Chunping Long

IPC分类号： H01L29/04 ,  H01L29/10

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain extension region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了一种用于薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源极，漏极和源极与漏极之间的沟道区域。 源极延伸区域与源极连接，漏极延伸区域与漏极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US20080296575A1

公开(公告)日：2008-12-04

申请号：US12104575

申请日：2008-04-17

申请人： Xinxin Li ,  Wei Wang ,  Chunping Long

发明人： Xinxin Li ,  Wei Wang ,  Chunping Long

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain expanded region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了一种用于薄膜晶体管液晶显示器（TFT-LCD）的薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源极，漏极和源极与漏极之间的沟道区域。 源极延伸区域与源极连接，漏极扩展区域与漏极连接，源极延伸区域与漏极延伸区域相对设置，以在其间形成沟道延伸区域。

公开(公告)号：US07696088B2

公开(公告)日：2010-04-13

申请号：US11958634

申请日：2007-12-18

申请人： Chunping Long ,  Xinxin Li

发明人： Chunping Long ,  Xinxin Li

IPC分类号： H01L21/44

CPC分类号： H01L27/124 ,  Y10S438/951

摘要： A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.

摘要翻译： 一种形成栅极线和栅电极的方法和制造TFT阵列基板的方法。 金属栅极线和栅极可以通过以下方式形成：提供衬底，在衬底上形成光致抗蚀剂层，形成与栅极线和栅电极互补的光致抗蚀剂图案，形成金属Cu薄膜或复合薄膜 在基板上包含金属Cu薄膜的薄膜，以及从基板上去除其上形成有金属Cu薄膜的光刻胶图案和金属Cu薄膜或复合薄膜。

公开(公告)号：US20220246075A2

公开(公告)日：2022-08-04

申请号：US17481376

申请日：2021-09-22

申请人： Jianbo Xian ,  Chunping Long ,  Hui Li ,  Yong Qiao

发明人： Jianbo Xian ,  Chunping Long ,  Hui Li ,  Yong Qiao

IPC分类号： G09G3/20

摘要： The present disclosure relates to a driving unit. The driving unit may include a first driving sub-circuit, a second driving sub-circuit, and a driving control circuit. The first driving sub-circuit may include a plurality of first switching elements, and at least some of the plurality of first switching elements may be configured to output a first signal to a first output terminal of the driving unit in response to a control signal from the driving control circuit. The second driving sub-circuit may include one or more second switching elements, and at least one of the one or more second switching elements may be configured to output a second signal to a second output terminal of the driving unit in response to the control signal from the driving control circuit. The driving control circuit may be configured to output the control signal at a control signal output terminal.

公开(公告)号：US09093030B2

公开(公告)日：2015-07-28

申请号：US13486051

申请日：2012-06-01

申请人： Yinan Liang ,  Zhanjie Ma ,  Chunping Long ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Chunsheng Jiang ,  Zheng Liu

发明人： Yinan Liang ,  Zhanjie Ma ,  Chunping Long ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Chunsheng Jiang ,  Zheng Liu

IPC分类号： G09G5/00 ,  G09G3/32

CPC分类号： G09G3/3283 ,  G09G2310/0248

摘要： The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

摘要翻译： 本发明涉及驱动装置，OLED（有机发光二极管）面板以及驱动OLED面板的方法。 驱动装置可以集成在像素电路的基板上，并且能够提供快速和稳定的电流驱动。 驱动装置包括：切换模块，用于根据所接收的时钟信号选择电压信号; 用于将电压信号转换为电流信号的转换模块; 以及输出模块，用于输出电压信号或转换的电流信号以驱动像素电路阵列，其中切换模块连接到转换模块和输出模块，并且转换模块连接到开关模块和输出模块 。