公开(公告)号：US20220246075A2

公开(公告)日：2022-08-04

申请号：US17481376

申请日：2021-09-22

申请人： Jianbo Xian ,  Chunping Long ,  Hui Li ,  Yong Qiao

发明人： Jianbo Xian ,  Chunping Long ,  Hui Li ,  Yong Qiao

IPC分类号： G09G3/20

摘要： The present disclosure relates to a driving unit. The driving unit may include a first driving sub-circuit, a second driving sub-circuit, and a driving control circuit. The first driving sub-circuit may include a plurality of first switching elements, and at least some of the plurality of first switching elements may be configured to output a first signal to a first output terminal of the driving unit in response to a control signal from the driving control circuit. The second driving sub-circuit may include one or more second switching elements, and at least one of the one or more second switching elements may be configured to output a second signal to a second output terminal of the driving unit in response to the control signal from the driving control circuit. The driving control circuit may be configured to output the control signal at a control signal output terminal.

公开(公告)号：US20120009708A1

公开(公告)日：2012-01-12

申请号：US13242468

申请日：2011-09-23

申请人： Xinxin LI ,  Wei Wang ,  Chunping Long

发明人： Xinxin LI ,  Wei Wang ,  Chunping Long

IPC分类号： H01L33/08

CPC分类号： H01L29/66765 ,  H01L29/41733

摘要： A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source electrode, a drain electrode, and a channel region between the source electrode and drain electrode. A source extension region is connected with the source electrode, a drain extension region is connected with the drain electrode, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween.

摘要翻译： 提供了薄膜晶体管液晶显示器（TFT-LCD）薄膜晶体管，阵列基板及其制造方法。 薄膜晶体管包括源电极，漏电极和源极和漏电极之间的沟道区。 源极延伸区域与源极连接，漏极延伸区域与漏极电极连接，源极延伸区域与漏极延伸区域相对设置，以在它们之间形成沟道延伸区域。

公开(公告)号：US07696088B2

公开(公告)日：2010-04-13

申请号：US11958634

申请日：2007-12-18

申请人： Chunping Long ,  Xinxin Li

发明人： Chunping Long ,  Xinxin Li

IPC分类号： H01L21/44

CPC分类号： H01L27/124 ,  Y10S438/951

摘要： A method of forming a gate line and gate electrode and a method of manufacturing a TFT array substrate. The metal gate line and gate electrode can be formed by: providing a substrate, forming a photoresist layer on the substrate, a photoresist pattern being formed complementary with that of the gate line and gate electrode, forming a metal Cu thin film or a composite thin film comprising a metal Cu thin film on the substrate, and removing the photoresist pattern and the metal Cu thin film or composite thin film comprising the metal Cu thin film formed thereon from the substrate.

摘要翻译： 一种形成栅极线和栅电极的方法和制造TFT阵列基板的方法。 金属栅极线和栅极可以通过以下方式形成：提供衬底，在衬底上形成光致抗蚀剂层，形成与栅极线和栅电极互补的光致抗蚀剂图案，形成金属Cu薄膜或复合薄膜 在基板上包含金属Cu薄膜的薄膜，以及从基板上去除其上形成有金属Cu薄膜的光刻胶图案和金属Cu薄膜或复合薄膜。

公开(公告)号：US09093030B2

公开(公告)日：2015-07-28

申请号：US13486051

申请日：2012-06-01

申请人： Yinan Liang ,  Zhanjie Ma ,  Chunping Long ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Chunsheng Jiang ,  Zheng Liu

发明人： Yinan Liang ,  Zhanjie Ma ,  Chunping Long ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Chunsheng Jiang ,  Zheng Liu

IPC分类号： G09G5/00 ,  G09G3/32

CPC分类号： G09G3/3283 ,  G09G2310/0248

摘要： The present disclosure relates to a driving apparatus, an OLED (Organic Light-Emitting Diode) panel, and a method for driving the OLED panel. The driving apparatus can be integrated on a substrate of pixel circuits and is capable of providing fast and stable current driving. The driving apparatus includes a switching module for selecting a voltage signal according to a received clock signal; a conversion module for converting the voltage signal into a current signal; and an output module for outputting the voltage signal or the converted current signal to drive a pixel circuit array, wherein the switching module is connected to the conversion module and the output module, and the conversion module is connected to the switching module and the output module.

摘要翻译： 本发明涉及驱动装置，OLED（有机发光二极管）面板以及驱动OLED面板的方法。 驱动装置可以集成在像素电路的基板上，并且能够提供快速和稳定的电流驱动。 驱动装置包括：切换模块，用于根据所接收的时钟信号选择电压信号; 用于将电压信号转换为电流信号的转换模块; 以及输出模块，用于输出电压信号或转换的电流信号以驱动像素电路阵列，其中切换模块连接到转换模块和输出模块，并且转换模块连接到开关模块和输出模块 。

公开(公告)号：US08975124B2

公开(公告)日：2015-03-10

申请号：US13471911

申请日：2012-05-15

申请人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

发明人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/00 ,  H01L29/76 ,  H01L31/112 ,  H01L29/786 ,  H01L29/66

CPC分类号： H01L29/78678 ,  H01L29/66765 ,  H01L29/78696

摘要： One or more embodiments of the disclosed technology provide a thin film transistor, an array substrate and a method for preparing the same. The thin film transistor comprises a base substrate, and a gate electrode, a gate insulating layer, an active layer, an ohmic contact layer, a source electrode, a drain electrode and a passivation layer prepared on the base substrate in this order. The active layer is formed of microcrystalline silicon, and the active layer comprises an active layer lower portion and an active layer upper portion, and the active layer lower portion is microcrystalline silicon obtained by using hydrogen plasma to treat at least two layers of amorphous silicon thin film prepared in a layer-by-layer manner.

摘要翻译： 所公开技术的一个或多个实施例提供薄膜晶体管，阵列基板及其制备方法。 薄膜晶体管依次包括在基底基板上制备的基底基板，栅电极，栅极绝缘层，有源层，欧姆接触层，源电极，漏电极和钝化层。 有源层由微晶硅形成，有源层包括有源层下部和有源层上部，有源层下部是通过使用氢等离子体来处理至少两层非晶硅薄膜而获得的微晶硅 电影以逐层方式准备。

公开(公告)号：US20140057419A1

公开(公告)日：2014-02-27

申请号：US13703122

申请日：2012-10-22

申请人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

发明人： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC分类号： H01L21/02

CPC分类号： H01L21/02675 ,  H01L21/02436 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02664 ,  H01L21/02686 ,  H01L21/32115 ,  H01L27/1285

摘要： Embodiments of the present invention provide a method for forming a low temperature polysilicon thin film. The method for forming the low temperature polysilicon thin film can comprise: depositing a buffer layer and an amorphous silicon layer on a substrate in this order; heating the amorphous silicon layer; performing an excimer laser annealing process on the amorphous silicon layer to form a polysilicon layer; oxidizing partially the polysilicon layer so as to form an oxidation portion at an upper portion of the polysilicon layer; and removing the oxidation portion of the polysilicon layer to form a polysilicon thin film.

摘要翻译： 本发明的实施方式提供了形成低温多晶硅薄膜的方法。 形成低温多晶硅薄膜的方法可以包括：依次在衬底上沉积缓冲层和非晶硅层; 加热非晶硅层; 对非晶硅层进行准分子激光退火处理以形成多晶硅层; 部分氧化多晶硅层，以在多晶硅层的上部形成氧化部分; 并去除多晶硅层的氧化部分以形成多晶硅薄膜。

公开(公告)号：US08492183B2

公开(公告)日：2013-07-23

申请号：US12855752

申请日：2010-08-13

申请人： Chunping Long ,  Haoran Gao ,  Jigang Xu

发明人： Chunping Long ,  Haoran Gao ,  Jigang Xu

IPC分类号： H01L21/00

CPC分类号： H01L27/1285 ,  H01L27/1292

摘要： A method of forming a film pattern with micro-pattern and a method of manufacturing a thin film transistor liquid crystal display (TFT-LCD) array substrate are provided. The method of manufacturing the film pattern with micro-pattern comprises: depositing a thin film on a substrate; jetting or dropping etchant on the thin film with a predetermined etching pattern by an inkjet print device; etching the thin film by the etchant; and cleaning the thin film to form a film pattern on the substrate.

摘要翻译： 提供一种形成具有微图案的膜图案的方法和制造薄膜晶体管液晶显示器（TFT-LCD）阵列基板的方法。 具有微图案的膜图案的制造方法包括：在基板上沉积薄膜; 通过喷墨打印装置以预定的蚀刻图案在薄膜上喷射或滴落蚀刻剂; 用蚀刻剂蚀刻薄膜; 并清洗该薄膜以在该基板上形成一薄膜图案。

公开(公告)号：US07829896B2

公开(公告)日：2010-11-09

申请号：US11935073

申请日：2007-11-05

申请人： Wei Wang ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

发明人： Wei Wang ,  Hongjiang Wu ,  Chunping Long ,  Chang Hee Lee

IPC分类号： H01L29/04

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L27/12 ,  H01L27/124 ,  H01L29/41733

摘要： A thin film transistor (TFT) that comprises a gate electrode on a substrate, a gate insulation layer on the gate electrode, an active layer having a source region, a drain region, and a channel region on the gate insulation layer, and a source electrode and a drain electrode formed over the source region and drain region of the active layer respectively and facing each other with respect to the channel region. The profile of channel region between the source electrode and drain electrode is changed in a bend line. A method for forming the TFT is also provided.

摘要翻译： 一种薄膜晶体管（TFT），其包括在基板上的栅电极，栅电极上的栅极绝缘层，在栅极绝缘层上具有源极区，漏极区和沟道区的有源层，以及源极 电极和漏电极，分别形成在有源层的源极区域和漏极区域上，并且相对于沟道区域彼此面对。 源电极和漏电极之间的沟道区域的轮廓在弯曲线中改变。 还提供了一种用于形成TFT的方法。

公开(公告)号：US07531394B2

公开(公告)日：2009-05-12

申请号：US11767600

申请日：2007-06-25

申请人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

发明人： Chunping Long ,  Jigang Zhao ,  Seung Moo Rim

IPC分类号： H01L21/00

CPC分类号： H01L27/1288 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/136236 ,  H01L27/1214

摘要： The present invention discloses a method for manufacturing a TFT LCD array substrate by utilizing the gray tone mask technology and the photoresist lifting-off technology with only two masks in two photolithography processes, and to a TFT LCD array substrate manufactured by the same. In the resultant array substrate, the gate line and the data line are perpendicular to and intersect with each other to define the pixel area, and one of the gate line and the data line is continuous and the other is discontinuous. The array substrate is covered with a passivation protection film. The disconnected gate line or the data line is connected together through the via holes formed in the passivation protection film and the connecting conductive film formed on the passivation protection film. The data line and the source electrode and drain electrode of the TFT are made of the same conductive film, and the connecting conductive film and the pixel electrode are made of the same conductive film in the same photolithography process.

摘要翻译： 本发明公开了通过在两个光刻工艺中仅使用两个掩模的灰色蒙版技术和光致抗蚀剂剥离技术以及由其制造的TFT LCD阵列基板来制造TFT LCD阵列基板的方法。 在合成的阵列基板中，栅极线和数据线彼此垂直并相交，以限定像素区域，并且栅极线和数据线之一是连续的，而另一个是不连续的。 阵列基板被钝化保护膜覆盖。 断开的栅线或数据线通过形成在钝化保护膜上的通孔和形成在钝化保护膜上的连接导电膜连接在一起。 TFT的数据线和源电极和漏电极由相同的导电膜制成，并且在相同的光刻工艺中，连接导电膜和像素电极由相同的导电膜制成。

公开(公告)号：US09059214B2

公开(公告)日：2015-06-16

申请号：US13469567

申请日：2012-05-11

申请人： Zheng Liu ,  Chunping Long ,  Chunsheng Jiang ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Yinan Liang

发明人： Zheng Liu ,  Chunping Long ,  Chunsheng Jiang ,  Jun Cheng ,  Lei Shi ,  Dongfang Wang ,  Yinan Liang

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L27/12

CPC分类号： H01L29/6675 ,  H01L27/1277

摘要： Embodiments of the disclosed technology relate to a method for manufacturing a thin film transistor (TFT) with a polysilicon active layer comprising: depositing an amorphous silicon layer on a substrate, and patterning the amorphous silicon layer so as to form an active layer comprising a source region, a drain region and a channel region; depositing an inducing metal layer on the source region and the drain region; performing a first thermal treatment on the active layer provided with the inducing metal layer so that the active layer is crystallized under the effect of the inducing metal; doping the source region and the drain region with a first impurity for collecting the inducing metal; and performing a second thermal treatment on the doped active layer so that the first impurity absorbs the inducing metal remained in the channel region.

摘要翻译： 所公开的技术的实施例涉及一种用于制造具有多晶硅有源层的薄膜晶体管（TFT）的方法，包括：在衬底上沉积非晶硅层，并且对非晶硅层进行构图以形成包括源极 区域，漏极区域和沟道区域; 在所述源极区域和所述漏极区域上沉积感应金属层; 在具有诱导金属层的有源层上进行第一热处理，使得活性层在诱导金属的作用下结晶; 用第一杂质掺杂源区和漏区以收集诱导金属; 以及对掺杂的有源层进行第二热处理，使得第一杂质吸收留在沟道区中的诱导金属。