GMR sensor with shallow contiguous junction and bias layers aligned with free sensor layers
    2.
    发明授权
    GMR sensor with shallow contiguous junction and bias layers aligned with free sensor layers 失效
    GMR传感器具有与自由传感器层对准的浅连续结和偏置层

    公开(公告)号:US07286329B1

    公开(公告)日:2007-10-23

    申请号:US10788656

    申请日:2004-02-27

    IPC分类号: G11B5/39

    CPC分类号: G01R31/318357 G11B5/3932

    摘要: A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.

    摘要翻译: 公开了一种具有浅连续结的磁传感器。 这种传感器可以大大提高批量生产头部的产量,特别是对于大型晶片。 磁偏置层可以与传感器的自由层对准,从而提高性能。 铣削可以在穿透反铁磁层之前终止,使得例如反铁磁层可以显着地延伸超过传感器的自由和固定层。

    Magnetic sensor with underlayers promoting high-coercivity, in-plane bias layers
    3.
    发明授权
    Magnetic sensor with underlayers promoting high-coercivity, in-plane bias layers 失效
    磁性传感器具有底层,促进高矫顽力,面内偏置层

    公开(公告)号:US07639457B1

    公开(公告)日:2009-12-29

    申请号:US10788765

    申请日:2004-02-27

    IPC分类号: G11B5/39 G11B5/127

    摘要: A magnetic sensor is disclosed comprising an antiferromagnetic layer; a first ferromagnetic layer disposed over the antiferromagnetic layer, the first ferromagnetic layer having a magnetization that is pinned by the antiferromagnetic layer; a second ferromagnetic layer disposed over the first ferromagnetic layer, the second ferromagnetic layer having a magnetization that rotates due to an applied magnetic field; a third ferromagnetic layer disposed adjacent to an end of the second ferromagnetic layer, the third ferromagnetic layer having a primarily in-plane magnetization providing a magnetic field to stabilize the end of the second ferromagnetic layer; an amorphous, metallic, nonmagnetic underlayer disposed adjacent to the antiferromagnetic layer; and a crystalline seed layer disposed between the underlayer and the third ferromagnetic layer, the seed layer having a crystalline structure that promotes the in-plane magnetization of the third ferromagnetic layer.

    摘要翻译: 公开了一种磁传感器,其包括反铁磁层; 设置在所述反铁磁层上的第一铁磁层,所述第一铁磁层具有由所述反铁磁层固定的磁化; 设置在所述第一铁磁层上的第二铁磁层,所述第二铁磁层具有由施加的磁场旋转的磁化; 与所述第二铁磁层的端部相邻设置的第三铁磁层,所述第三铁磁层具有主要的面内磁化,提供磁场以稳定所述第二铁磁层的端部; 邻近反铁磁层设置的无定形金属非磁性底层; 以及设置在所述底层和所述第三铁磁层之间的结晶种子层,所述种子层具有促进所述第三铁磁层的平面内磁化的晶体结构。

    Thin film write head having a laminated, flat top pole with bottom shaper and method of fabrication
    5.
    发明授权
    Thin film write head having a laminated, flat top pole with bottom shaper and method of fabrication 失效
    薄膜写头,具有具有底部整形器的层叠平顶顶和制造方法

    公开(公告)号:US06975486B2

    公开(公告)日:2005-12-13

    申请号:US10213339

    申请日:2002-08-06

    IPC分类号: G11B5/31 G11B5/33 G11B5/147

    摘要: A writer for high frequency, data storage heads. The writer includes a first magnetic pole upon which a write gap pedestal is formed with an upper pedestal layer of high moment material with a planar upper surface. An electrical coil is formed on the first magnetic pole. A write gap layer is deposited on the upper surface of the upper pedestal layer. The writer includes a second magnetic pole disposed above the first magnetic pole with a magnetic, flat, top pole layer. The second magnetic pole includes a bottom shaper fabricated from high moment material positioned between the coil and the top pole layer. An insulation insert separates the bottom shaper from the upper pedestal layer. The second magnetic pole includes a thin dielectric lamination layer that separates the top pole layer from the bottom shaper to disrupt the path of eddy current in the second magnetic pole.

    摘要翻译: 高频数据存储头的写入器。 写入器包括第一磁极,写入间隙基座形成有具有平坦上表面的高力矩材料的上基座层。 在第一磁极上形成电线圈。 写间隙层沉积在上基座层的上表面上。 写入器包括设置在具有磁性,平坦的顶极层的第一磁极上方的第二磁极。 第二磁极包括由位于线圈和顶极层之间的高力矩材料制成的底部整形器。 绝缘插件将底部整形器与上基座层分开。 第二磁极包括将顶极层与底部整形器分离以破坏第二磁极中涡流的路径的薄介电层压层。

    Magnetically soft, high saturation magnetization laminates of iron-cobalt-nitrogen and iron-nickel
    6.
    发明授权
    Magnetically soft, high saturation magnetization laminates of iron-cobalt-nitrogen and iron-nickel 有权
    铁 - 钴 - 氮和铁 - 镍的磁软,高饱和磁化层压板

    公开(公告)号:US06778358B1

    公开(公告)日:2004-08-17

    申请号:US10137030

    申请日:2002-05-01

    IPC分类号: G11B539

    摘要: In one aspect, a laminated structure including a first plurality of layers containing primarily-iron FeCoN interleaved with a second plurality of layers containing primarily iron FeNi is disclosed. The structure has an easy axis of magnetization and a hard axis of magnetization, has a magnetic saturation of at least about twenty-three-thousand Gauss, and has a magnetic coercivity measured substantially along its hard axis of magnetization that is less than two Oersted. Additional elements can be added in minority concentrations to form primarily-iron FeCoN layers with increased resistivity. The laminated structure has applicability in various fields in which high saturation magnetization, magnetically soft materials are advantageous, particularly for inductive heads.

    摘要翻译: 一方面,公开了一种叠层结构,其包括主要包含铁FeCoN的第一多个层,所述第一多个层与主要包含铁FeNi的第二多个层交错。 该结构具有容易的磁化轴和硬磁化轴,具有至少约二十三万高斯的磁饱和度,并且具有基本上沿其低于两个奥斯特的硬磁化轴测量的磁矫顽力。 可以以少数浓度添加额外的元素以形成具有增加的电阻率的主要的FeCoN层。 层压结构在各种领域中具有适用性,其中高饱和磁化强度,磁软材料是有利的,特别是对于感应头。

    Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask
    7.
    发明授权
    Method and system for providing a smaller critical dimension magnetic element utilizing a single layer mask 失效
    用于使用单层掩模提供较小临界尺寸的磁性元件的方法和系统

    公开(公告)号:US07419891B1

    公开(公告)日:2008-09-02

    申请号:US11352652

    申请日:2006-02-13

    IPC分类号: H01L21/20

    摘要: The method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic element stack that includes a plurality of layers and depositing a stop layer on the magnetic element stack. The method and system also include providing a dielectric antireflective coating (DARC) layer on the stop layer, forming a single layer mask for defining the magnetic element on a portion of the DARC layer, and removing a remaining portion of the DARC layer not covered by the single layer mask. The portion of the DARC layer covers a portion of the stop layer. The method further includes removing a remaining portion of the stop layer and defining the magnetic element using at least the portion of stop layer as a mask.

    摘要翻译: 公开了用于提供磁性元件的方法和系统。 该方法和系统包括提供包括多个层的磁性元件堆叠并在磁性元件堆叠上沉积停止层。 该方法和系统还包括在停止层上提供介电抗反射涂层(DARC)层,形成用于在DARC层的一部分上限定磁性元件的单层掩模,以及去除DARC层未覆盖的DARC层的剩余部分 单层面膜。 DARC层的一部分覆盖停止层的一部分。 该方法还包括使用停止层的至少一部分作为掩模去除停止层的剩余部分并限定磁性元件。

    Method for providing a perpendicular magnetic recording (PMR) transducer
    10.
    发明授权
    Method for providing a perpendicular magnetic recording (PMR) transducer 有权
    提供垂直磁记录(PMR)传感器的方法

    公开(公告)号:US08146236B1

    公开(公告)日:2012-04-03

    申请号:US12057692

    申请日:2008-03-28

    IPC分类号: G11B5/127 H04R31/00

    摘要: A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.

    摘要翻译: 公开了一种用于从极层提供垂直磁记录(PMR)换能器的方法和系统。 第一和第二平坦化停止层设置在极层上。 在第二平坦化停止层上设置掩模。 掩模的第一部分位于用于形成PMR极的极层的一部分上。 在提供面罩之后定义PMR极。 提供至少围绕PMR极的中间层。 至少在中间层上执行第一平面化。 在第一平坦化期间,去除第二平坦化停止层的一部分。 去除第二平坦化停止层的剩余部分。 执行第二平面化。 在第二平面化之后,第一平坦化停止层的一部分保留。 分别在PMR极和写间隙上提供写间隙和屏蔽。