摘要:
A magnetoresistive read head includes a magnetoresistive sensor and a bias structure adjacent to the magnetoresistive sensor. The bias structure provides a magnetostatic bias field for the magnetoresistive sensor. The bias structure includes an underlayer, a bias layer over the underlayer, and at least one dusting layer directly below at least one of the underlayer or the bias layer.
摘要:
A magnetic sensor is disclosed having a shallow contiguous junction. Such a sensor is can greatly increase yield for mass-produced heads, especially for large wafers. The magnetic bias layers can be aligned with a free layer of the sensor, improving performance. Milling may be terminated prior to penetration of an antiferromagnetic layer, so that for example the antiferromagnetic layer may extend significantly beyond the free and pinned layers of the sensor.
摘要:
A magnetic sensor is disclosed comprising an antiferromagnetic layer; a first ferromagnetic layer disposed over the antiferromagnetic layer, the first ferromagnetic layer having a magnetization that is pinned by the antiferromagnetic layer; a second ferromagnetic layer disposed over the first ferromagnetic layer, the second ferromagnetic layer having a magnetization that rotates due to an applied magnetic field; a third ferromagnetic layer disposed adjacent to an end of the second ferromagnetic layer, the third ferromagnetic layer having a primarily in-plane magnetization providing a magnetic field to stabilize the end of the second ferromagnetic layer; an amorphous, metallic, nonmagnetic underlayer disposed adjacent to the antiferromagnetic layer; and a crystalline seed layer disposed between the underlayer and the third ferromagnetic layer, the seed layer having a crystalline structure that promotes the in-plane magnetization of the third ferromagnetic layer.
摘要:
A method of fabricating a bias structure of a magnetoresistive read head for a magnetoresistive sensor stack formed on a substrate includes forming an underlayer and forming a bias layer over the underlayer. The method further includes forming a dusting layer directly below at least one of the underlayer or the bias layer and between the bias layer and the magnetoresistive sensor stack. The dusting layer includes discontinuous, nano-sized islands.
摘要:
A writer for high frequency, data storage heads. The writer includes a first magnetic pole upon which a write gap pedestal is formed with an upper pedestal layer of high moment material with a planar upper surface. An electrical coil is formed on the first magnetic pole. A write gap layer is deposited on the upper surface of the upper pedestal layer. The writer includes a second magnetic pole disposed above the first magnetic pole with a magnetic, flat, top pole layer. The second magnetic pole includes a bottom shaper fabricated from high moment material positioned between the coil and the top pole layer. An insulation insert separates the bottom shaper from the upper pedestal layer. The second magnetic pole includes a thin dielectric lamination layer that separates the top pole layer from the bottom shaper to disrupt the path of eddy current in the second magnetic pole.
摘要:
In one aspect, a laminated structure including a first plurality of layers containing primarily-iron FeCoN interleaved with a second plurality of layers containing primarily iron FeNi is disclosed. The structure has an easy axis of magnetization and a hard axis of magnetization, has a magnetic saturation of at least about twenty-three-thousand Gauss, and has a magnetic coercivity measured substantially along its hard axis of magnetization that is less than two Oersted. Additional elements can be added in minority concentrations to form primarily-iron FeCoN layers with increased resistivity. The laminated structure has applicability in various fields in which high saturation magnetization, magnetically soft materials are advantageous, particularly for inductive heads.
摘要:
The method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic element stack that includes a plurality of layers and depositing a stop layer on the magnetic element stack. The method and system also include providing a dielectric antireflective coating (DARC) layer on the stop layer, forming a single layer mask for defining the magnetic element on a portion of the DARC layer, and removing a remaining portion of the DARC layer not covered by the single layer mask. The portion of the DARC layer covers a portion of the stop layer. The method further includes removing a remaining portion of the stop layer and defining the magnetic element using at least the portion of stop layer as a mask.
摘要:
A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron.
摘要:
A method and system for providing a magnetic structure that includes at least one magnetic material is disclosed. The method and system include defining the magnetic structure. The magnetic structure also includes a top layer that is insensitive to an istroropic carbonyl reactive ion etch. The defining of the magnetic structure results in at least one artifact. The method and system further includes cleaning the at least one artifact using at least one isotropic carbonyl reactive ion etch.
摘要:
A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.