摘要:
The present invention discloses a method for fabricating a pixel area of an electro-luminescent display device. At least one buffer layer is formed on a substrate. An etch stop layer is formed on the buffer layer. At least one intermediate layer is formed over the etch stop layer. The intermediate layer is etched to expose the etch stop layer, which has an etch rate substantially selective against that of the intermediate layer. The etch stop layer is etched to expose the buffer layer, which has an etch rate substantially selective against that of the etch stop layer, thereby improving an level uniformity of the exposed buffer layer.
摘要:
A scanning device includes a base, a transparent platen above the base, a left sloped plate connecting a left platen edge of the transparent platen to a left base edge of the base, a right sloped plate connecting a right platen edge of the transparent platen to a right base edge of the base, and a scanning module below the transparent platen. The left sloped plate and the right sloped plate are disposed at two opposite sides of the transparent platen. A left angle between the left sloped plate and the transparent platen and a right angle between the right sloped plate and the transparent platen are greater than 90 degrees. The scanning module is movable along a direction parallel to the right platen edge and the left platen edge so as to acquire an image of a document placed on the transparent platen.
摘要:
A picture element for an electro-luminescent display comprises a substrate, a first intermediate structure disposed above a first area of the substrate, at least one first color type electro-luminescent device disposed above the first intermediate structure, a second intermediate structure disposed above a second area of the substrate, and at least one second color type electro-luminescent device disposed above the second intermediate structure. The second intermediate structure is different from the first intermediate structure.
摘要:
A transflective display panel includes a first substrate, a plurality of electroluminescent (EL) elements disposed on the first substrate, a plurality of reflectors disposed on the first substrate, a second substrate disposed opposite to the first substrate, a plurality of transparent electrodes disposed on a side of the second substrate opposite to the first substrate, a plurality of color filter layers disposed on a side of the second substrate opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. Accordingly, a problem of insufficient contrast ratio of the transflective display panel can be solved, when the ambient light is too high.
摘要:
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
摘要:
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
摘要:
In an active matrix organic light emitting diode (AMOLED) display panel having an improved OLED circuit layout in the TFT back panel, the AMOLED pixels in the AMOLED pixel array are arranged to have the TFT circuit portions of the AMOLED pixels in clustered regions so that each pulse of laser beam during laser annealing of the amorphous silicon film irradiates mostly TFT circuit portions, thus, allowing more efficient laser annealing process.
摘要:
A display panel including a pixel array region. The pixel array region includes a plurality of pixel cells disposed in a matrix configuration. Each pixel cell has an active device. A relative position of a first active device in a first pixel cell among the pixel cells is different from that of a second active device in a second pixel cell among the pixel cells.
摘要:
A transflective display panel includes a first substrate, a plurality of electroluminescent (EL) elements disposed on the first substrate, a plurality of reflectors disposed on the first substrate, a second substrate disposed opposite to the first substrate, a plurality of transparent electrodes disposed on a side of the second substrate opposite to the first substrate, a plurality of color filter layers disposed on a side of the second substrate opposite to the first substrate, and a liquid crystal layer disposed between the first substrate and the second substrate. Accordingly, a problem of insufficient contrast ratio of the transflective display panel can be solved, when the ambient light is too high.
摘要:
Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.