公开(公告)号：US07696029B2

公开(公告)日：2010-04-13

申请号：US11760824

申请日：2007-06-11

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

公开(公告)号：US07851282B2

公开(公告)日：2010-12-14

申请号：US12702477

申请日：2010-02-09

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

摘要翻译： 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入，使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后，在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极，随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。

公开(公告)号：US20070238231A1

公开(公告)日：2007-10-11

申请号：US11760824

申请日：2007-06-11

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L21/336

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

摘要翻译： 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入，使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后，在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极，随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。

公开(公告)号：US07268367B2

公开(公告)日：2007-09-11

申请号：US10992278

申请日：2004-11-18

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L29/786

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

摘要翻译： 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入，使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后，在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极，随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。

公开(公告)号：US20100136730A1

公开(公告)日：2010-06-03

申请号：US12702477

申请日：2010-02-09

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L21/28

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

摘要翻译： 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入，使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后，在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极，随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。

公开(公告)号：US20060030090A1

公开(公告)日：2006-02-09

申请号：US10992278

申请日：2004-11-18

申请人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

发明人： Wei-Pang Huang ,  Chun-Huai Li ,  Yun-Sheng Chen

IPC分类号： H01L21/00

CPC分类号： H01L27/127 ,  H01L27/1214

摘要： Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.

摘要翻译： 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入，使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后，在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极，随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。

公开(公告)号：US20150187306A1

公开(公告)日：2015-07-02

申请号：US14241798

申请日：2014-01-21

申请人： Shen-Sian Syu ,  Chun-Huai Li

发明人： Shen-Sian Syu ,  Chun-Huai Li

IPC分类号： G09G3/36

CPC分类号： G09G3/3655 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/067 ,  G09G2310/08 ,  G09G2320/0209 ,  G09G2320/0219 ,  G09G2320/0223 ,  G09G2320/0233 ,  G09G2320/0247 ,  G09G2320/029 ,  G09G2320/046 ,  G09G2320/0693 ,  G09G2320/08 ,  G09G2360/147 ,  G09G2360/16

摘要： The present disclosure provides a system and method for repairing poor display in a liquid crystal display panel. The system comprises: an image acquisition device for acquiring image data of the liquid crystal display panel containing poor display areas; a lossless compression module for calculating difference values between the acquired image data to perform lossless compression; a storage for storing data after the lossless compression; and a Mura repair module for decompressing the data in the storage, and repairing Mura of the decompressed original image data to generate information feed to the liquid crystal display panel. In the present invention, the acquired image data are stored in the storage, after being subjected to the lossless compression/decompression, and goes through the Mura repair, and then is output to the panel, such that both the capacity of the storage and the cost can be reduced without degrading the effect of De-Mura processing.

摘要翻译： 本公开提供了一种用于修复液晶显示面板中的差显示的系统和方法。 该系统包括：图像获取装置，用于获取包含差的显示区域的液晶显示面板的图像数据; 用于计算所获取的图像数据之间的差值以进行无损压缩的无损压缩模块; 用于在无损压缩之后存储数据的存储器; 以及用于对存储器中的数据进行解压缩的Mura修复模块，以及修复解压缩的原始图像数据的Mura以生成到液晶显示面板的信息馈送。 在本发明中，所获取的图像数据在经过无损压缩/解压缩之后被存储在存储器中，并经过Mura修复，然后被输出到面板，使得存储容量和 可以降低成本，而不会降低De-Mura处理的效果。

公开(公告)号：US08823624B2

公开(公告)日：2014-09-02

申请号：US12856228

申请日：2010-08-13

申请人： Yu-Jung Liu ,  Yu-Hsuan Li ,  Chung-Chun Chen ,  Chun-Hung Kuo ,  Chun-Huai Li

发明人： Yu-Jung Liu ,  Yu-Hsuan Li ,  Chung-Chun Chen ,  Chun-Hung Kuo ,  Chun-Huai Li

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3659 ,  G09G2300/0842 ,  G09G2310/04 ,  G09G2330/022 ,  G09G2340/0428

摘要： The present invention relates to a memory circuit integrated in each pixel of a display device includes a switching circuit and a memory unit. The switching circuit includes a first transistor having a gate configured to receive a switching control signal, a source and a drain electrically coupled to a liquid crystal capacitor of the pixel, and a second transistor having a gate configured to receive a switching control signal, a source electrically coupled to a storage capacitor of the pixel, and a drain electrically coupled to the liquid crystal capacitor. The memory unit is electrically coupled between the source of first transistor and the storage capacitor. The switching control signal is configured such that in the normal mode, the first transistor is turned off, while the second transistor is turned on, so that the storage capacitor is electrically coupled to the liquid crystal capacitor in parallel and the memory unit is bypassed, and in the still mode, the first transistor is turned on, while the second transistor is turned off, so that the storage capacitor controls the memory unit to supply a stored data to the liquid crystal capacitor.

摘要翻译： 本发明涉及集成在显示装置的每个像素中的存储电路，包括开关电路和存储单元。 开关电路包括第一晶体管，其具有被配置为接收开关控制信号的栅极，电耦合到像素的液晶电容器的源极和漏极;以及第二晶体管，具有被配置为接收开关控制信号的栅极， 电源耦合到像素的存储电容器，以及电耦合到液晶电容器的漏极。 存储单元电耦合在第一晶体管的源极和存储电容器之间。 开关控制信号被配置为使得在正常模式下，第一晶体管截止，而第二晶体管导通，使得存储电容器并联电耦合到液晶电容器，并且存储器单元被旁路， 并且在静止模式下，第一晶体管导通，而第二晶体管截止，使得存储电容器控制存储单元以将存储的数据提供给液晶电容器。

公开(公告)号：US08384645B2

公开(公告)日：2013-02-26

申请号：US12129633

申请日：2008-05-29

申请人： Mei-Sheng Ma ,  Chien-Hung Chen ,  Chun-Huai Li

发明人： Mei-Sheng Ma ,  Chien-Hung Chen ,  Chun-Huai Li

IPC分类号： G09G3/36

CPC分类号： G09G3/3611 ,  G09G3/3413 ,  G09G2310/021 ,  G09G2310/0235 ,  G09G2320/0233

摘要： A method for driving an LCD panel and an LCD using the same are provided. The method includes following steps. Firstly, a number of scan signals are provided sequentially, and an enabling time of the scan signals excluding the last scan signal is adjusted according to a compensation time, so as to unfix the enabling time of these scan signals. Next, the scan signals having the unfixed enabling time are sequentially provided to an LCD panel, so as to turn on a number of row pixels of the LCD panel one by one. Thereby, the entire brightness of the LCD can be uniformed by applying the method disclosed in the present invention.

摘要翻译： 提供了一种用于驱动LCD面板的方法和使用其的LCD。 该方法包括以下步骤。 首先，依次提供多个扫描信号，并且根据补偿时间来调整除了最后扫描信号之外的扫描信号的使能时间，以便解除这些扫描信号的使能时间。 接下来，将具有不固定使能时间的扫描信号依次提供给LCD面板，以逐个打开LCD面板的行像素数。 因此，通过应用本发明公开的方法，可以使LCD的整个亮度均匀。

公开(公告)号：US08274493B2

公开(公告)日：2012-09-25

申请号：US13404009

申请日：2012-02-24

申请人： Mei-Sheng Ma ,  Hsin-Hung Lee ,  Yao-Jen Hsieh ,  Yung-Hsien Ho ,  Heng-Sheng Chou ,  Chun-Huai Li ,  Meng-Hsiang Chang

发明人： Mei-Sheng Ma ,  Hsin-Hung Lee ,  Yao-Jen Hsieh ,  Yung-Hsien Ho ,  Heng-Sheng Chou ,  Chun-Huai Li ,  Meng-Hsiang Chang

IPC分类号： G06F3/041

CPC分类号： G06F3/044 ,  G06F3/0412

摘要： A touch panel and a portable electronic device thereof are provided. The present invention can accurately determine a position touched by a user on the touch panel by judging whether or not a potential voltage value between a reference capacitor and a sensing capacitor of a pixel having a sensing area being changed, or to determine whether a switch of a pixel having the sensing area being conducted.

摘要翻译： 提供了触摸面板及其便携式电子设备。 本发明可以通过判断具有感测区域的像素的参考电容器和感测电容器之间的电位电压值是否改变来确定触摸面板上的用户触摸的位置，或者确定是否开关 具有传感区域的像素。