公开(公告)号：US08198869B2

公开(公告)日：2012-06-12

申请号：US12073924

申请日：2008-03-12

申请人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

发明人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

IPC分类号： H02J7/00 ,  H02J7/14

CPC分类号： H02M3/07

摘要： A circuit for charging a capacitor block including series-connected capacitive elements has an input node for receiving an input, an output node coupled to the capacitor block, a third capacitive element connectable to the input node and the output node, and first and second switching circuitries coupled to the third capacitive element. A voltage sensor determines a relationship between first voltage at the first capacitive element and second voltage at the second capacitive element to separately control switching of the first and second switching circuitries in accordance with the relationship between the voltages.

摘要翻译： 用于对包括串联连接的电容元件的电容器块进行充电的电路具有用于接收输入的输入节点，耦合到电容器块的输出节点，可连接到输入节点和输出节点的第三电容元件，以及第一和第二开关 电路耦合到第三电容元件。 电压传感器确定第一电容元件的第一电压与第二电容元件的第二电压之间的关系，以分别根据电压之间的关系来控制第一和第二开关电路的开关。

公开(公告)号：US20120161722A1

公开(公告)日：2012-06-28

申请号：US13409992

申请日：2012-03-01

申请人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

发明人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

IPC分类号： H02J7/00

CPC分类号： H02M3/07

摘要： A circuit for charging a capacitor block including series-connected capacitive elements has an input node for receiving an input, an output node coupled to the capacitor block, a third capacitive element connectable to the input node and the output node, and first and second switching circuitries coupled to the third capacitive element. A voltage sensor determines a relationship between first voltage at the first capacitive element and second voltage at the second capacitive element to separately control switching of the first and second switching circuitries in accordance with the relationship between the voltages.

摘要翻译： 用于对包括串联连接的电容元件的电容器块进行充电的电路具有用于接收输入的输入节点，耦合到电容器块的输出节点，可连接到输入节点和输出节点的第三电容元件，以及第一和第二开关 电路耦合到第三电容元件。 电压传感器确定第一电容元件的第一电压与第二电容元件的第二电压之间的关系，以分别根据电压之间的关系来控制第一和第二开关电路的开关。

公开(公告)号：US08587263B2

公开(公告)日：2013-11-19

申请号：US13409992

申请日：2012-03-01

申请人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

发明人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

IPC分类号： H02J7/00 ,  H02J7/14

CPC分类号： H02M3/07

摘要： A circuit for charging a capacitor block including series-connected capacitive elements has an input node for receiving an input, an output node coupled to the capacitor block, a third capacitive element connectable to the input node and the output node, and first and second switching circuitries coupled to the third capacitive element. A voltage sensor determines a relationship between first voltage at the first capacitive element and second voltage at the second capacitive element to separately control switching of the first and second switching circuitries in accordance with the relationship between the voltages.

公开(公告)号：US20090230926A1

公开(公告)日：2009-09-17

申请号：US12073924

申请日：2008-03-12

申请人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

发明人： Wen Yang ,  Yong Kok Sim ,  Vui Min Ho

IPC分类号： H02J7/00

CPC分类号： H02M3/07

摘要： A circuit for charging a capacitor block including series-connected capacitive elements has an input node for receiving an input, an output node coupled to the capacitor block, a third capacitive element connectable to the input node and the output node, and first and second switching circuitries coupled to the third capacitive element. A voltage sensor determines a relationship between first voltage at the first capacitive element and second voltage at the second capacitive element to separately control switching of the first and second switching circuitries in accordance with the relationship between the voltages.

摘要翻译： 用于对包括串联连接的电容元件的电容器块进行充电的电路具有用于接收输入的输入节点，耦合到电容器块的输出节点，可连接到输入节点和输出节点的第三电容元件，以及第一和第二开关 电路耦合到第三电容元件。 电压传感器确定第一电容元件的第一电压与第二电容元件的第二电压之间的关系，以分别根据电压之间的关系来控制第一和第二开关电路的开关。

公开(公告)号：US20050247398A1

公开(公告)日：2005-11-10

申请号：US11158167

申请日：2005-06-20

申请人： Wen Yang ,  Wen Yang ,  Shih-li Chen

发明人： Wen Yang ,  Wen Yang ,  Shih-li Chen

IPC分类号： H01L21/60 ,  B23P19/00 ,  B44C1/00 ,  C09J1/00 ,  H01L21/00 ,  H01L21/44 ,  H01L21/50 ,  H01L21/58 ,  H01L21/68 ,  H01L21/82 ,  H01L23/31

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L2221/68354 ,  H01L2924/0002 ,  Y10T29/53178 ,  Y10T29/53191 ,  Y10T29/53274 ,  Y10T428/28 ,  H01L2924/00

摘要： A tool of wafer level package comprises a first base, an elastic material and a second base. The elastic material is coated on the first base, and the elastic material has viscosity in common state to adhere a plurality of dies. The second base is coated by adhesive material to adhere the dies. The plurality of dies are departed from the elastic material by a special environment after adhering.

摘要翻译： 晶片级封装的工具包括第一基座，弹性材料和第二基座。 弹性材料涂覆在第一基底上，并且弹性材料具有共同的粘度以粘附多个模具。 第二基底由粘合剂材料涂覆以粘附模具。 多个模具在粘附后通过特殊的环境离开弹性材料。

公开(公告)号：US09570260B2

公开(公告)日：2017-02-14

申请号：US14232412

申请日：2011-06-17

申请人： Wen Yang ,  Hailang Tang ,  Hongbing Liu

发明人： Wen Yang ,  Hailang Tang ,  Hongbing Liu

IPC分类号： H01H61/02 ,  H01H37/76 ,  H01C7/10 ,  H01C7/12 ,  H01H9/32

CPC分类号： H01H61/02 ,  H01C7/10 ,  H01C7/12 ,  H01H9/32 ,  H01H37/761 ,  H01H2037/762

摘要： A circuit protection device including a housing, a metal oxide varistor disposed within said housing, a terminal having a contact lead at a first end electrically attached to said metal oxide varistor by solder and having a second end extending outside of said housing, an arc shield disposed within said housing between said contact lead and said metal oxide varistor, a micro switch housed in a pocket portion of the housing, said micro switch having a trigger portion and an indicator portion disposed at least partially outside of said housing, said arc shield positioned against said trigger portion, and a spring configured to bias said arc shield away from said pocket portion and to move said arc shield away from said trigger portion when said solder is melted to provide a barrier between said metal oxide varistor and said contact lead, whereby the indicator portion is retracted into the housing.

摘要翻译： 一种电路保护装置，包括壳体，设置在所述壳体内的金属氧化物变阻器，具有在第一端处的接触引线的端子，所述第一端通过焊料电连接到所述金属氧化物变阻器，并且具有延伸到所述壳体外部的第二端， 设置在所述壳体内的所述接触引线和所述金属氧化物变阻器之间，微型开关，其容纳在所述壳体的凹部中，所述微型开关具有触发部分和至少部分地设置在所述壳体外部的指示器部分， 以及弹簧，其构造成在所述焊料熔化时使所述电弧罩偏离所述袋部，并使所述电弧护罩远离所述触发器部分移动，以在所述金属氧化物变阻器和所述接触引线之间提供阻挡层，由此 指示器部分缩回到壳体中。

公开(公告)号：US08632970B2

公开(公告)日：2014-01-21

申请号：US12930041

申请日：2010-12-23

申请人： Yuling Luo ,  Wen Yang

发明人： Yuling Luo ,  Wen Yang

IPC分类号： C12Q1/68 ,  C12M1/34 ,  C12P19/34 ,  C07H21/04

CPC分类号： C12Q1/6874 ,  C12Q1/6832 ,  C12Q1/6834 ,  C12Q1/6837 ,  C12Q2537/143 ,  C12Q2563/143 ,  C12Q2563/149

摘要： Methods of capturing two or more nucleic acids simultaneously from a single sample are provided. Different nucleic acids are captured through cooperative hybridization events on different subsets of particles or at different selected positions on a spatially addressable solid support. Methods of capturing one or more long nucleic acids and methods of capturing one or more nucleic acid for sequencing are also provided. Compositions, kits, and systems related to the methods are also described.

摘要翻译： 提供了从单个样品同时捕获两种或更多种核酸的方法。 通过在不同的颗粒子集上或在空间上可寻址的固体支持物上的不同选择位置上的协同杂交事件捕获不同的核酸。 还提供了捕获一种或多种长核酸的方法和捕获一种或多种核酸进行测序的方法。 还描述了与方法相关的组合物，试剂盒和系统。

公开(公告)号：US20130078819A1

公开(公告)日：2013-03-28

申请号：US13528509

申请日：2012-06-20

申请人： Qingqing Sun ,  Runchen Fang ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

发明人： Qingqing Sun ,  Runchen Fang ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

IPC分类号： H01L21/316

CPC分类号： H01L21/0228 ,  H01L21/02052 ,  H01L21/02178 ,  H01L21/02301 ,  H01L21/02312 ,  H01L21/306

摘要： The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning & passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al2O3 dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al2O3 ALD with the GaAs surface, and then deposit high-quality Al2O3 dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.

摘要翻译： 本发明属于半导体材料的技术领域，具体涉及一种清洗和钝化砷化镓（GaAs）表面自氧化物并沉积Al2O3电介质的方法。 该方法包括：使用新型硫钝化剂与GaAs表面的自氧化物反应，对其进行清洗，并产生钝化的硫化物膜，使GaAs与外界环境分离，从而防止GaAs再次氧化; 通过Al2O3 ALD的反应物三甲基铝（TMA）与GaAs表面的预处理反应，进一步清洗GaAs表面上的残余物，如自生氧化物和硫化物，然后通过ALD作为栅极电介质沉积高质量的Al2O3电介质 其将GaAs与外部环境完全分离。 本发明具有简单的工艺和良好的效果，并且可以为制造GaAs器件提供前提条件。

公开(公告)号：US20130078798A1

公开(公告)日：2013-03-28

申请号：US13528474

申请日：2012-06-20

申请人： Qingqing Sun ,  Lin Chen ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

发明人： Qingqing Sun ,  Lin Chen ,  Wen Yang ,  Pengfei Wang ,  Wei Zhang

IPC分类号： H01L21/768

CPC分类号： H01L21/823871 ,  H01L21/76805 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76867 ,  H01L21/76895 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention belongs to the technical field of integrated semiconductor circuits, and relates to a method used in a process no greater than 32 nm to improve the electromigration resistance of Cu interconnects. Coating layers on Cu interconnects, such as CuSi3, CuGe, and CuSiN, can be prepared by autoregistration, and with the use of new impervious layer materials, the electromigration resistance of Cu interconnects can be largely improved and the high conductivity thereof can be kept, which provides an ideal solution for interconnection process for process nodes no greater than 32 nm.

摘要翻译： 本发明属于集成半导体电路的技术领域，涉及在不超过32nm的工艺中使用的方法来提高Cu互连的电迁移率。 铜互连上的涂层如CuSi3，CuGe和CuSiN可以通过自动配准来制备，并且通过使用新的不透水层材料，可以大大提高Cu互连的电迁移电阻，并且可以保持高导电性， 这为不超过32nm的工艺节点的互连工艺提供了理想的解决方案。

公开(公告)号：US20110182787A1

公开(公告)日：2011-07-28

申请号：US13060299

申请日：2008-12-19

申请人： Ping Lu ,  Yangjun Yang ,  Jiaxu Huang ,  Zhuchun Chen ,  Senlin Liu ,  Wen Yang

发明人： Ping Lu ,  Yangjun Yang ,  Jiaxu Huang ,  Zhuchun Chen ,  Senlin Liu ,  Wen Yang

IPC分类号： C01G23/02

CPC分类号： C01G23/022 ,  C01G23/024

摘要： The invention provides a method for producing titanium tetrachloride by using a low grade titanium material, and belongs to the chemical field. The technical problem to be solved is to provide a method for producing titanium tetrachloride by using a low grade titanium material capable of continuous industrialized production. The method is characterized in that the low grade titanium material containing a certain proportion of titanium carbide is caused to directly react with chlorine at 600-700° to produce the titanium tetrachloride. Long-time continuous and stable operation can be realized by using the process parameters of the method, and chlorination rate of the titanium carbide in the titanium material reaches above 90%, so that the titanium material can be better used for producing the titanium tetrachloride.

摘要翻译： 本发明提供一种使用低等级的钛材料生产四氯化钛的方法，属于化学领域。 要解决的技术问题是提供一种通过使用能够连续工业化生产的低级钛材料来生产四氯化钛的方法。 该方法的特征在于，使含有一定比例的碳化钛的低级钛材料与600〜700°的直接反应生成四氯化钛。 通过使用该方法的工艺参数可以实现长时间连续稳定的操作，钛材料中碳化钛的氯化率达到90％以上，可以更好地利用钛材料生产四氯化钛。