公开(公告)号：US06223420B1

公开(公告)日：2001-05-01

申请号：US09206016

申请日：1998-12-04

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

IPC分类号： G11B542

CPC分类号： G11B5/3109 ,  B82Y10/00 ,  G11B5/3919 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Ms&rgr; of the flux guide layer is greater than 50 times the Ms&rgr; of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and &rgr; is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.

摘要翻译： 读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。 助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。 这增加了读取传感器的效率。 助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是 磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。 由于磁通导向器高阻电流分流损耗几乎消除。

公开(公告)号：US06873499B2

公开(公告)日：2005-03-29

申请号：US09769165

申请日：2001-01-24

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  David John Seagle

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3109 ,  B82Y10/00 ,  G11B5/3919 ,  G11B5/3967 ,  Y10T29/49044 ,  Y10T29/49046

摘要： A read head has a flux guide layer that is immediately adjacent (abuts) the back edge of a read sensor. The flux guide layer is made of a high resistance soft magnetic material that conducts magnetic flux from the back edge of the read sensor so that the magnetic response at the back edge of the read sensor is significantly higher than zero. This increases the efficiency of the read sensor. The material for the flux guide layer is A-B-C where A is selected from the group Fe and Co, B is selected from the group Hf, Y, Ta and Zr and C is selected from the group O and N. In a preferred embodiment A-B-C is Fe—Hf—O and the Msρ of the flux guide layer is greater than 50 times the Msρ of the read sensor layer where the read sensor layer is NiFe, Ms is saturation magnetization and ρ is resistivity. Because of the flux guides high resistance current shunting losses are nearly eliminated.

摘要翻译： 读头具有与读取传感器的后边缘紧邻（邻接）的磁通引导层。 助焊剂层由高电阻软磁材料制成，其从读取传感器的后边缘传导磁通，使得读取传感器的后边缘处的磁响应明显高于零。 这增加了读取传感器的效率。 助焊剂层的材料是ABC，其中A选自Fe和Co组，B选自Hf，Y，Ta和Zr组，C选自O和N组。在优选实施方案中，ABC是 磁通导向层的Fe-Hf-O和Msrho大于读取传感器层为NiFe的读取传感器层的Msrho的50倍，Ms为饱和磁化强度，rho为电阻率。 由于磁通导向器高阻电流分流损耗几乎消除。

公开(公告)号：US06519120B1

公开(公告)日：2003-02-11

申请号：US09632014

申请日：2000-08-02

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996

摘要： An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni—Fe—Cr or Ni—Cr film and the AFM layer is preferably Ni—Mn. The non-magnetic Ni—Fe—Cr seed layer results in improved grain structure in the deposited layers enhancing the GMR coefficients and the thermal stability of the SV sensors. The improved thermal stability enables use of Ni—Mn with its high blocking temperature and strong pinning field as the AFM layer material without SV sensor performance degradation from the high temperature anneal step needed to develop the desired exchange coupling.

摘要翻译： 具有优选结构的SV传感器，其中种子层是非磁性Ni-Fe-Cr或Ni-Cr膜，AFM层优选为Ni-Mn，其中底物/种子/自由/间隔物/固定/ AFM /帽。 非磁性Ni-Fe-Cr种子层导致沉积层中改善的晶粒结构增强了GMR系数和SV传感器的热稳定性。 改进的热稳定性使得具有高阻挡温度和强钉扎场的Ni-Mn作为AFM层材料而不会由于开发所需交换耦合所需的高温退火步骤而降低SV传感器性能。

公开(公告)号：US06785099B2

公开(公告)日：2004-08-31

申请号：US10068231

申请日：2002-02-04

申请人： Wen-Yaung Lee ,  Tsann Lin ,  Daniele Mauri

发明人： Wen-Yaung Lee ,  Tsann Lin ,  Daniele Mauri

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/09 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/332 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996

摘要： A read head is provided having having ultrathin read gap layers with improved insulative properties between a magnetoresistive sensor and ferromagnetic shield layers. The read head comprises a magnetoresistive sensor with first and second shield cap layers made of high resistivity permeable magnetic material formed between the first and second ferromagnetic shields and the first and second insulative read gap layers, respectively. The shield cap layers made of Fe—Hf—Ox material, or alternatively, the Mn—Zn ferrite material provide highly resistive or insulating soft ferromagnetic layers which add to the electrically insulative read gap layers to provide increased electrical insulation of the spin valve sensor from the metallic ferromagnetic shields while not adding to the magnetic read gap of the read head. The extra insulation provided by the highly resistive shield cap layers makes it possible to use ultrathin insulative first and second read gap layers without increased risk of electrical shorting between the spin valve sensor and the ferromagnetic first and second shields.

摘要翻译： 提供读头，其具有在磁阻传感器和铁磁屏蔽层之间具有改进的绝缘性能的超薄读取间隙层。 读头包括磁阻传感器，其具有由分别形成在第一和第二铁磁屏蔽之间的高电阻率可渗透磁性材料制成的第一和第二屏蔽盖层以及第一和第二绝缘读取间隙层。 由Fe-Hf-Ox材料制成的屏蔽帽层，或者Mn-Zn铁氧体材料提供高电阻或绝缘的软铁磁层，这些层叠电绝缘读取间隙层以提供自旋阀传感器的增加的电绝缘 金属铁磁屏蔽，同时不增加读头的磁读取间隙。 由高电阻屏蔽盖层提供的额外的绝缘使得可以使用超薄绝缘的第一和第二读取间隙层，而不增加自旋阀传感器和铁磁性第一和第二屏蔽之间的电短路的风险。

公开(公告)号：US6141191A

公开(公告)日：2000-10-31

申请号：US986311

申请日：1997-12-05

申请人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

发明人： Wen Yaung Lee ,  Tsann Lin ,  Daniele Mauri ,  Robert John Wilson

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996

摘要： An SV sensor with the preferred structure Substrate/Seed/Free/Spacer/Pinned/AFM/Cap where the seed layer is a non-magnetic Ni--Fe--Cr or Ni--Cr film and the AFM layer is preferably Ni--Mn. The non-magnetic Ni--Fe--Cr seed layer results in improved grain structure in the deposited layers enhancing the GMR coefficients and the thermal stability of the SV sensors. The improved thermal stability enables use of Ni--Mn with its high blocking temperature and strong pinning field as the AFM layer material without SV sensor performance degradation from the high temperature anneal step needed to develop the desired exchange coupling.

摘要翻译： 具有优选结构的SV传感器，其中种子层是非磁性Ni-Fe-Cr或Ni-Cr膜，AFM层优选为Ni-Mn，其中底物/种子/自由/间隔物/固定/ AFM /帽。 非磁性Ni-Fe-Cr种子层导致沉积层中改善的晶粒结构增强了GMR系数和SV传感器的热稳定性。 改进的热稳定性使得具有高阻挡温度和强钉扎场的Ni-Mn作为AFM层材料而不会由于开发所需交换耦合所需的高温退火步骤而降低SV传感器性能。

公开(公告)号：US08675316B2

公开(公告)日：2014-03-18

申请号：US12101761

申请日：2008-04-11

申请人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

发明人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

公开(公告)号：US5731936A

公开(公告)日：1998-03-24

申请号：US721642

申请日：1996-09-26

申请人： Wen Yaung Lee ,  Daniele Mauri

发明人： Wen Yaung Lee ,  Daniele Mauri

IPC分类号： G11B5/39 ,  G11B5/40 ,  H01F10/32

CPC分类号： B82Y25/00 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/324 ,  G11B5/40

摘要： An MR sensor with an improved MR coefficient and improved thermal stability is provided by employing one or more chromium based spacer layers which are interfacially adjacent a Permalloy (NiFe) stripe. The chromium based spacer layers may be NiFeCr or NiCr. The best compositions have been found to be (Ni.sub.89 Fe.sub.21).sub.60 Cr.sub.40 and Ni.sub.60 Cr.sub.40. For NiCr the MR coefficient of the MR stripe is most enhanced when the NiCr layer is deposited on a layer of tantalum (Ta). Further, when the thicknesses of the NiFeCr and the NiCr layers are 25 .ANG. and 50 .ANG. respectively the MR coefficients are optimized. Both spacer layers have a high resistance compatible with low shunting of the sense current.

摘要翻译： 通过使用与坡莫合金（NiFe）条纹相接触的一个或多个基于铬的间隔层，提供具有改进的MR系数和改善的热稳定性的MR传感器。 铬基间隔层可以是NiFeCr或NiCr。 已发现最好的组合物是（Ni89Fe21）60Cr40和Ni60Cr40。 对于NiCr，当NiCr层沉积在钽层（Ta）上时，MR条纹的MR系数最大。 此外，当NiFeCr和NiCr层的厚度分别为25和50时，MR系数被优化。 两个间隔层具有高电阻兼容的低分流感测电流。

公开(公告)号：US07675717B2

公开(公告)日：2010-03-09

申请号：US11638271

申请日：2006-12-12

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Brian R. York

IPC分类号： G11B5/33

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163

摘要： A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a group consisting of Ta, NiFeCr, NiFeCoCr, NiFe, Cu, Ta/NiFeCr, Ta/NiFeCr/NiFe, Ta/Ru and Ta/NiFeCoCr, and an upper seed layer where the upper seed layer material is chosen from a group consisting of Ru, Cu, NiFe, Cu(x)Au(1−x)(x=0.22-0.5) alloys, Ru(x)Cr(1−x)(x=0.1-0.5) alloys, NiFeCr and NiFeCoCr. An AFM layer is formed on the upper seed layer and a ferromagnetic pinned layer is formed on the AFM layer. The exchange coupling energy Jk between the AFM layer and pinned layers exceeds 1.3 erg/cm2. Also disclosed is a method of fabrication of a magnetic head including a read head sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange.

摘要翻译： 公开了CIP或CPP配置的磁头，其具有由于与AFM层的电子交换增加而具有强固定的铁磁层的读取传感器。 读取传感器包括下部种子层，其材料选自由Ta，NiFeCr，NiFeCoCr，NiFe，Cu，Ta / NiFeCr，Ta / NiFeCr / NiFe，Ta / Ru和Ta / NiFeCoCr组成的组，以及上层晶种层 其中上部种子层材料选自Ru，Cu，NiFe，Cu（x）Au（1-x）（x = 0.22-0.5）合金，Ru（x）Cr（1-x）（x = 0.1-0.5）合金，NiFeCr和NiFeCoCr。 在上种籽层上形成AFM层，在AFM层上形成铁磁性钉扎层。 AFM层和钉扎层之间的交换耦合能量Jk超过1.3erg / cm2。 还公开了一种由于增加的电子交换而制造包括具有强固定铁磁层的读头传感器的磁头的方法。

公开(公告)号：US20090257149A1

公开(公告)日：2009-10-15

申请号：US12101761

申请日：2008-04-11

申请人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

发明人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

IPC分类号： G11B5/127

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

公开(公告)号：US07848064B2

公开(公告)日：2010-12-07

申请号：US12172134

申请日：2008-07-11

申请人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

发明人： Wen-Yaung Lee ,  Jinshan Li ,  Daniele Mauri ,  Koichi Nishioka ,  Yasunari Tajima

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3929 ,  H01L43/12 ,  Y10T428/1121

摘要： An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less than 0.8 nm, preferably between 0.1 and 0.6 nm. The spacer is also annealed in a magnetic field that is 1.5 Tesla or higher, and preferably greater than 5 Tesla. This design yields unexpected results by more than tripling the pinning field over that of typical AP-pinned GMR and TMR sensors that utilize ruthenium spacers which are 0.8 nm thick and annealed in a relatively low magnetic field of approximately 1.3 Tesla.

摘要翻译： 反平行销钉式传感器设置有增加传感器的反平行耦合强度的间隔件。 反平行钉扎传感器是具有纯钌或钌合金间隔物的GMR或TMR传感器。 间隔物的厚度小于0.8nm，优选在0.1和0.6nm之间。 间隔物也在1.5特斯拉或更高，优选大于5特斯拉的磁场中退火。 该设计通过将钉扎场超过使用0.8nm厚的钌间隔物并且在约1.3特斯拉的相对低的磁场中退火的典型AP钉扎GMR和TMR传感器的三倍以上而产生意想不到的结果。