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    Magnetoresistive sensor with sub-layering of pinned layers
    1.
    发明授权
    Magnetoresistive sensor with sub-layering of pinned layers 有权
    磁阻传感器，分层钉扎层

    公开(公告)号：US08675316B2

    公开(公告)日：2014-03-18

    申请号：US12101761

    申请日：2008-04-11

    申请人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

    发明人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

    摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

    摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

    MAGNETORESISTIVE SENSOR WITH SUB-LAYERING OF PINNED LAYERS
    2.
    发明申请
    MAGNETORESISTIVE SENSOR WITH SUB-LAYERING OF PINNED LAYERS 有权
    具有分层层的磁性传感器

    公开(公告)号：US20090257149A1

    公开(公告)日：2009-10-15

    申请号：US12101761

    申请日：2008-04-11

    申请人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

    发明人： Wen-yaung Lee ,  Daniele Mauri ,  Alexander M. Zeltser

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/08

    摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.

    摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。

    GMR sensor having layers treated with nitrogen for increased magnetoresistance
    5.
    发明申请
    GMR sensor having layers treated with nitrogen for increased magnetoresistance 有权
    GMR传感器具有用氮处理的层以增加磁阻

    公开(公告)号：US20060158791A1

    公开(公告)日：2006-07-20

    申请号：US11039085

    申请日：2005-01-18

    申请人： Wen-yaung Lee ,  Thomas Shatz ,  Dulip Welipitiya ,  Brian York

    发明人： Wen-yaung Lee ,  Thomas Shatz ,  Dulip Welipitiya ,  Brian York

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.

    摘要翻译： 一种磁阻传感器，其具有已经用氮气（氮化）处理并且在沉积期间具有氮原位加入的Ta盖层的衬底。 氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。 沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。 沉积在氧化铝基体上的氮的量足以构成氮层，但影响氧化铝的结构，使氧化铝具有所需的结晶结构和非常光滑的表面。 盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。

    GMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE
    7.
    发明申请
    GMR SENSOR HAVING AN UNDER-LAYER TREATED WITH NITROGEN FOR INCREASED MAGNETORESISTANCE 失效
    具有用于增加磁阻的氮处理的下层的GMR传感器

    公开(公告)号：US20070263327A1

    公开(公告)日：2007-11-15

    申请号：US11769519

    申请日：2007-06-27

    申请人： Wen-yaung Lee ,  Thomas Shatz ,  Dulip Welipitiya ,  Brian York

    发明人： Wen-yaung Lee ,  Thomas Shatz ,  Dulip Welipitiya ,  Brian York

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated). The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than or monolayer. The amount of nitrogen deposited on top of the alumina substrate is not enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface.

    摘要翻译： 具有已经用氮气（氮化）处理的衬底的磁阻传感器。 氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。 沉积在氧化铝顶部的氮的量小于或等于两个单层，优选小于或者单层。 沉积在氧化铝基体顶部的氮的量不足以构成氮层，但是影响氧化铝的结构以使氧化铝具有所需的晶体结构和非常光滑的表面。

    GMR sensor having layers treated with nitrogen for increased magnetoresistance
    8.
    发明授权
    GMR sensor having layers treated with nitrogen for increased magnetoresistance 有权
    GMR传感器具有用氮处理的层以增加磁阻

    公开(公告)号：US07251110B2

    公开(公告)日：2007-07-31

    申请号：US11039085

    申请日：2005-01-18

    申请人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    发明人： Wen-yaung Lee ,  Thomas E. Shatz ,  Dulip Ajantha Welipitiya ,  Brian R. York

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3906 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A magnetoresistive sensor having a substrate that has been treated with nitrogen (nitrogenated) and having a Ta cap layer with nitrogen added in situ during deposition. The nitrogenated substrate includes an alumina base layer and a thin top layer of crystalline alumina that has had a very small amount of nitrogen deposited on top. The amount of nitrogen deposited on top of the alumina is less than or equal to two monolayer, and is preferably less than on monolayer. The amount of nitrogen deposited on top of the alumina substrate is riot enough to constitute a layer of nitrogen, but affects the structure of the alumina to cause the alumina to have a desired crystalline structure and an extremely smooth surface. The nitrogen in the cap layer can be formed by depositing a Ta cap layer in a sputter deposition chamber having a small amount of nitrogen in an Ar atmosphere.

    摘要翻译： 一种磁阻传感器，其具有已经用氮气（氮化）处理并且在沉积期间具有氮原位加入的Ta盖层的衬底。 氮化基底包括氧化铝基底层和结晶氧化铝的薄顶层，其顶部具有非常少量的氮。 沉积在氧化铝顶部的氮的量小于或等于两个单层，并且优选小于单层。 沉积在氧化铝基体上的氮的量足以构成氮层，但影响氧化铝的结构，使氧化铝具有所需的结晶结构和非常光滑的表面。 盖层中的氮可以通过在Ar气氛中在具有少量氮的溅射沉积室中沉积Ta盖层来形成。