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公开(公告)号：US08675316B2
公开(公告)日：2014-03-18
申请号：US12101761
申请日：2008-04-11
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。
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公开(公告)号：US20090257149A1
公开(公告)日：2009-10-15
申请号：US12101761
申请日：2008-04-11
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F41/307 , H01L43/08
摘要： Methods and apparatus provide magnetoresistance sensors. A tunneling magnetoresistance (TMR) sensor may include configurations that are arranged as a top TMR stack. One of two antiparallel layers of pinned layers within the TMR stack may be subdivided by a spacer layer. Tantalum may form the spacer layer that is inserted in a reference layer, which is one of the pinned layers and is located between a barrier layer and an antiparallel coupling layer that enables antiparallel coupling between the reference layer and a keeper layer of the pinned layers. The barrier layer deposited on a free layer of the TMR stacks separates the pinned layers from the free layer such that TMR effects are detectable with the sensors.
摘要翻译： 方法和装置提供磁阻传感器。 隧道磁阻（TMR）传感器可以包括被布置为顶部TMR堆叠的配置。 TMR堆叠中的钉扎层的两个反平行层之一可以被间隔层细分。 钽可以形成插入到参考层中的间隔层，该参考层是被钉扎层之一，并且位于阻挡层和反平行耦合层之间，其使参考层和被钉扎层的保持层之间能够反平行耦合。 沉积在TMR堆叠的自由层上的阻挡层将被钉扎层与自由层分离，使得TMR效应可以用传感器检测。
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公开(公告)号：US08107202B2
公开(公告)日：2012-01-31
申请号：US12345733
申请日：2008-12-30
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译： 一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。
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公开(公告)号：US20090257152A1
公开(公告)日：2009-10-15
申请号：US12345733
申请日：2008-12-30
IPC分类号： G11B5/33
CPC分类号： G11B5/398 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01L43/08
摘要： A magnetoresistive sensor having an antiparallel coupled pinned layer structure including an AP1 layer and an AP2 layer. The AP2 layer includes two ferromagnetic layers AP2(a) and AP2(b), and a separation layer sandwiched therebetween. The AP2(a) layer is significantly larger than the AP2(b) layer, which results in strong pinning, while the separation layer provides increased TMR and reduced RA.
摘要翻译： 一种具有包括AP1层和AP2层的反并联耦合固定层结构的磁阻传感器。 AP2层包括两个铁磁层AP2（a）和AP2（b），夹在它们之间的分离层。 AP2（a）层显着大于AP2（b）层，这导致强钉扎，而分离层提供增加的TMR和减少的RA。
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5.发明申请DUAL-LAYER FREE LAYER IN A TUNNELING MAGNETORESISTANCE (TMR) ELEMENT HAVING DIFFERENT MAGNETIC THICKNESSES 审中-公开具有不同磁性厚度的TUNNELING MAGNETORESISTANCE（TMR）元件中的双层自由层公开(公告)号：US20090168271A1
公开(公告)日：2009-07-02
申请号：US11965564
申请日：2007-12-27
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/302 , H01L43/10
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer structure comprised of dual-layers. The free layer structure includes a first free layer and a second amorphous free layer. The magnetic thicknesses of the first free layer and the second amorphous free layer of the dual layer structure differ to provide improved TMR performance. In one example, the first free layer may have a magnetic thickness that is less than 40% of the total magnetic thickness of the free layer structure.
摘要翻译： 公开了隧道磁阻（TMR）元件和相关的制造方法。 在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和由双层构成的自由层结构。 自由层结构包括第一自由层和第二非晶自由层。 双层结构的第一自由层和第二无定形自由层的磁性厚度不同以提供改进的TMR性能。 在一个示例中，第一自由层可以具有小于自由层结构的总磁性厚度的40％的磁性厚度。
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公开(公告)号：US20080151442A1
公开(公告)日：2008-06-26
申请号：US11645462
申请日：2006-12-26
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The present invention discloses improved TMR ratio, Hce, and λ performance for high free layer iron concentrations between about 70 and 91.5 atomic %, when compared to the prior art.
摘要翻译： 公开了MTJ传感器中自由层的改进配方。 现有技术的优化结果表明，低于20原子％的自由层铁浓度具有最佳性能。 当与现有技术相比时，本发明公开了改进的TMR比，Hεce和对于高约70至91.5原子％的高自由层铁浓度的λ性能。
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公开(公告)号：US07151653B2
公开(公告)日：2006-12-19
申请号：US10782208
申请日：2004-02-18
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： The pinned layer structure in a self-pinned spin valve is deposited using a DC aligning field. The deposition of each of the Reference and Keeper layer in the pinned layer occurs within two different polarity DC aligning fields. Thus, a first portion of the Reference layer is deposited with a DC alignment field of a first polarity, i.e., either positive or negative, and a second portion of the Reference layer is deposited in a DC alignment field of opposite polarity. The Keeper layer is similarly deposited, with a first portion of the Keeper layer deposited in a first polarity DC alignment field and the second portion deposited in the opposite polarity DC alignment field. By splitting the deposition of the Reference and Keeper layers into portions using DC aligning fields the pinned layer structure is highly repeatable while providing a good thickness uniformity of the structure.
摘要翻译： 使用直流对准场沉积自锁自旋阀中的钉扎层结构。 参考和守护层中的每一个在被钉扎层中的沉积发生在两个不同极性的直流对准场内。 因此，参考层的第一部分被沉积有第一极性的DC对准场，即正或负，并且参考层的第二部分沉积在相反极性的DC对准场中。 Keeper层类似地沉积，Keeper层的第一部分沉积在第一极性DC对准场中，而第二部分沉积在相反极性的DC对准场中。 通过使用直流对准场将参考和守恒分层的沉积分裂成部分，钉扎层结构是高度可重复的，同时提供了良好的结构厚度均匀性。
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8.发明授权公开(公告)号：US07791845B2
公开(公告)日：2010-09-07
申请号：US11645462
申请日：2006-12-26
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An improved formulation for free layers in MTJ sensors is disclosed. Optimized results of the prior art suggest free layer iron concentrations less than 20 atomic % give the best performance. The present invention discloses improved TMR ratio, Hce, and λ performance for high free layer iron concentrations between about 70 and 91.5 atomic %, when compared to the prior art.
摘要翻译： 公开了MTJ传感器中自由层的改进配方。 现有技术的优化结果表明，低于20原子％的自由层铁浓度具有最佳性能。 与现有技术相比，本发明公开了对于高约70至91.5原子％的高自由层铁浓度的改进的TMR比，Hce和λ性能。
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公开(公告)号：US07751156B2
公开(公告)日：2010-07-06
申请号：US11536891
申请日：2006-09-29
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/08 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
摘要翻译： 公开了隧道磁阻（TMR）元件和相关的制造方法。 在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和具有双层结构的自由层。 在一个实施例中，自由层包括第一无定形自由层和第二无定形自由层。 在另一个实施方案中，自由层包括第一多晶自由层和第二无定形自由层。 双层结构的第一自由层和第二自由层的组成不同，以提供改进的TMR性能和受控的磁致伸缩。 在一个实例中，第一自由层可以具有针对TMR优化的组成，而第二自由层可以具有针对磁致伸缩优化的组成。
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公开(公告)号：US20080080101A1
公开(公告)日：2008-04-03
申请号：US11536891
申请日：2006-09-29
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3929 , H01L43/08 , H01L43/12
摘要： Tunneling magnetoresistive (TMR) elements and associated methods of fabrication are disclosed. In one embodiment, the TMR element includes a ferromagnetic pinned layer structure, a tunnel barrier layer, and a free layer having a dual-layer structure. In one embodiment, the free layer includes a first amorphous free layer and a second amorphous free layer. In another embodiment, the free layer includes a first polycrystalline free layer and a second amorphous free layer. The compositions of the first free layer and the second free layer of the dual layer structure differ to provide improved TMR performance and controlled magnetostriction. In one example, the first free layer may have a composition optimized for TMR while the second free layer may have a composition optimized for magnetostriction.
摘要翻译： 公开了隧道磁阻（TMR）元件和相关的制造方法。 在一个实施例中，TMR元件包括铁磁钉扎层结构，隧道势垒层和具有双层结构的自由层。 在一个实施例中，自由层包括第一无定形自由层和第二无定形自由层。 在另一个实施方案中，自由层包括第一多晶自由层和第二无定形自由层。 双层结构的第一自由层和第二自由层的组成不同，以提供改进的TMR性能和受控的磁致伸缩。 在一个实例中，第一自由层可以具有针对TMR优化的组成，而第二自由层可以具有针对磁致伸缩优化的组成。
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