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公开(公告)号：US07700262B2
公开(公告)日：2010-04-20
申请号：US12044004
申请日：2008-03-07
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10T428/3154
摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 并且R 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。
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公开(公告)号：US20080166568A1
公开(公告)日：2008-07-10
申请号：US12044004
申请日：2008-03-07
IPC分类号： B32B27/28
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10T428/3154
摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
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3.发明授权Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use 有权具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法公开(公告)号：US07063931B2
公开(公告)日：2006-06-20
申请号：US10753989
申请日：2004-01-08
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive photoresist composition comprises a radiations sensitive acid generator, and a polymer that may include a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, and a second repeating unit, which may include a pendant acid-labile moiety. The positive photoresist composition may also comprise at least one of a solvent, a quencher, and a surfactant. A patterned photoresist layer, made of the positive photoresist composition, may be formed on a substrate, the positive photoresist layer may be exposed to a pattern of imaging radiation, a portion of the positive photoresist layer that is exposed to the pattern of imaging radiation may be removed to reveal a correspondingly patterned substrate for subsequent processing in the manufacture of a semiconductor device.
摘要翻译： 正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和可以包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物和可包括侧酸不稳定部分的第二重复单元。 正性光致抗蚀剂组合物还可以包含溶剂，猝灭剂和表面活性剂中的至少一种。 由正型光致抗蚀剂组合物制成的图案化光致抗蚀剂层可以形成在衬底上，正性光致抗蚀剂层可以暴露于成像辐射的图案，暴露于成像辐射图案的正性光致抗蚀剂层的一部分可以 被去除以露出相应图案化的衬底，用于在制造半导体器件中进行后续处理。
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4.发明授权Positive photoresist composition with a polymer including a fluorosulfonamide group and process for its use 有权具有包含氟磺酰胺基团的聚合物的正性光致抗蚀剂组合物及其使用方法公开(公告)号：US07651831B2
公开(公告)日：2010-01-26
申请号：US12136163
申请日：2008-06-10
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
CPC分类号： G03F7/0397 , G03F7/0046 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive photoresist composition comprises a radiation sensitive acid generator, and a polymer that includes a first repeating unit derived from a sulfonamide monomer including a fluorosulfonamide functionality, a second repeating unit having a pendant acid-labile moiety, and a third repeating unit having a lactone functionality. The positive photoresist composition may be used to form patterned features on a substrate, such as those used in the manufacture of a semiconductor device.
摘要翻译： 正性光致抗蚀剂组合物包含辐射敏感性酸产生剂和包含衍生自包含氟磺酰胺官能团的磺酰胺单体的第一重复单元的聚合物，具有侧酸不稳定部分的第二重复单元和具有内酯的第三重复单元 功能。 正光致抗蚀剂组合物可以用于在基底上形成图案化的特征，例如用于制造半导体器件的那些。
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5.发明授权公开(公告)号：US06534239B2
公开(公告)日：2003-03-18
申请号：US09844848
申请日：2001-04-27
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0392 , Y10S430/106
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a monomer with a pendant group containing plural acid labile moieties. Preferred pendant groups containing plural acid labile moieties are characterized by the presence of a bulky end group.
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6.发明授权公开(公告)号：US06756180B2
公开(公告)日：2004-06-29
申请号：US10278178
申请日：2002-10-22
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0046 , Y10S430/108
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation (and possibly other radiation) and are developable to form resist structures of improved development characteristics, improved etch resistance, and reduced post-exposure bake sensitivity are enabled by the use of resist compositions containing an imaging polymer having cyclic olefin monomeric units respectively having pendant, acid-labile protecting moieties, lactone moieties and fluoroalcohol moieties. The lactone moiety is preferably a pendant lactone ester.
摘要翻译： 通过使用抗蚀剂组合物可实现酸催化的正抗蚀剂组合物，其可以用193nm辐射（和可能的其它辐射）成像并且可显影以形成改进的显影特性，改进的耐蚀刻性和降低的曝光后烘烤灵敏度的抗蚀剂结构 其含有分别具有侧链，酸不稳定保护部分，内酯部分和氟代醇部分的环烯烃单体单元的成像聚合物。 内酯部分优选为侧链内酯。
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公开(公告)号：US07335456B2
公开(公告)日：2008-02-26
申请号：US10855045
申请日：2004-05-27
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/2041 , Y10T428/3154
摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.
摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。
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公开(公告)号：US06902874B2
公开(公告)日：2005-06-07
申请号：US10673783
申请日：2003-09-29
申请人： Wenjie Li , Pushkara Rao Varanasi
发明人： Wenjie Li , Pushkara Rao Varanasi
IPC分类号： C08F222/32 , G03F7/039 , H01L21/027 , H01L21/44
CPC分类号： G03F7/0395 , G03F7/0397
摘要： Acid-catalyzed positive resist compositions which are imageable with 193 nm radiation and/or possibly other radiation and are developable to form resist structures of improved development characteristics and improved etch resistance are enabled by the use of resist compositions containing imaging polymer having a 2-cyano acrylic monomer.
摘要翻译： 可以通过193nm辐射和/或可能的其它辐射成像并且可显影以形成改善的显影特性和改善的耐蚀刻性的抗蚀剂结构的酸催化的正性抗蚀剂组合物通过使用含有具有2-氰基的成像聚合物的抗蚀剂组合物 丙烯酸单体。
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公开(公告)号：US06770418B2
公开(公告)日：2004-08-03
申请号：US10026120
申请日：2001-12-21
申请人： Wenjie Li , Pushkara Rao Varanasi , Ranee Kwong
发明人： Wenjie Li , Pushkara Rao Varanasi , Ranee Kwong
IPC分类号： G03C173
CPC分类号： G03F7/0755 , G03F7/0045 , G03F7/0392 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： Acid-catalyzed positive resist compositions suitable for bilayer or multilayer lithographic applications are enabled by the use of a combination of (a) an acid-sensitive imaging polymer, (b) a radiation-sensitive acid generator, and (c) a non-polymeric silicon additive. The imaging polymer is preferably imageable with 193 nm or shorter wavelength imaging radiation. The resist compositions preferably contain at least about 5 wt. % silicon based on the weight of the imaging polymer. The compositions generally provide reduced line edge roughness compared to conventional silicon-containing resists.
摘要翻译： 通过使用（a）酸敏感成像聚合物，（b）辐射敏感酸产生剂和（c）非聚合物 硅添加剂。 成像聚合物优选可以用193nm或更短波长成像辐射成像。 抗蚀剂组合物优选含有至少约5wt。 基于成像聚合物重量的硅。 与常规的含硅抗蚀剂相比，组合物通常提供较少的线边缘粗糙度。
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公开(公告)号：US06696216B2
公开(公告)日：2004-02-24
申请号：US09896538
申请日：2001-06-29
IPC分类号： G03F7003
CPC分类号： C07C381/00 , C07C2603/74 , C07D333/34 , G03F7/0045 , G03F7/0382 , G03F7/0397 , Y10S430/122
摘要： Thiophene-containing photo acid generators having either of the following general formulas: wherein at least one of R1, R2 or R3 is thiophene or thiophene that is substituted with alkyl, alkoxy or cycloalkyl, and the remaining R1, R2 or R3, not containing a thiophene moiety, are independently selected from the group consisting of alkyl, cycloalkyl and aryl, or at least one of R1, R2 or R3 are joined together to form a cyclic moiety having from about 4 to about 8 ring carbon atoms; and Y is a counter ion, are disclosed as well as the use thereof as a component of a chemically amplified resist composition. In addition to the thiophene-containing photo acid generator, the inventive composition includes a chemically amplified base polymer, a solvent, an optional photosensitizer, an optional base, an optional dissolution modifying agent and an optional surfactant.
摘要翻译： 含噻吩的光酸产生剂具有以下通式之一：其中R 1，R 2或R 3中的至少一个是被烷基，烷氧基或环烷基取代的噻吩或噻吩，剩余的 R 1，R 2或R 3不含噻吩部分，独立地选自烷基，环烷基和芳基，或R 1，R 2或 R 3连接在一起形成具有约4-约8个环碳原子的环状部分; 并且Y是抗衡离子，并且作为化学放大抗蚀剂组合物的组分的用途被公开。 除了含噻吩的光酸产生剂之外，本发明的组合物还包括化学放大的基础聚合物，溶剂，任选的光敏剂，任选的碱，任选的溶解改性剂和任选的表面活性剂。
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