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    Semiconductor device and methods thereof
    1.
    发明授权
    Semiconductor device and methods thereof 有权
    半导体器件及其方法

    公开(公告)号：US08097499B2

    公开(公告)日：2012-01-17

    申请号：US11702624

    申请日：2007-02-06

    申请人： Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    发明人： Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    IPC分类号： H01L21/00 ,  H01L21/84

    CPC分类号： H01L21/02609 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02532

    摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.

    摘要翻译： 半导体器件及其方法。 示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层 ，第一层，第二层和第三层各自相对于多个晶面之一高度取向。 示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层 第三层各自相对于多个晶面之一高度取向。

    Semiconductor device and methods thereof
    2.
    发明申请
    Semiconductor device and methods thereof 有权
    半导体器件及其方法

    公开(公告)号：US20070246802A1

    公开(公告)日：2007-10-25

    申请号：US11702624

    申请日：2007-02-06

    申请人： Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    发明人： Wenxu Xianyu ,  Young-soo Park ,  Jun-ho Lee ,  Hyuk Lim ,  Hans S. Cho ,  Huaxiang Yin

    IPC分类号： H01L23/58 ,  H01L21/469

    CPC分类号： H01L21/02609 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02516 ,  H01L21/02532

    摘要： A semiconductor device and method thereof. The example method may include forming a semiconductor device, including forming a first layer on a substrate, the first layer including aluminum nitride (AlN), forming a second layer by oxidizing a surface of the first layer and forming a third layer on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes. The example semiconductor device may include a substrate including a first layer, the first layer including aluminum nitride (AlN), a second layer formed by oxidizing a surface of the first layer and a third layer formed on the second layer, the first, second and third layers each being highly oriented with respect to one of a plurality crystallographic planes.

    摘要翻译： 半导体器件及其方法。 示例性方法可以包括形成半导体器件，包括在衬底上形成第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面并在第二层上形成第三层来形成第二层 ，第一层，第二层和第三层各自相对于多个晶面之一高度取向。 示例性半导体器件可以包括：衬底，其包括第一层，第一层包括氮化铝（AlN），通过氧化第一层的表面形成的第二层和形成在第二层上的第三层，第一层，第二层和第二层 第三层各自相对于多个晶面之一高度取向。

    Method of manufacturing a thin film transistor
    7.
    发明授权
    Method of manufacturing a thin film transistor 有权
    制造薄膜晶体管的方法

    公开(公告)号：US07470579B2

    公开(公告)日：2008-12-30

    申请号：US11557360

    申请日：2006-11-07

    申请人： Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

    发明人： Hyuk Lim ,  Takashi Noguchi ,  Jong-man Kim ,  Kyung-bae Park ,  Huaxiang Yin

    IPC分类号： H01L21/336

    CPC分类号： H01L29/78621 ,  H01L29/66757

    摘要： A thin film transistor having an offset or a lightly doped drain (LDD) structure by self alignment and a method of fabricating the same comprises a substrate, a silicon layer disposed on the substrate and including a channel region, a source region and a drain region at both sides of the channel region, and offset regions, each offset regions disposed between the channel region and one of the source and drain regions at both sides of the channel region, a gate insulating layer covering the channel region and the offset regions disposed at both sides of the channel region excluding the source and drain regions, and a gate layer formed on the channel region excluding the offset regions. The thin film transistor has the structure in which an offset or LDD is obtained without an additional mask process.

    摘要翻译： 具有通过自对准的偏移或轻掺杂漏极（LDD）结构的薄膜晶体管及其制造方法包括：衬底，设置在衬底上的硅层，并且包括沟道区，源极区和漏极区 在通道区域的两侧和偏移区域，每个偏移区域设置在沟道区域和沟道区域两侧的源极和漏极区域之一之间，覆盖沟道区域的栅极绝缘层和设置在沟道区域的偏移区域 除了源极和漏极区域之外的沟道区域的两侧，以及形成在除偏移区域之外的沟道区域上的栅极层。 薄膜晶体管具有在没有附加掩模处理的情况下获得偏移或LDD的结构。

    Security system using laser range finder and method of detecting intruder using laser range finder
    9.
    发明授权
    Security system using laser range finder and method of detecting intruder using laser range finder 失效
    使用激光测距仪的安全系统和使用激光测距仪检测入侵者的方法

    公开(公告)号：US08035515B2

    公开(公告)日：2011-10-11

    申请号：US12244766

    申请日：2008-10-02

    申请人： Jae-Hyung Jang ,  Hyuk Lim

    发明人： Jae-Hyung Jang ,  Hyuk Lim

    IPC分类号： G08B13/18

    CPC分类号： G08B13/184 ,  G01S17/026 ,  G01S17/88

    摘要： A security system using a laser range finder that can precisely determine an existence and a location of an intruder, and a method of detecting the intruder using the laser range finder are provided. The security system using a laser range finder, the security system includes: the laser range finder emitting laser beam, receiving the reflected laser beam, measuring a distance between the laser range finder and a target object, and detecting an existence and a location of an intruder; and at least one reflective means reflecting the emitted laser beam toward the laser beam finder, wherein at least one reflective means is spaced by a predetermined distance of the laser range finder and is installed a predetermined distance from the laser range finder.

    摘要翻译： 提供了使用能够精确地确定入侵者的存在和位置的激光测距仪的安全系统，以及使用激光测距仪检测入侵者的方法。 使用激光测距仪的安全系统，安全系统包括：激光测距仪发射激光束，接收反射的激光束，测量激光测距仪与目标物体之间的距离，以及检测激光测距仪的存在和位置 入侵者 以及至少一个将发射的激光束反射到激光束取景器的反射装置，其中至少一个反射装置与激光测距仪隔开预定距离，并且与激光测距仪安装预定距离。

    Display Apparatus and Method for Manufacturing the Same
    10.
    发明申请
    Display Apparatus and Method for Manufacturing the Same 审中-公开
    显示装置及其制造方法

    公开(公告)号：US20110006662A1

    公开(公告)日：2011-01-13

    申请号：US12831840

    申请日：2010-07-07

    申请人： Young Ho Kwon ,  Hyung Sup Lee ,  Jae Young Byun ,  Hyuk Lim ,  Young Sam Yu ,  Dong Gun Oh

    发明人： Young Ho Kwon ,  Hyung Sup Lee ,  Jae Young Byun ,  Hyuk Lim ,  Young Sam Yu ,  Dong Gun Oh

    IPC分类号： H01J5/00 ,  H01J9/24

    CPC分类号： H01L25/048 ,  H01L51/5203 ,  H01L51/524 ,  H01L51/525 ,  H01L51/5253 ,  H01L2251/5361 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An electro-optic device is inserted and mounted into the internal space of the multi-layered member. Herein, the multi-layered member includes the first and second plates disposed to be separated from and facing each other. At least one of the first and second plates is manufactured with a transparent material to transmit light that is generated from the electro-optic device. Among the first and second plates of the multi-layered member, a plate corresponding to the size of a display apparatus to be manufactured is used. Consequently, by inserting and mounting a small electro-optic device into the internal space of the multi-layered member that is manufactured in a large area, a large-area display apparatus can be manufactured even without using a large-size deposition apparatus and a large-area substrate. Accordingly, the manufacturing cost of the large-area display apparatus can be saved.

    摘要翻译： 电光装置插入并安装到多层构件的内部空间中。 这里，多层构件包括设置成彼此分离并面对的第一和第二板。 第一和第二板中的至少一个由透明材料制成，以透射从电光装置产生的光。 在多层构件的第一和第二板中，使用与要制造的显示装置的尺寸对应的板。 因此，通过将小电光装置插入并安装在大面积制造的多层构件的内部空间中，即使不使用大尺寸沉积装置也可以制造大面积显示装置，并且 大面积基板。 因此，可以节省大面积显示装置的制造成本。