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公开(公告)号：US20240240994A1
公开(公告)日：2024-07-18
申请号：US18355102
申请日：2023-07-19
Inventor： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Rohan Babu NAGABHIRAVA , Kuok San HO , Hisashi TAKANO , Son T. LE , Nam Hai PHAM , Huy H. HO
CPC classification number: G01K7/36 , G11B5/3906 , G11B2005/0021
Abstract: The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.
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公开(公告)号：US20240412759A1
公开(公告)日：2024-12-12
申请号：US18229772
申请日：2023-08-03
Applicant: Western Digital Technologies, Inc.
Inventor： Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Son T. LE , Hisashi TAKANO
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer. The SOT device comprises a seed layer and a BiSb layer having a (012) orientation. The seed layer comprises at least one of an amorphous/nanocrystalline material with a nearest neighbor x-ray diffraction peak with a d-spacing in the range of about 2.02 Å to about 2.20 Å; a polycrystalline material having a (111) orientation and an a-axis of about 3.53 Å to about 3.81 Å; and a polycrystalline material having a cubic (100) or tetragonal (001) orientation and an a-axis of about 4.1 Å to about 4.7 Å. When the seed layer comprises an amorphous material or a polycrystalline material having a (111), the BiSb layer is doped, and the seed layer has a lower a/c ratio than when the seed layer comprises polycrystalline material having a cubic (100) or tetragonal (001) orientation.
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3.发明申请公开(公告)号：US20240428820A1
公开(公告)日：2024-12-26
申请号：US18367882
申请日：2023-09-13
Inventor： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Hisashi TAKANO , Fan TUO , Hassan OSMAN , Nam Hai PHAM
IPC: G11B5/39
Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a first sensor disposed at a media facing surface (MFS) comprising at least one free layer, a second sensor disposed at the MFS comprising at least one free layer, a first spin generator spaced from the first sensor and recessed from the MFS, and a second spin generator spaced from the second sensor and recessed from the MFS. The first and second spin generators each individually comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise BiSb. The first and second sensors are configured to detect a read signal using a first voltage lead and a second voltage lead. The first and second spin generators are configured to inject spin current through non-magnetic layers to the first and second sensors using a plurality of current leads.
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公开(公告)号：US20240420732A1
公开(公告)日：2024-12-19
申请号：US18367877
申请日：2023-09-13
Inventor： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Hisashi TAKANO , Fan TUO , Hassan OSMAN , Nam Hai PHAM
IPC: G11B5/31
Abstract: The present disclosure generally relates to a magnetic recording head comprising a read head. The read head comprises a sensor disposed at a media facing surface (MFS) and a spin generator spaced from the sensor and recessed from the MFS. The sensor and spin generators are disposed on a non-magnetic layer. The sensor comprises a free layer and the spin generator comprises at least one spin orbit torque (SOT) layer. The SOT layer may comprise topological material such as BiSb. The sensor is configured to detect a read signal using a first voltage lead and a second voltage lead. The spin generator is configured to inject spin current through the non-magnetic layer to the sensor using a first current lead and a second current lead. The shape of the non-magnetic layer is a triangular or trapezoidal shape to further concentrate spin current.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20250006221A1
公开(公告)日：2025-01-02
申请号：US18229785
申请日：2023-08-03
Inventor： Quang LE , Xiaoyong LIU , Cherngye HWANG , Brian R. YORK , Son T. LE , Sharon Swee Ling BANH , Maki MAEDA , Fan TUO , Yu TAO , Hisashi TAKANO , Nam Hai PHAM
IPC: G11B5/39
Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.
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公开(公告)号：US20240144965A1
公开(公告)日：2024-05-02
申请号：US18228529
申请日：2023-07-31
Applicant: Western Digital Technologies, Inc.
Inventor： Quang LE , Rohan Babu NAGABHIRAVA , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC classification number: G11B5/39 , G11B5/11 , G11B2005/3996
Abstract: The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.
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7.发明公开公开(公告)号：US20240310459A1
公开(公告)日：2024-09-19
申请号：US18350584
申请日：2023-07-11
Inventor： Quang LE , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Rohan Babu NAGABHIRAVA , Kuok San HO , Hisashi TAKANO , Son T. LE , Nam Hai PHAM , Huy H. HO
CPC classification number: G01R33/075 , G01R33/0052 , G01R33/093
Abstract: The present disclosure generally relates to temperature detection devices including a ferromagnetic (FM) material disposed at a media facing surface (MFS). The FM material is configured to produce a first electric voltage signal in response to a temperature gradient due to an anomalous Nernst effect. The temperature detection device may also include a spin-orbit torque (SOT) material abutting the FM material. The SOT material includes at least one of BiSb, a topological insulator, a topological half-Heusler alloy, or a weakly oxidized heavy metal. The SOT material is recessed from the MFS, wherein the SOT material is configured to receive a spin current parallel to the temperature gradient generated by a spin Seebeck effect in the FM material. The spin current is detectable as a second electric voltage signal via an inverse spin Hall effect. The first electric voltage signal is added to the second electric voltage signal.
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公开(公告)号：US20240144960A1
公开(公告)日：2024-05-02
申请号：US18226625
申请日：2023-07-26
Applicant: Western Digital Technologies, Inc.
Inventor： Quang LE , Rohan Babu NAGABHIRAVA , Xiaoyong LIU , Brian R. YORK , Son T. LE , Cherngye HWANG , Kuok San HO , Hisashi TAKANO
CPC classification number: G11B5/11 , G11B5/3116
Abstract: The present disclosure generally relates to a two dimensional magnetic recording (TDMR) spin-orbit torque (SOT) read head comprising bismuth antimony (BiSb) layers. The read head comprises a lower reader comprising a first SOT stack and an upper reader comprising a second SOT stack. The first SOT stack and the second SOT stack each individually comprise a BiSb layer recessed from a media facing surface (MFS) and a free layer exposed at the MFS. The BiSb layers of each SOT stack are recessed from the MFS a distance of about 5 nm to about 20 nm, the distance being less than a length of the free layers. In one embodiment, the lower reader and the upper reader share a current path. In another embodiment, the lower reader and the upper reader have separate current paths.
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公开(公告)号：US20230306993A1
公开(公告)日：2023-09-28
申请号：US17705147
申请日：2022-03-25
Inventor： Quang LE , Brian R. YORK , Xiaoyong LIU , Son T. LE , Cherngye HWANG , Michael A. GRIBELYUK , Xiaoyu XU , Kuok San HO , Hisashi TAKANO , Julian SASAKI , Huy H. HO , Khang H. D. NGUYEN , Nam Hai PHAM
IPC: G11B5/39
CPC classification number: G11B5/39 , G11B2005/3996 , G11B2005/0021
Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.
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