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1.发明公开公开(公告)号：US20240032437A1
公开(公告)日：2024-01-25
申请号：US18197495
申请日：2023-05-15
发明人： Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Susumu OKAMURA , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC分类号： H10N50/10 , H10N50/85 , G11C11/161 , H10B61/00 , G01R33/093 , G11B5/3909
摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a nonmagnetic buffer layer, a nonmagnetic interlayer, a ferromagnetic layer, and a nonmagnetic barrier layer. One or more of the barrier layer, interlayer, and buffer layer comprise a polycrystalline non-Heusler alloy material, or a Heusler alloy and a material selected from the group consisting of: Cu, Ag, Ge, Mn, Ni, Co, Mo, W, Sn, B, and In. The Heusler alloy is a full Heusler alloy comprising X2YZ or a half Heusler alloy comprising XYZ, where X is one of: Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Ir, Pt, and Au, Y is one of: Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Hf, and W, and Z is one of: B, Al, Si, Ga, Ge, As, In, Sn, Sb, and Bi.
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公开(公告)号：US20240005973A1
公开(公告)日：2024-01-04
申请号：US17854785
申请日：2022-06-30
发明人： Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Susumu OKAMURA , Kuok San HO , Hisashi TAKANO , Randy G. SIMMONS
CPC分类号： G11C11/161 , H01L43/10 , G11B5/3906 , H01L43/08 , H01L43/04 , H01L43/06 , H01L27/222
摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprise one or more GexNiFe layers, where at least one GexNiFe layer is disposed in contact with the BiSb layer. The GexNiFe layer has a thickness less than or equal to about 15 Å when used as an interlayer on top of the BiSb layer or less than or equal to 40 Å when used as a buffer layer underneath the BiSb. When the BiSb layer is doped with a dopant comprising a gas, a metal, a non-metal, or a ceramic material, the GexNiFe layer promotes the BiSb layer to have a (012) orientation. When the BiSb layer is undoped, the GexNiFe layer promotes the BiSb layer to have a (001) orientation. Utilizing the GexNiFe layer allows the crystal orientation of the BiSb layer to be selected.
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公开(公告)号：US20240144965A1
公开(公告)日：2024-05-02
申请号：US18228529
申请日：2023-07-31
发明人： Quang LE , Rohan Babu NAGABHIRAVA , Xiaoyong LIU , Brian R. YORK , Cherngye HWANG , Son T. LE , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC分类号： G11B5/39 , G11B5/11 , G11B2005/3996
摘要： The present disclosure generally relates to spin-orbit torque (SOT) devices comprising a bismuth antimony (BiSb) layer. The SOT devices further comprises a first shield, a BiSb layer disposed over the first shield (S1), a free layer (FL) disposed over the BiSb layer, and a second shield (S2) disposed over the FL. The S1, the FL, and the S2 are disposed at a media facing surface (MFS). The BiSb layer is recessed from the MFS a first distance of about 5 nm to about 20 nm. The FL has a length greater than the first distance. A notch and/or an insulation layer is disposed adjacent to the BiSb layer at the MFS. Current may be configured to flow vertically through the S2 to the FL, and horizontally from the FL to the BiSb layer. Current may be configured to flow vertically through the S2 to the S1.
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公开(公告)号：US20240006109A1
公开(公告)日：2024-01-04
申请号：US17855045
申请日：2022-06-30
发明人： Quang LE , Brian R. YORK , Cherngye HWANG , Xiaoyong LIU , Michael A. GRIBELYUK , Xiaoyu XU , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
IPC分类号： H01F10/32 , C30B29/52 , C23C8/12 , H01L27/22 , H01L43/04 , H01L43/06 , H01L43/10 , H01L43/14 , G11B5/39
CPC分类号： H01F10/324 , C30B29/52 , C23C8/12 , H01L27/222 , H01L43/04 , H01L43/06 , H01L43/10 , H01L43/14 , G11B5/3909 , G11B2005/0021
摘要： The present disclosure generally relates to spin-orbit torque (SOT) device comprising a first bismuth antimony (BiSb) layer having a (001) orientation. The SOT device comprises a first BiSb layer having a (001) orientation and a second BiSb layer having a (012) orientation. The first BiSb layer having a (001) orientation is formed by depositing an amorphous material selected from the group consisting of: B, Al, Si, SiN, Mg, Ti, Sc, V, Cr, Mn, Y, Zr, Nb, AlN, C, Ge, and combinations thereof, on a substrate, exposing the amorphous material to form an amorphous oxide surface on the amorphous material, and depositing the first BiSb layer on the amorphous oxide surface. By utilizing a first BiSb layer having a (001) orientation and a second BiSb having a (012) orientation, the signal through the SOT device is balanced and optimized to match through both the first and second BiSb layers.
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5.发明公开公开(公告)号：US20240112840A1
公开(公告)日：2024-04-04
申请号：US17956786
申请日：2022-09-29
发明人： Susumu OKAMURA , Quang LE , Brian R. YORK , Cherngye HWANG , Randy G. SIMMONS , Kuok San HO , Hisashi TAKANO
CPC分类号： H01F10/329 , C22C19/07 , G11B5/39 , H01L27/222 , H01L43/04 , H01L43/06 , H01L43/10 , G11B2005/0024
摘要： Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.
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公开(公告)号：US20230197132A1
公开(公告)日：2023-06-22
申请号：US17854568
申请日：2022-06-30
发明人： Quang LE , Cherngye HWANG , Brian R. YORK , Randy G. SIMMONS , Xiaoyong LIU , Kuok San HO , Hisashi TAKANO , Michael A. GRIBELYUK , Xiaoyu XU
CPC分类号： G11C11/161 , G11C11/1675 , G11C11/1673 , H01L43/08 , H01L43/10 , H01L43/04 , H01L43/14 , H01L43/06 , H01L27/222
摘要： The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.
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