公开(公告)号：US20240412759A1

公开(公告)日：2024-12-12

申请号：US18229772

申请日：2023-08-03

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Xiaoyong LIU ,  Michael A. GRIBELYUK ,  Son T. LE ,  Hisashi TAKANO

IPC: G11B5/39 ,  G11B5/187

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) device comprising a bismuth antimony (BiSb) layer. The SOT device comprises a seed layer and a BiSb layer having a (012) orientation. The seed layer comprises at least one of an amorphous/nanocrystalline material with a nearest neighbor x-ray diffraction peak with a d-spacing in the range of about 2.02 Å to about 2.20 Å; a polycrystalline material having a (111) orientation and an a-axis of about 3.53 Å to about 3.81 Å; and a polycrystalline material having a cubic (100) or tetragonal (001) orientation and an a-axis of about 4.1 Å to about 4.7 Å. When the seed layer comprises an amorphous material or a polycrystalline material having a (111), the BiSb layer is doped, and the seed layer has a lower a/c ratio than when the seed layer comprises polycrystalline material having a cubic (100) or tetragonal (001) orientation.

公开(公告)号：US20240112840A1

公开(公告)日：2024-04-04

申请号：US17956786

申请日：2022-09-29

Applicant: Western Digital Technologies, Inc.

Inventor： Susumu OKAMURA ,  Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Randy G. SIMMONS ,  Kuok San HO ,  Hisashi TAKANO

IPC: H01F10/32 ,  C22C19/07 ,  G11B5/39 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10

CPC classification number: H01F10/329 ,  C22C19/07 ,  G11B5/39 ,  H01L27/222 ,  H01L43/04 ,  H01L43/06 ,  H01L43/10 ,  G11B2005/0024

Abstract: Embodiments of the present disclosure relate to a cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices. In one or more embodiments, the CoB layer is part of a spin-orbit torque (SOT) device. In one or more embodiments, the SOT device is part of an SOT based sensor, an SOT based writer, a memory device (such as a magnetoresistive random-access memory (MRAM) device), and/or a storage device (such as a hard disk drive (HDD) or a tape drive). In one embodiment, an SOT device includes a seed layer, and a cap layer spaced from the seed layer. The SOT device includes a spin-orbit torque (SOT) layer, and a nano layer (NL) between the seed layer and the cap layer. The SOT device includes a cobalt-boron (CoB) layer between the seed layer and the cap layer, and the CoB layer is ferromagnetic.

公开(公告)号：US20230197132A1

公开(公告)日：2023-06-22

申请号：US17854568

申请日：2022-06-30

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Cherngye HWANG ,  Brian R. YORK ,  Randy G. SIMMONS ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO ,  Michael A. GRIBELYUK ,  Xiaoyu XU

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  H01L27/22

CPC classification number: G11C11/161 ,  G11C11/1675 ,  G11C11/1673 ,  H01L43/08 ,  H01L43/10 ,  H01L43/04 ,  H01L43/14 ,  H01L43/06 ,  H01L27/222

Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.

公开(公告)号：US20240420733A1

公开(公告)日：2024-12-19

申请号：US18740054

申请日：2024-06-11

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Sharon Swee Ling BANH ,  Hassan OSMAN ,  Hisashi TAKANO

IPC: G11B5/39 ,  G01R33/09 ,  G11C11/16 ,  H03K19/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/80

Abstract: The present disclosure generally relates to spintronic material stacks and devices. The various disclosed embodiments of YBiPt based spin orbit torque (SOT) stacks can be used for high temperature applications. Disclosed herein are various buffer and/or interlayer configurations in spintronic stacks that can promote growth of YBiPt in the (110) orientation, to promote a high spin Hall angle (SHA) in SOT applications. One embodiment is a spintronic stack comprising a buffer layer comprising one or more layers, the one or more layers each individually comprising: MgO (100), TiN (100), Ta, Nb, HfN, Ta3W2 (110), TaW2 (100), Ta3W2N, TaW2N, or heated YPt, an SOT layer comprising YBiPt in the (110) orientation, an interlayer comprising one or more of MgO, Ta3WN, TaW3N, Ta3W (110), TaW3 (100), YPt (110), NiFeGeN, NiAlN, NiAl, NiFeGe, NiAlGe, or HfN, and a ferromagnetic layer.

公开(公告)号：US20240240994A1

公开(公告)日：2024-07-18

申请号：US18355102

申请日：2023-07-19

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Rohan Babu NAGABHIRAVA ,  Kuok San HO ,  Hisashi TAKANO ,  Son T. LE ,  Nam Hai PHAM ,  Huy H. HO

IPC: G01K7/36 ,  G11B5/39

CPC classification number: G01K7/36 ,  G11B5/3906 ,  G11B2005/0021

Abstract: The present disclosure generally relates to temperature detection devices, comprising an antiferromagnetic (AFM) layer a ferromagnetic (FM) layer disposed on the AFM layer and a spin-orbit torque (SOT) material layer disposed on the FM layer. The SOT material layer may comprise: a SOT material portion; a SOT material portion and an insulating material portion; or a plurality of SOT material portions and a plurality of insulating material portions. The temperature detection devices may also have a second FM layer disposed on the SOT material layer. The temperature detection devices may also have a second AFM layer disposed on the second FM layer. In another embodiment, the temperature detection devices may also have a heat sink.

公开(公告)号：US20230121375A1

公开(公告)日：2023-04-20

申请号：US18082721

申请日：2022-12-16

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Brian R. YORK ,  Cherngye HWANG ,  Susumu OKAMURA ,  Xiaoyong LIU ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/39 ,  H10B61/00 ,  H10N52/80 ,  H01F10/32 ,  H10N50/85 ,  H10N52/00 ,  G11C11/16 ,  G11B5/31

Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.

公开(公告)号：US20220415345A1

公开(公告)日：2022-12-29

申请号：US17867477

申请日：2022-07-18

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Hongquan JIANG ,  Cherngye HWANG ,  Hisashi TAKANO

IPC: G11B5/39

Abstract: The present disclosure relates to read head apparatus, and methods of forming read head apparatus, for magnetic storage devices, such as magnetic tape drives (e.g., tape drives). In one implementation, a read head for magnetic storage devices includes a lower shield, one or more upper shields, one or more lower leads, and a plurality of upper leads. The read head includes a plurality of read sensors, each read sensor of the plurality of read sensors including a first antiferromagnetic (AFM) layer. The read head includes a plurality of soft bias side shields disposed between and outwardly of the plurality of read sensors. The read head includes one or more second AFM layers disposed above the first AFM layer and the plurality of soft bias side shields along a downtrack direction.

公开(公告)号：US20220005498A1

公开(公告)日：2022-01-06

申请号：US17395291

申请日：2021-08-05

Applicant: Western Digital Technologies, Inc.

Inventor： Quang LE ,  Xiaoyong LIU ,  Zhigang BAI ,  Zhanjie LI ,  Kuok San HO ,  Hisashi TAKANO

IPC: G11B5/37 ,  H01L43/04 ,  H01L43/06 ,  G11B5/39 ,  H01L43/14

Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).

公开(公告)号：US20250006221A1

公开(公告)日：2025-01-02

申请号：US18229785

申请日：2023-08-03

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Cherngye HWANG ,  Brian R. YORK ,  Son T. LE ,  Sharon Swee Ling BANH ,  Maki MAEDA ,  Fan TUO ,  Yu TAO ,  Hisashi TAKANO ,  Nam Hai PHAM

IPC: G11B5/39

Abstract: The present disclosure generally relates to a magnetic media drive comprising a magnetic recording head. The magnetic recording head comprises a main pole disposed at a media facing surface (MFS), a shield disposed at the MFS, a spin blocking layer disposed between the shield and the main pole, at least one non-magnetic layer disposed between the main pole and the shield, the at least one non-magnetic layer being disposed at the MFS, and at least one spin orbit torque (SOT) layer disposed over the at least one non-magnetic layer, the SOT layer being recessed a distance of about 20 nm to about 100 nm from the MFS. A ratio of a length of the SOT layer to a thickness of the SOT layer is greater than 1. The at least one SOT layer comprises BiSb.

公开(公告)号：US20240423098A1

公开(公告)日：2024-12-19

申请号：US18645189

申请日：2024-04-24

Applicant: Western Digital Technologies, Inc. ,  Tokyo Institute of Technology

Inventor： Quang LE ,  Xiaoyong LIU ,  Brian R. YORK ,  Cherngye HWANG ,  Hisashi TAKANO ,  Nam Hai PHAM

IPC: H10N50/85 ,  H03K19/18 ,  H10N52/80

Abstract: The present disclosure generally relate to an integrated circuit utilizing spin orbital-spin orbital (SO-SO) logic. The integrated circuit comprises a plurality of SO-SO logic cells, where each SO-SO logic cell comprises a first spin orbit torque (SOT1) layer, a second spin orbit torque (SOT2) layer, and a ferromagnetic layer disposed between the SOT1 and SOT2 layer. Each SO-SO logic cell is configured for: a first current path that is in plane to a plane of the SOT1 layer, and a second current path that is perpendicular to a plane of the SOT2 layer, the second current path being configured to extend into the ferromagnetic layer. The integrated circuit further comprises a common voltage source connected to each SOT device, and one or more interconnects disposed between adjacent SOT devices of the plurality of SOT devices, the one or more interconnects connecting the adjacent SOT devices together.