公开(公告)号：US20240290390A1

公开(公告)日：2024-08-29

申请号：US18225315

申请日：2023-07-24

申请人： Western Digital Technologies, Inc.

发明人： Yanjie Wang ,  Xiaoyu Che ,  Yi Song ,  Guirong Liang

IPC分类号： G11C16/10 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04

CPC分类号： G11C16/107 ,  G06F3/0611 ,  G06F3/0658 ,  G06F3/0679 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0483

摘要： A method for performing a programming operation with respect to a memory structure. The method comprises: (1) initiating a programming operation with respect to multiple program states of a non-volatile memory structure; (2) programming each of the multiple program states according to a programming order; and (3) after completing the programming of each of the multiple program states, programming an erase state as the final program state of the programming order.

公开(公告)号：US20240363167A1

公开(公告)日：2024-10-31

申请号：US18227175

申请日：2023-07-27

申请人： Western Digital Technologies, Inc.

发明人： Sisi Yang ,  Yanjie Wang

IPC分类号： G11C16/10 ,  G11C16/04 ,  G11C16/14 ,  G11C16/34

CPC分类号： G11C16/102 ,  G11C16/0433 ,  G11C16/14 ,  G11C16/3459

摘要： A memory apparatus and method of operation are provided. The apparatus includes memory cells each connected to one of a plurality of word lines and disposed in memory holes. The memory cells are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means is coupled to the plurality of word lines and the memory holes and is configured to program the memory cells in a program operation. During the program operation, the control means programs the memory cells connected to at least one particular word line of the plurality of word lines using a first programming technique while programming the memory cells connected to plurality of word lines other than the at least one particular word line using a second programming technique different than the first programming technique.