公开(公告)号：US20240282358A1

公开(公告)日：2024-08-22

申请号：US18224839

申请日：2023-07-21

申请人： Western Digital Technologies, Inc.

发明人： Yi Song ,  Jiahui Yuan ,  Deepanshu Dutta

IPC分类号： G11C11/408 ,  G11C5/14 ,  G11C11/4096

CPC分类号： G11C11/4085 ,  G11C5/145 ,  G11C11/4096

摘要： A storage device is disclosed. The storage device is configured to: determine data states for a first set of memory cells of a first neighboring word line of the and a second set of memory cells of a second neighboring word line, the first and the second neighboring word lines being adjacent to a selected word line; identify a zone of a plurality of zones for each data state combination of the data states, each data state combination comprising a data state of a memory cell of the first set of memory cells and a data state of a memory cell of the second set of memory cells, each zone of the plurality of zones corresponding to a bit line clamping voltage; and perform a read operation on the selected word line including applying each bit line clamping voltage corresponding to any zones identified.

公开(公告)号：US20240290390A1

公开(公告)日：2024-08-29

申请号：US18225315

申请日：2023-07-24

申请人： Western Digital Technologies, Inc.

发明人： Yanjie Wang ,  Xiaoyu Che ,  Yi Song ,  Guirong Liang

IPC分类号： G11C16/10 ,  G06F3/06 ,  G11C11/56 ,  G11C16/04

CPC分类号： G11C16/107 ,  G06F3/0611 ,  G06F3/0658 ,  G06F3/0679 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/0483

摘要： A method for performing a programming operation with respect to a memory structure. The method comprises: (1) initiating a programming operation with respect to multiple program states of a non-volatile memory structure; (2) programming each of the multiple program states according to a programming order; and (3) after completing the programming of each of the multiple program states, programming an erase state as the final program state of the programming order.