-
公开(公告)号：US06936542B2
公开(公告)日：2005-08-30
申请号：US10022317
申请日：2001-12-18
IPC分类号： C09C1/68 , C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译： 一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和电介质材料的方法，该方法包括第一和第二浆料。 第一种浆料对铜的去除率高，在阻隔材料上的去除率低。 第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。 第一和第二浆料至少包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。
-
公开(公告)号：US06527819B2
公开(公告)日：2003-03-04
申请号：US10022308
申请日：2001-12-18
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
-
公开(公告)号：US06409781B1
公开(公告)日：2002-06-25
申请号：US09562298
申请日：2000-05-01
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
-
公开(公告)号：US07427567B2
公开(公告)日：2008-09-23
申请号：US11145807
申请日：2005-06-06
IPC分类号： H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译： 一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和介电材料的方法，其包括第一和第二浆料。 第一种浆料对铜的去除率高，在阻隔材料上的去除率低。 第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。 第一和第二浆料可以包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。
-
5.发明授权Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权金属及相关材料的化学机械抛光组合物及其使用方法公开(公告)号：US06692546B2
公开(公告)日：2004-02-17
申请号：US09932415
申请日：2001-08-17
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09G102
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
摘要翻译： 一种化学机械抛光浆料组合物和使用该浆料组合物抛光铜，阻挡材料和电介质材料的方法，其包括第一和第二步浆料。 第一步浆料对铜的去除率高，阻隔材料的去除率低。 第二步浆料对阻隔材料的去除率高，铜和介电材料的去除率低。 第一浆液至少包含有机聚合物研磨剂。
-
公开(公告)号：US07029373B2
公开(公告)日：2006-04-18
申请号：US09929564
申请日：2001-08-14
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
-
公开(公告)号：US20060084272A1
公开(公告)日：2006-04-20
申请号：US11145807
申请日：2005-06-06
申请人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
发明人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译： 一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和介电材料的方法，其包括第一和第二浆料。 第一种浆料对铜的去除率高，在阻隔材料上的去除率低。 第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。 第一和第二浆料可以包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。
-
8.发明申请公开(公告)号：US20060160475A1
公开(公告)日：2006-07-20
申请号：US11386307
申请日：2006-03-22
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas Baum , David Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas Baum , David Bernhard , Deepak Verma
IPC分类号： B24B7/30
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.039 秒)
