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公开(公告)号：US06936542B2
公开(公告)日：2005-08-30
申请号：US10022317
申请日：2001-12-18
IPC分类号： C09C1/68 , C09G1/02 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译： 一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和电介质材料的方法，该方法包括第一和第二浆料。 第一种浆料对铜的去除率高，在阻隔材料上的去除率低。 第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。 第一和第二浆料至少包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。
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公开(公告)号：US06527819B2
公开(公告)日：2003-03-04
申请号：US10022308
申请日：2001-12-18
IPC分类号： C09G102
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
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公开(公告)号：US06409781B1
公开(公告)日：2002-06-25
申请号：US09562298
申请日：2000-05-01
IPC分类号： C09K314
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that comprises a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries at least comprise silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
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4.发明授权pH buffered compositions useful for cleaning residue from semiconductor substrates 失效用于清洗半导体衬底残留物的pH缓冲组合物公开(公告)号：US06773873B2
公开(公告)日：2004-08-10
申请号：US10105704
申请日：2002-03-25
IPC分类号： G03F742
CPC分类号： H01L21/02063 , C11D7/265 , C11D7/28 , C11D11/0047 , G03F7/425 , H01L21/02071
摘要： A semi-aqueous cleaning formulation useful for removing particles from semiconductor wafer substrates formed during a dry etching process for semiconductor devices, the cleaning formulation comprising a buffering system a polar organic solvent, and a fluoride source.
摘要翻译： 一种用于从用于半导体器件的干法蚀刻工艺中形成的半导体晶片衬底中去除颗粒的半水性清洁配方，所述清洁配方包括缓冲系统，极性有机溶剂和氟化物源。
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5.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US08293694B2
公开(公告)日：2012-10-23
申请号：US12581843
申请日：2009-10-19
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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6.发明申请AQUEOUS CLEANING COMPOSITION CONTAINING COPPER-SPECIFIC CORROSION INHIBITOR FOR CLEANING INORGANIC RESIDUES ON SEMICONDUCTOR SUBSTRATE 有权含有特殊腐蚀抑制剂的清洁组合物，用于清洁半导体基板上的无机残留物公开(公告)号：US20100035785A1
公开(公告)日：2010-02-11
申请号：US12581843
申请日：2009-10-19
IPC分类号： C11D7/32
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35重量％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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7.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US07605113B2
公开(公告)日：2009-10-20
申请号：US11135892
申请日：2005-05-24
IPC分类号： H01L21/306
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-35％ 氟化物源，20-60重量％ 有机胺，0.1-40重量％ 含氮组分，例如含氮羧酸或亚胺，20-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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8.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US06967169B2
公开(公告)日：2005-11-22
申请号：US10861158
申请日：2004-06-04
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D11/00 , C11D17/08 , G03F7/42 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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9.发明授权Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物公开(公告)号：US06755989B2
公开(公告)日：2004-06-29
申请号：US09818073
申请日：2001-03-27
IPC分类号： C09K1300
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译： 半导体晶片清洁配方，包括1-21％ 氟化物源，20-55重量％ 有机胺，0.5-40重量％ 含氮组分，例如含氮羧酸或亚胺，23-50重量％ 水，0-21重量％。 金属螯合剂。 该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。
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10.发明授权Boric acid containing compositions for stripping residues from semiconductor substrates 有权含硼酸的组合物用于从半导体衬底剥离残留物公开(公告)号：US06492310B2
公开(公告)日：2002-12-10
申请号：US09801543
申请日：2001-03-07
申请人： William A. Wojtczak , George Guan , Long Nguyen
发明人： William A. Wojtczak , George Guan , Long Nguyen
IPC分类号： C11D162
CPC分类号： G03F7/425 , G03F7/423 , G03F7/427 , H01L21/02052 , H01L21/31116
摘要： The present invention comprises formulations for stripping wafer residues which originate from a halogen based plasma metal etching followed by oxygen plasma ashing. The formulations contain the following general components (percentages are by weight): Boric Acid 2-17% Organic amine or mixture of amines 35-70% Water 20-45% Glycol solvent (optional) 0-5% Chelating agent (optional) 0-17% The preferred amines are: Monoethanolamine (MEA) Triethanolamine (TEA).
摘要翻译： 本发明包括用于剥离源自卤素等离子体金属蚀刻的氧化硅等离子体灰化的晶片残留物的制剂。 制剂含有以下通用组分（百分比以重量计）：优选的胺是：单乙醇胺（MEA）三乙醇胺（TEA）。
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