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1.发明授权Active element modified platinum aluminide diffusion coating and CVD coating method 有权活性元素改性的铂铝化物扩散涂层和CVD涂层法公开(公告)号：US06291014B1
公开(公告)日：2001-09-18
申请号：US09392766
申请日：1999-09-07
IPC分类号： C23C1608
CPC分类号： C23C28/321 , C23C10/02 , C23C10/28 , C23C16/08 , C23C28/325 , C23C28/345 , C23C28/3455 , Y02T50/67 , Y10S428/938 , Y10T428/1275 , Y10T428/12875 , Y10T428/12931
摘要： A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.
摘要翻译： 在镍或钴基超级合金基材上CVD外延生长的铂铝化物扩散涂层，其中铂改性的铝化物扩散涂层被修饰为包括硅，铪和任选的锆和/或其它活性元素（例如Ce，La，Y等） ），其浓度为涂层的外添加剂（Ni，Pt）（Al，Si）层的约0.01重量％至约8重量％。 特别的涂层在外添加层中包含约0.01重量％至小于2重量％的硅，铪和锆，优选Hf / Si比小于约1，当Zr也存在时，Hf + Zr / Si比小于约1.提供一种涂层微观结构，其特征在于与衬底相邻的内扩散区或区域，以及包括硅化铪第二相颗粒或区域的外添加剂（Ni，Pt）（Al，Si） 分散在涂层的外部添加剂层中。
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2.发明授权Active element modified platinum aluminide diffusion coating and CVD coating method 失效活性元素改性的铂铝化物扩散涂层和CVD涂层法
公开(公告)号：US5989733A
公开(公告)日：1999-11-23
申请号：US685380
申请日：1996-07-23
IPC分类号： C23C10/28 , C23C10/02 , C23C10/08 , C23C14/14 , C23C16/06 , C23C16/08 , C23C26/00 , C23C28/00 , B32B15/00
CPC分类号： C23C28/321 , C23C10/02 , C23C10/28 , C23C16/08 , C23C28/325 , C23C28/345 , C23C28/3455 , Y02T50/67 , Y10S428/938 , Y10T428/1275 , Y10T428/12875 , Y10T428/12931
摘要： A CVD outwardly grown platinum aluminide diffusion coating on a nickel or cobalt base superalloy substrate wherein the platinum modified aluminide diffusion coating is modified to include silicon, hafnium, and optionally zirconium and/or other active elements (e.g. Ce, La, Y, etc.) each in a concentration of about 0.01 weight % to about 8 weight % of the outer additive (Ni,Pt)(Al,Si) layer of the coating. A particular coating includes about 0.01 weight % to less than 2 weight % of each of silicon, hafnium, and zirconium in the outer additive layer, preferably with a Hf/Si ratio less than about 1 and, when Zr also is present, a Hf+Zr/Si ratio of less than about 1. A coating microstructure is provided characterized by an inner diffusion zone or region adjacent the substrate and the outer additive (Ni,Pt)(Al,Si) layer including hafnium silicide second phase particles or regions dispersed throughout the outer additive layer of the coating.
摘要翻译： 在镍或钴基超级合金基材上CVD外延生长的铂铝化物扩散涂层，其中铂改性的铝化物扩散涂层被修饰为包括硅，铪和任选的锆和/或其它活性元素（例如Ce，La，Y等） ），其浓度为涂层的外添加剂（Ni，Pt）（Al，Si）层的约0.01重量％至约8重量％。 特别的涂层在外添加层中包含约0.01重量％至小于2重量％的硅，铪和锆，优选Hf / Si比小于约1，当Zr也存在时，Hf + Zr / Si比小于约1.提供一种涂层微观结构，其特征在于与衬底相邻的内扩散区或区域，以及包括硅化铪第二相颗粒或区域的外添加剂（Ni，Pt）（Al，Si） 分散在涂层的外部添加剂层中。
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公开(公告)号：US5658614A
公开(公告)日：1997-08-19
申请号：US330694
申请日：1994-10-28
摘要： A method of improving the oxidation resistance of a platinum modified aluminide coating formed on a nickel base superalloy substrate, comprises providing a platinum layer on the substrate, heating the substrate in a coating retort to a temperature of at least about 1000.degree. C., forming external of the coating retort a high purity coating gas comprising hydrogen and aluminum trichloride, and introducing the coating gas into the coating retort to contact the heated substrate to form an outwardly grown, single phase [(Ni,Pt)]Al] platinum modified aluminide coating having reduced concentration of at least one of a substrate substitutional alloying element and a surface active tramp element selected from at least one of B, P, and S in said coating as compared to a platinum modified aluminide coating formed at a lower temperature.
摘要翻译： 一种提高形成在镍基超合金基底上的铂改性铝化物涂层的抗氧化性的方法包括在基底上提供铂层，将基底在涂层蒸煮中加热到至少约1000℃的温度，形成 涂层的外部将包含氢和三氯化铝的高纯度涂层气体蒸煮，并将涂覆气体引入涂层蒸馏器中以接触加热的底物以形成向外生长的单相[（Ni，Pt）] Al]铂改性铝化物 与在较低温度下形成的铂改性铝化物涂层相比，所述涂层中的至少一种基质替代合金元素和选自B，P和S中的至少一种的表面活性杂质元素的浓度降低。
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4.发明授权CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating 有权A1和一种或多种反应性（吸气）元素的CVD共沉积形成保护性铝化物涂层公开(公告)号：US06849132B2
公开(公告)日：2005-02-01
申请号：US10645292
申请日：2003-08-20
IPC分类号： C23C10/14 , C23C16/08 , C23C16/448 , C23C10/28
CPC分类号： C23C16/08 , C23C10/14 , C23C16/4488 , Y10T428/12493 , Y10T428/12736 , Y10T428/1275 , Y10T428/12944
摘要： CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.
摘要翻译： 形成包含少量浓度的分散于其中的表面活性杂质的反应性吸杂元素的CVD铝化物涂层，以提高耐氧化性。 铝化物涂层通过使用涂覆气体的Al和通过CVD覆盖在基底上的吸气元件形成，所述吸附元件根据特定吸气元件所需的氯化温度在涂层蒸馏器的外部或内部产生。
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5.发明授权CVD condeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating 有权CVD沉积A1和一种或多种反应性（吸气）元素以形成保护性铝化物涂层公开(公告)号：US07901788B2
公开(公告)日：2011-03-08
申请号：US10645707
申请日：2003-08-20
IPC分类号： B32B15/04
CPC分类号： C23C16/08 , C23C10/14 , C23C16/4488 , Y10T428/12493 , Y10T428/12736 , Y10T428/1275 , Y10T428/12944
摘要： CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.
摘要翻译： 形成包含少量浓度的分散于其中的表面活性杂质的反应性吸杂元素的CVD铝化物涂层，以提高耐氧化性。 铝化物涂层通过使用涂覆气体的Al和通过CVD覆盖在基底上的吸气元件形成，所述吸附元件根据特定吸气元件所需的氯化温度在涂层蒸馏器的外部或内部产生。
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6.发明授权CVD codeposition of A1 and one or more reactive (gettering) elements to form protective aluminide coating 失效A1和一种或多种反应性（吸气）元素的CVD共沉积形成保护性铝化物涂层公开(公告)号：US06689422B1
公开(公告)日：2004-02-10
申请号：US08197497
申请日：1994-02-16
IPC分类号： C23C1600
CPC分类号： C23C16/08 , C23C10/14 , C23C16/4488 , Y10T428/12493 , Y10T428/12736 , Y10T428/1275 , Y10T428/12944
摘要： CVD aluminide coatings including a small concentration of a reactive, gettering element for surface active impurities dispersed therein are formed for improved oxidation resistance. The aluminide coatings are formed by CVD codeposition of Al and the gettering element on the substrate using coating gases for the gettering element generated either outside or inside the coating retort depending on the chlorination temperature needed for the particular gettering element.
摘要翻译： 形成包含少量浓度的分散于其中的表面活性杂质的反应性吸杂元素的CVD铝化物涂层，以提高耐氧化性。 铝化物涂层通过使用涂覆气体的Al和通过CVD覆盖在基底上的吸气元件形成，所述吸附元件根据特定吸气元件所需的氯化温度在涂层蒸馏器的外部或内部产生。
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公开(公告)号：US5407704A
公开(公告)日：1995-04-18
申请号：US112101
申请日：1993-08-26
CPC分类号： B01J19/32 , B01J3/006 , C23C16/4412 , B01J2219/3221 , B01J2219/32213 , B01J2219/32231 , B01J2219/32237 , B01J2219/32408 , Y10S165/913
摘要： Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom. An enclosure is disposed around the condensing structure and configured to direct the spent gas stream from the coating region to flow through the condensing structure where the excess, unreacted gaseous reactant can condense before entering the outlet.
摘要翻译： 化学气相沉积设备包括一个反应器，该反应器具有一个具有用于涂覆基底的涂层区域和与该涂层区域连通的排气区域的腔室。 涂覆区域包括用于引入气态反应物流以通过基底以与其反应以在其上形成涂层和废气流的入口。 排气区域包括用于从涂覆区域排出废气流的出口。 衬底被支撑在涂覆区域中，并通过合适的支撑装置和加热装置加热到升高的反应温度。 冷凝组件设置在排气区域中，用于在进入出口之前将来自废气流的过量未反应的气体反应物冷凝。 冷凝组件包括设置在排气区域中的高表面积，有孔结构，其中废气流的温度被充分还原以从其中冷凝过量的未反应的气态反应物。 外壳围绕冷凝结构设置并且被配置为引导来自涂覆区域的废气流流过冷凝结构，其中过量的未反应的气态反应物可在进入出口之前冷凝。
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公开(公告)号：US5261963A
公开(公告)日：1993-11-16
申请号：US803340
申请日：1991-12-04
CPC分类号： B01J19/32 , B01J3/006 , C23C16/4412 , B01J2219/3221 , B01J2219/32213 , B01J2219/32231 , B01J2219/32237 , B01J2219/32408 , Y10S165/913
摘要： Chemical vapor deposition apparatus comprises a reactor having a chamber with a coating region for coating a substrate and an exhaust region communicating with the coating region. The coating region includes an inlet for introduction of a gaseous reactant stream to pass over the substrate to react therewith to form a coating thereon and a spent gas stream. The exhaust region includes an outlet for exhausting the spent gas stream from the coating region. The substrate is supported in the coating region and heated to an elevated reaction temperature by suitable support means and heating means. A condensing assembly is disposed in the exhaust region for condensing excess, unreacted gaseous reactant from the spent gas stream before entry into the outlet. The condensing assembly includes a high surface area, apertured structure disposed in the exhaust region where the temperature of the spent gas stream is sufficiently reduced to condense excess, unreacted gaseous reactant therefrom. An enclosure is disposed around the condensing structure and configured to direct the spent gas stream from the coating region to flow through the condensing structure where the excess, unreacted gaseous reactant can condense before entering the outlet.
摘要翻译： 化学气相沉积设备包括一个反应器，该反应器具有一个具有用于涂覆基底的涂层区域和与该涂层区域连通的排气区域的腔室。 涂覆区域包括用于引入气态反应物流以通过基底以与其反应以在其上形成涂层和废气流的入口。 排气区域包括用于从涂覆区域排出废气流的出口。 衬底被支撑在涂覆区域中，并通过合适的支撑装置和加热装置加热到升高的反应温度。 冷凝组件设置在排气区域中，用于在进入出口之前将来自废气流的过量未反应的气体反应物冷凝。 冷凝组件包括设置在排气区域中的高表面积，有孔结构，其中废气流的温度被充分还原以从其中冷凝过量的未反应的气态反应物。 外壳围绕冷凝结构设置并且构造成引导来自涂覆区域的废气流流过冷凝结构，其中过量的未反应的气态反应物可在进入出口之前冷凝。
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公开(公告)号：US5462013A
公开(公告)日：1995-10-31
申请号：US143455
申请日：1993-10-26
CPC分类号： C23C16/042 , C23C16/44
摘要： A chemical vapor deposition (CVD) apparatus comprises a reactor having a coating chamber at elevated temperature, means for supporting substrates to be coated at different zones in the coating chamber, and means for supplying a gaseous reactant stream to the chamber for distribution to the coating zones in a manner that the stream is heated to substantially different temperatures at different coating zones. Reactivity-altering material is disposed at the coating zones for contact by the reactant stream supplied thereto before the reactant stream contacts a substrate at the zones. The reactivity-altering material includes a composition that differs between coating zones in dependence on the reactant stream temperatures at the coating zones as necessary to alter the reactivity of the reactant (i.e., activity of a particular chemical specie of the reactant stream) stream at the coating zones in a manner to provide substantially the same reactant reactivity at all coating zones. CVD coatings are thereby produced on the substrates that exhibit improved uniformity in composition and thickness from one substrate to the next at the different zones.
摘要翻译： 化学气相沉积（CVD）装置包括在升高的温度下具有涂覆室的反应器，用于支撑待涂覆在涂覆室中的不同区域的基底的装置，以及用于将气态反应物流供应到室以分配到涂层的装置 区域以将流在不同涂层区域加热至基本不同的温度。 反应性改变材料设置在涂层区域处，以在反应物流与区域之间的基底接触之前由供应的反应物流接触。 反应性改变材料包括根据需要改变反应物的反应性（即，反应物流的特定化学物质的活性）流在涂层区域的反应物流温度在涂层区域之间不同的组合物 涂覆区域以在所有涂覆区域提供基本上相同的反应物反应性的方式。 因此，在基板上产生CVD涂层，其在不同区域表现出从一个基板到下一个基板的组成和厚度均匀性的改善。
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公开(公告)号：US5264245A
公开(公告)日：1993-11-23
申请号：US802257
申请日：1991-12-04
CPC分类号： C23C16/042 , C23C16/44
摘要： A chemical vapor deposition (CVD) method utilizing an apparatus comprising a reactor having a coating chamber at elevated temperature, means for supporting substrates to be coated at different zones in the coating chamber, and means for supplying a gaseous reactant stream to the chamber for distribution to the coating zones in a manner that the stream is heated to substantially different temperatures at different coating zones. Reactivity-altering material is disposed at the coating zones for contact by the reactant stream supplied thereto before the reactant stream contacts a substrate at the zones. The reactivity-altering material includes a composition that differs between coating zones in dependence on the reactant stream temperatures at the coating zones as necessary to alter the reactivity of the reactant (i.e., activity of a particular chemical specie of the reactant stream) stream at the coating zones in a manner to provide substantially the same reactant reactivity at all coating zones. CVD coatings are thereby produced on the substrates that exhibit improved uniformity in composition and thickness from one substrate to the next at the different zones.
摘要翻译： 使用包括在升高的温度下具有涂布室的反应器的装置的化学气相沉积（CVD）方法，用于支撑待涂布在涂覆室中的不同区域的基底的装置，以及用于将气态反应物流供应到室以供分配的装置 以使得流在不同涂层区域被加热到基本不同的温度的方式涂覆到涂层区域。 反应性改变材料设置在涂层区域处，以在反应物流与区域之间的基底接触之前由供应的反应物流接触。 反应性改变材料包括根据需要改变反应物的反应性（即，反应物流的特定化学物质的活性）流在涂层区域的反应物流温度在涂层区域之间不同的组合物 涂覆区域以在所有涂覆区域提供基本上相同的反应物反应性的方式。 因此，在基板上产生CVD涂层，其在不同区域表现出从一个基板到下一个基板的组成和厚度均匀性的改善。
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