公开(公告)号：US4015279A

公开(公告)日：1977-03-29

申请号：US581042

申请日：1975-05-27

申请人： William Edward Ham

发明人： William Edward Ham

IPC分类号： H01L23/31 ,  H01L27/12 ,  H01L29/786 ,  H01L29/78

CPC分类号： H01L29/78609 ,  H01L23/3171 ,  H01L23/3185 ,  H01L27/12 ,  H01L29/78606 ,  H01L2924/0002 ,  Y10S148/15

摘要： An MOS mesa transistor wherein the sidewalls of the mesa are electrically isolated from a device formed on the principal surface of the mesa, is provided. The mesa is comprised of a source and a drain which do not extend to a sidewall of the mesa. The source and the drain are surrounded by a band of semiconductor material which is a portion of the mesa and which electrically isolates the source and the drain from the sidewalls of the mesa.

摘要翻译： 提供了一种MOS台面晶体管，其中台面的侧壁与形成在台面的主表面上的器件电隔离。 台面由源极和漏极组成，其不延伸到台面的侧壁。 源极和漏极被作为台面的一部分的半导体材料带包围，并且将源极和漏极与台面的侧壁电隔离。

公开(公告)号：US4103228A

公开(公告)日：1978-07-25

申请号：US797401

申请日：1977-05-16

申请人： William Edward Ham

发明人： William Edward Ham

IPC分类号： G01R27/14 ,  G01R31/02 ,  G01R31/28 ,  G01R27/02

CPC分类号： G01R27/14 ,  G01R31/024 ,  G01R31/2853

摘要： The method is used to determine whether holes etched into a dielectric layer which has been formed on a surface of a semiconductor wafer are open. A plurality of specimen holes are formed in a selected portion of the wafer simultaneously with the formation of the holes to be tested. The specimen holes are then contacted with an electrolytic probe, and the wafer is contacted with an output probe. The resistance, through the wafer, between the electrolytic probe and the output probe is determined. Since the resistance is related to the amount of dielectric material remaining in the hole, a non-destructive determination may be made as to whether the device should be subjected to additional etching.

公开(公告)号：US4079522A

公开(公告)日：1978-03-21

申请号：US726058

申请日：1976-09-23

申请人： William Edward Ham

发明人： William Edward Ham

IPC分类号： C30B33/00 ,  H01L21/306 ,  F26B3/34

CPC分类号： H01L21/02046 ,  C30B33/00

摘要： A semiconductor wafer is cleansed of loose foreign surface matter and chemical impurities near the surface in an apparatus which passes superheated steam over the wafer. Condensate is permitted to form and drip off the wafer. After rising above 100.degree. C the wafer becomes dry, and is removed from the apparatus and then permitted to cool.

摘要翻译： 半导体晶片在通过晶片上的过热蒸汽的设备中清洁表面附近的疏松的异物表面物质和化学杂质。 允许冷凝液形成和滴落晶片。 在100℃升高之后，晶片变干，从设备中取出，然后冷却。

公开(公告)号：US4054895A

公开(公告)日：1977-10-18

申请号：US754689

申请日：1976-12-27

申请人： William Edward Ham

发明人： William Edward Ham

IPC分类号： H01L29/786 ,  H01L29/78

CPC分类号： H01L29/78609 ,  H01L29/78612 ,  H01L29/78657 ,  Y10S148/15

摘要： Instabilities in the leakage current and threshold voltage of a field effect transistor on an insulator substrate, at both room temperature and after operation at relatively high temperatures (150.degree. C), are substantially reduced by selectively doping edge regions adjacent the transverse side surfaces of the channel region of the field effect transistor, wherein the breakdown voltage of the channel-to-drain junction is substantially increased. Atoms are placed in these edge regions to provide therein a carrier concentration of at least 5 .times. 10.sup.16 atoms-cm.sup.-3 of the opposite conductivity type to that of the source and drain regions. The doped edge region extends partly across said channel region and extends fully across the side surface at the end of the source region.

摘要翻译： 通过选择性地掺杂邻近横向侧表面的边缘区域，在室温下和在相对较高温度（150℃）下操作之后的绝缘体衬底上的场效应晶体管的漏电流和阈值电压的不稳定性大大降低 沟道区域，其中沟道至漏极结的击穿电压显着增加。 将原子放置在这些边缘区域中以在其中提供与源极和漏极区相反的导电类型的至少5×1016个原子-cm-3的载流子浓度。 掺杂边缘区域部分地延伸穿过所述沟道区域并且在源极区域的端部处完全跨越侧表面延伸。