-
公开(公告)号：US5358926A
公开(公告)日：1994-10-25
申请号：US98838
申请日：1993-07-29
CPC分类号： H01L39/2448 , C23C14/087 , H01L39/143 , H01L39/2451 , H01P1/203 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/734 , Y10S505/735
摘要： Novel articles are provided of thin super-conductive thallium-based copper oxide layers on inorganic, usually crystalline substrates. Novel methods are provided for ease of producing such articles, particularly involving sol-gel techniques and laser ablation. The articles have a highly oriented superconductive thallium-based copper oxide film, particularly epitaxial, with high superconductive transition temperatures and desirable electrical properties. The subject articles find use in a wide variety of electronic applications, particularly in microwave and millimeter wave devices.
摘要翻译： 在无机，通常是结晶的基底上提供了薄的超导导铊基氧化铜层的新型制品。 提供了用于容易地生产这种制品的新方法，特别是涉及溶胶 - 凝胶技术和激光烧蚀。 这些制品具有高取向的超导铊基氧化铜膜，特别是外延，具有高超导转变温度和所需的电性能。 主题文章用于各种电子应用中，特别是在微波和毫米波装置中。
-
2.发明授权Metalorganic deposition method for forming epitaxial thallium-based copper oxide superconducting films 失效用于形成外延铊基氧化铜超导薄膜的金属有机沉积方法
公开(公告)号：US5071830A
公开(公告)日：1991-12-10
申请号：US238919
申请日：1988-08-31
CPC分类号： H01L39/2448 , C23C14/087 , H01L39/143 , H01L39/2451 , H01P1/203 , Y10S428/93 , Y10S505/701 , Y10S505/702 , Y10S505/734 , Y10S505/735
摘要： An epitaxial thallium-based copper oxide superconducting film is formed on a crystalline substrate by metalorganic deposition which comprises forming a film of carboxylate soap solution on said substrate, prepyrolyzing said film at a temperature of 350.degree. C. or less and pyrolyzing said film at a temperature of 800.degree.900.degree. C. in the presence of oxygen and an overpressure of thallium for a sufficient time to produce said epitaxial superconducting film.
摘要翻译： 外延铊基氧化铜超导膜是通过金属有机沉积在晶体基底上形成的，其包括在所述基底上形成羧酸盐皂溶液膜，在350℃或更低的温度下预分解所述膜，并在 温度为800-900℃，在氧的存在下和铊的过压足够的时间以产生所述外延超导膜。
-
3.发明授权Controlled thallous oxide evaporation for thallium superconductor films and reactor design 失效用于铊超导体膜的控制的沙丘氧化物蒸发和反应器设计
公开(公告)号：US5139998A
公开(公告)日：1992-08-18
申请号：US516078
申请日：1990-04-27
IPC分类号： C01G1/00 , C01G15/00 , C23C14/08 , C23C14/34 , C23C14/54 , C23C14/58 , C30B11/00 , C30B23/02 , C30B33/00 , F27B17/00 , H01L39/14 , H01L39/24 , H01P1/203
CPC分类号： C23C14/087 , C23C14/541 , C23C14/58 , C23C14/5806 , C23C14/5866 , C30B11/00 , C30B23/002 , C30B23/02 , C30B29/22 , C30B29/225 , C30B33/00 , H01L39/143 , H01L39/2422 , H01L39/2448 , H01L39/2451 , H01P1/203 , Y02T50/67 , Y10S505/729 , Y10S505/783 , Y10S505/786
摘要： Methods and reactors are described for the production of thallium cuprate based high temperature superconductor films on a variety of substrates. The reactors provide for low volume cavities, means for rapidly heating and cooling to and from a predetermined elevated temperature and control of the thallium oxide overpressure during the processing. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.
摘要翻译： 描述了用于在各种基底上生产铜酸铜铊基高温超导体膜的方法和反应器。 这些反应器提供低体积的空腔，用于在预定的升高温度下快速加热和冷却的装置，以及在处理期间对氧化铊过压的控制。 获得均匀的高温超导膜，同时在加工过程中抑制衬底和超导膜之间的反应。
-
公开(公告)号：US5306699A
公开(公告)日：1994-04-26
申请号：US781358
申请日：1991-10-25
申请人： Michael M. Eddy
发明人： Michael M. Eddy
IPC分类号： C23C14/08 , C23C14/54 , C23C14/58 , C30B11/00 , C30B23/02 , C30B33/00 , H01L39/14 , H01L39/24 , H01P1/203 , C01F11/02
CPC分类号： C30B29/225 , C23C14/087 , C23C14/541 , C23C14/58 , C23C14/5806 , C23C14/5866 , C30B11/00 , C30B23/002 , C30B23/02 , C30B29/22 , C30B33/00 , H01L39/143 , H01L39/2422 , H01L39/2448 , H01L39/2451 , H01P1/203 , Y02T50/67 , Y10S505/729 , Y10S505/783 , Y10S505/786
摘要： Methods and reactors are described for the production of high temperature superconductor films on a variety of substrates, particularly those films which include volatile components during their manufacture. The reactors are particularly useful for producing films containing thallium. The reactors provide for relatively low volume cavities in which the substrate is disposed, and control of the thallium oxide overpressure during the processing. In a preferred embodiment, one or more holes or apertures are made in the reactor to permit thallium and thallium oxide to controllably leak from the reactor. For manufacture of double sided superconducting films, a reactor is used having top and bottom plates each with one or more holes in them. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.
摘要翻译： 描述了用于在各种基底上生产高温超导体膜的方法和反应器，特别是在制造过程中包括挥发性组分的那些膜。 反应器特别适用于生产含铊的薄膜。 反应器提供相对较小的体积的空腔，其中衬底被设置，并且在处理期间控制氧化铊过压。 在优选的实施方案中，在反应器中制备一个或多个孔或孔，以允许铊和氧化铊从反应器中可控地泄漏。 为了制造双面超导膜，使用具有顶板和底板的反应器，每个顶板和底板中都有一个或多个孔。 获得均匀的高温超导膜，同时在加工过程中抑制衬底和超导膜之间的反应。
-
公开(公告)号：US20100225423A1
公开(公告)日：2010-09-09
申请号：US12771791
申请日：2010-04-30
IPC分类号： H01P7/06
CPC分类号： H01Q1/246 , H01P1/2053 , H01P1/2084 , H01P7/10 , H01Q23/00 , H04B1/18
摘要： A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.
摘要翻译： 诸如塔式放大器（TMA），桅杆头放大器（MHA）或塔式升压器（TMB）的RF装置包括具有多个空腔和输入和输出的壳体，输入端耦合到天线 并且所述输出耦合到基站。 壳体包括保持多个同轴谐振器的传输路径。 壳体还包括多个接收路径，其包括具有多个空腔的至少一个路径，每个空腔包含介质谐振器。 最靠近天线输入的金属发射谐振器经由公共谐振线耦合到第一介质谐振器。 接收路径中的最后介质谐振器经由另一共用谐振线耦合到下游清理滤波器的第一金属谐振器。
-
6.发明授权
公开(公告)号：US5508255A
公开(公告)日：1996-04-16
申请号：US270960
申请日：1994-07-05
申请人： Michael M. Eddy
发明人： Michael M. Eddy
IPC分类号： C01G1/00 , C01G15/00 , C23C14/08 , C30B25/18 , C30B29/22 , H01B12/06 , H01L39/02 , H01L39/24
CPC分类号： H01L39/2461
摘要： The present invention comprises a high quality, epitaxial thallium-based HTS thin film on MgO and other substrates and methods of providing the same. The present invention is achieved using a nucleation layer which provides a template for subsequent growth. Specifically, YBCO and/or YBCO analog films (films having growth characteristics and physical structures analogous to YBCO) are used as nucleation layer(s) on MgO and other substrates to enable the growth of epitaxial thallium-based HTS films.
摘要翻译： 本发明包括在MgO和其它基材上的高品质外延铊基HTS薄膜及其提供方法。 本发明使用提供用于随后生长的模板的成核层来实现。 具体地说，YBCO和/或YBCO类似物膜（具有生长特性和类似于YBCO的物理结构的膜）用作MgO和其它基底上的成核层，以使外延铊基HTS膜生长。
-
7.发明授权Method for epitaxial lift-off for oxide films utilizing superconductor release layers 失效利用超导体剥离层的氧化膜的外延剥离方法
公开(公告)号：US5527766A
公开(公告)日：1996-06-18
申请号：US166011
申请日：1993-12-13
申请人： Michael M. Eddy
发明人： Michael M. Eddy
CPC分类号： C04B35/45 , C04B35/62218 , H01L39/2422 , G02F1/0027 , Y10S117/915
摘要： Novel structures and methods utilize layered copper oxide release materials to separate oxide films from growth substrates. Generally, the method comprises the steps of: first, forming a layered copper oxide sacrificial release material on a growth substrate, in the preferred embodiment being the high temperature superconductor YBCO grown on a compatible substrate such as LaAlO3, second, forming an oxide film on the layered copper oxide release material, in the preferred embodiment, a ferroelectric, an optical material or a oxide film compatible with further high temperature superconductor growth, such as SrTiO3 or CeO2, and third, etching the layered copper oxide release material so as to separate the oxide film from the growth substrate. Optionally, additional layers may be grown on the oxide film prior to etching. In the preferred embodiment, when high temperature superconducting devices are formed, the oxide films would be a material such as SrTiO3 or CeO2, upon which yet another high temperature superconducting film would be grown. After patterning and protecting the etched film, the structure may be etched. Generally, any of the layered copper oxide films, such as YBCO, TlCaBaCuO, LaSrCuOx and BiSrCaCuOx can be used. Oxide films having a substantially lower etch rate than the layered copper oxide materials incompatible with growth on the layered copper oxide materials may be utilized.
摘要翻译： 新型结构和方法利用层状氧化铜释放材料将氧化膜与生长衬底分离。 通常，该方法包括以下步骤：首先，在生长衬底上形成层状氧化铜牺牲剥离材料，在优选实施方案中为在兼容衬底（例如LaAlO 3）上生长的高温超导体YBCO，其次，在 在优选实施方案中，分层氧化铜释放材料是与另外的高温超导体生长相容的铁电体，光学材料或氧化膜，例如SrTiO 3或CeO 2，以及第三，蚀刻层状氧化铜释放材料以便分离 来自生长衬底的氧化膜。 任选地，可以在蚀刻之前在氧化物膜上生长另外的层。 在优选实施例中，当形成高温超导器件时，氧化物膜将是诸如SrTiO 3或CeO 2的材料，然后再生长另一高温超导膜。 在图案化和保护蚀刻膜之后，可以蚀刻该结构。 通常，可以使用任何分层的氧化铜膜，例如YBCO，TlCaBaCuO，LaSrCuOx和BiSrCaCuOx。 可以使用具有比层状氧化铜材料上的生长不相容的层状氧化铜材料的蚀刻速率显着更低的氧化物膜。
-
公开(公告)号：US5476836A
公开(公告)日：1995-12-19
申请号：US194711
申请日：1994-02-10
申请人： Michael M. Eddy
发明人： Michael M. Eddy
IPC分类号： C23C14/08 , C23C14/54 , C23C14/58 , C30B11/00 , C30B23/02 , C30B33/00 , H01L39/14 , H01L39/24 , H01P1/203 , H01B12/06
CPC分类号： C30B29/225 , C23C14/087 , C23C14/541 , C23C14/58 , C23C14/5806 , C23C14/5866 , C30B11/00 , C30B23/002 , C30B23/02 , C30B29/22 , C30B33/00 , H01L39/143 , H01L39/2422 , H01L39/2448 , H01L39/2451 , H01P1/203 , Y02T50/67 , Y10S505/729 , Y10S505/783 , Y10S505/786
摘要： Methods and reactors are described for the production of high temperature superconductor films on a variety of substrates, particularly those films which include volatile components during their manufacture. The reactors are particularly useful for producing films containing thallium. The reactors provide for relatively low volume cavities in which the substrate is disposed, and control of the thallium oxide overpressure during the processing. In a preferred embodiment, one or more holes or apertures are made in the reactor to permit thallium and thallium oxide to controllably leak from the reactor. For manufacture of double sided superconducting films, a reactor is used having top and bottom plates each with one or more holes in them. Uniform high temperature superconducting films are obtained while inhibiting reaction between the substrate and superconducting film during the processing.
摘要翻译： 描述了用于在各种基底上生产高温超导体膜的方法和反应器，特别是在制造过程中包括挥发性组分的那些膜。 反应器特别适用于生产含铊的薄膜。 反应器提供相对较小的体积的空腔，其中衬底被设置，并且在处理期间控制氧化铊过压。 在优选的实施方案中，在反应器中制备一个或多个孔或孔，以允许铊和氧化铊从反应器中可控地泄漏。 为了制造双面超导膜，使用具有顶板和底板的反应器，每个顶板和底板中都有一个或多个孔。 获得均匀的高温超导膜，同时在加工过程中抑制衬底和超导膜之间的反应。
-
公开(公告)号：US20110216754A1
公开(公告)日：2011-09-08
申请号：US12876961
申请日：2010-09-07
摘要： A Time-Delay Transmit Diversity (TDTD) RF device is described for use to enhance the transmit performance of wireless communications systems. Time delayed signals are added to diversity antennas to increase coverage and capacity of wireless base stations. Performance is improved by reducing the effects of multipath fading while taking advantage of the additive effects of Rake receivers used in mobiles.
摘要翻译： 时延发射分集（TDTD）RF器件被描述为用于增强无线通信系统的传输性能。 时分延迟信号被添加到分集天线以增加无线基站的覆盖和容量。 通过减少多路径衰落的影响，同时利用移动台中使用的耙式接收机的附加效应，可以提高性能。
-
公开(公告)号：US07983649B2
公开(公告)日：2011-07-19
申请号：US12771791
申请日：2010-04-30
IPC分类号： H04B1/16
CPC分类号： H01Q1/246 , H01P1/2053 , H01P1/2084 , H01P7/10 , H01Q23/00 , H04B1/18
摘要： A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.
摘要翻译： 诸如塔式放大器（TMA），桅杆头放大器（MHA）或塔式升压器（TMB）的RF装置包括具有多个空腔和输入和输出的壳体，输入端耦合到天线 并且所述输出耦合到基站。 壳体包括保持多个同轴谐振器的传输路径。 壳体还包括多个接收路径，其包括具有多个空腔的至少一个路径，每个空腔包含介质谐振器。 最靠近天线输入的金属发射谐振器经由公共谐振线耦合到第一介质谐振器。 接收路径中的最后介质谐振器经由另一共用谐振线耦合到下游清理滤波器的第一金属谐振器。
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.026 秒)
