公开(公告)号：US20080254621A1

公开(公告)日：2008-10-16

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： H01L21/44 ,  B05C11/11 ,  B05C13/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US08069813B2

公开(公告)日：2011-12-06

申请号：US11735984

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C3/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US08314027B2

公开(公告)日：2012-11-20

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30 ,  C25D1/00

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US20080254225A1

公开(公告)日：2008-10-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： B05D1/18 ,  B05C13/00

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US08844461B2

公开(公告)日：2014-09-30

申请号：US11735989

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28 ,  C23C18/16

CPC分类号： C23C18/1628 ,  Y10T137/87652

摘要： A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

摘要翻译： 化学流体处理系统被定义为向混合歧管的多个流体输入提供多个化学品。 化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。 每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。 混合歧管被定义为混合化学品的数量以形成化学镀溶液。 混合歧管包括连接到供应管线的流体输出。 供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

公开(公告)号：US20120045897A1

公开(公告)日：2012-02-23

申请号：US13284709

申请日：2011-10-28

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： H01L21/30

CPC分类号： H01L21/288 ,  C23C18/1619 ,  C23C18/1632 ,  H01L21/76873

摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

摘要翻译： 公开了一种用于晶片无电镀的干/干输出系统。 该系统包括用于晶片入口/出口和干燥操作的上部区域。 靠近头部设置在上部区域以执行干燥操作。 该系统还包括用于无电镀操作的下部区域。 下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。 系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。 系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。 系统是环境控制的。 此外，系统与环境受控的托管传输模块（MTM）接口。

公开(公告)号：US08485120B2

公开(公告)日：2013-07-16

申请号：US11735987

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie ,  Alan M. Schoepp

IPC分类号： B05C11/00 ,  B05D1/28

CPC分类号： H01L21/02104 ,  C23C18/1619 ,  H01L21/67005 ,  H01L21/6715

摘要： A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

摘要翻译： 半导体晶片化学镀设备包括压板和流体碗。 压板具有限定为支撑晶片的顶表面和从顶表面的周边向下延伸到压板的下表面的外表面。 流体碗具有由内表面限定的内部容积，以便在内部容积内容纳压板和要支撑在其上的晶片。 密封件设置在流体碗的内表面周围，以便当接合在流体碗的内表面和压板的外表面之间时形成液密屏障。 多个流体分配喷嘴被定位成在密封件上方的流体碗内分配电镀溶液，以便在压板上升起并流动，从而当存在于压板上时流过晶片。

公开(公告)号：US20080251148A1

公开(公告)日：2008-10-16

申请号：US11735989

申请日：2007-04-16

申请人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

发明人： William Thie ,  John M. Boyd ,  Fritz C. Redeker ,  Yezdi Dordi ,  John Parks ,  Tiruchirapalli Arunagiri ,  Aleksander Owczarz ,  Todd Balisky ,  Clint Thomas ,  Jacob Wylie

IPC分类号： B01F5/00

CPC分类号： C23C18/1628 ,  Y10T137/87652

摘要： A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

摘要翻译： 化学流体处理系统被定义为向混合歧管的多个流体输入提供多个化学品。 化学流体处理系统包括多个流体再循环回路，用于分别预处理和控制每个化学物质的供应。 每个流体循环回路被定义为对特定的一个化学成分进行脱气，加热和过滤。 混合歧管被定义为混合化学品的数量以形成化学镀溶液。 混合歧管包括连接到供应管线的流体输出。 供电线连接以将化学镀溶液供应到化学镀室内的流体碗。

公开(公告)号：US20110017605A1

公开(公告)日：2011-01-27

申请号：US12899220

申请日：2010-10-06

申请人： Carl A. Woods ,  Yezdi N. Dordi ,  Jacob Wylie ,  Robert Maraschin

发明人： Carl A. Woods ,  Yezdi N. Dordi ,  Jacob Wylie ,  Robert Maraschin

IPC分类号： C25D5/00

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  C25D21/08 ,  C25D21/12 ,  C25F3/12 ,  H01L21/67005 ,  H01L21/67219

摘要： Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.

摘要翻译： 本文定义电镀基板的方法。 一种方法包括提供在电镀液中具有电镀源的电镀组件和电镀液中的电镀促进剂，并且在电镀源和电镀促进剂之间限定电镀弯液面。 电镀弯液面被包含在电镀组件的路径中。 该方法还包括穿过基板穿过电镀组件的路径。 当基板的表面上存在电镀弯液面时，将基板充电，使得电镀离子被吸引到基板的表面，其中穿过电镀组件的路径的基板能够跨越基板的表面进行电镀。 并且，在形成电镀弯液面的路径中引起均匀的电荷，使得来自电镀源的电荷基本均匀地朝向电镀辅助器指向，因为充电的衬底移动通过电镀组件的路径。

公开(公告)号：US08221608B2

公开(公告)日：2012-07-17

申请号：US12899220

申请日：2010-10-06

申请人： Carl A. Woods ,  Yezdi N. Dordi ,  Jacob Wylie ,  Robert Maraschin

发明人： Carl A. Woods ,  Yezdi N. Dordi ,  Jacob Wylie ,  Robert Maraschin

IPC分类号： C25D5/02

CPC分类号： C25D17/00 ,  C25D17/001 ,  C25D17/002 ,  C25D21/08 ,  C25D21/12 ,  C25F3/12 ,  H01L21/67005 ,  H01L21/67219

摘要： Methods for plating substrates are herein defined. One method includes providing a plating assembly having a plating source in a plating fluid and a plating facilitator in the plating fluid, and defining a plating meniscus between the plating source and the plating facilitator. The plating meniscus being contained in a path of the plating assembly. The method further includes traversing a substrate through the path of the plating assembly. The substrate being charged so that plating ions are attracted to a surface of the substrate when the plating meniscus is present on the surface of the substrate, wherein the substrate traversing through the path of the plating assembly enables plating across the surface of the substrate. And, inducing a uniform charge in the path where the plating meniscus is formed, such that charge from the plating source is substantially uniformly directed toward the plating facilitator as the substrate that is charged moves through the path of the plating assembly.

摘要翻译： 本文定义电镀基板的方法。 一种方法包括提供在电镀液中具有电镀源的电镀组件和电镀液中的电镀促进剂，并且在电镀源和电镀促进剂之间限定电镀弯月面。 电镀弯液面被包含在电镀组件的路径中。 该方法还包括穿过基板穿过电镀组件的路径。 当基板的表面上存在电镀弯液面时，将基板充电，使得电镀离子被吸引到基板的表面，其中穿过电镀组件的路径的基板能够跨越基板的表面进行电镀。 并且，在形成电镀弯液面的路径中引起均匀的电荷，使得来自电镀源的电荷基本均匀地朝向电镀辅助器指向，因为充电的衬底移动通过电镀组件的路径。